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Keyword : leakage current

A Novel Body Bias Selection Scheme for Leakage Minimization Dong-Su LEE Sung-Chan KANG Young-Hyun JUN Bai-Sun KONG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/09/01 Vol. E94-C No. 9 pp. 1490-1493 Type of Manuscript: LETTER Category: Electronic Circuits Keyword: body bias, leakage current, subthreshold leakage, junction leakage, leakage monitoring,
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Electrical Properties of Ba_0.5Sr_0.5Ta₂O₆ Thin Film Fabricated by Sol-Gel Method Li LU Masahiro ECHIZEN Takashi NISHIDA Kiyoshi UCHIYAMA Yukiharu URAOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/10/01 Vol. E93-C No. 10 pp. 1511-1515 Type of Manuscript: Special Section PAPER (Special Section on Frontier of Thin-Film Transistor Technology) Category: Keyword: Ba_0.5Sr_0.5Ta₂O₆, gate oxide, dielectric constant, leakage current,
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A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation Kenichi AGAWA Shinichiro ISHIZUKA Hideaki MAJIMA Hiroyuki KOBAYASHI Masayuki KOIZUMI Takeshi NAGANO Makoto ARAI Yutaka SHIMIZU Asuka MAKI Go URAKAWA Tadashi TERADA Nobuyuki ITOH Mototsugu HAMADA Fumie FUJII Tadamasa KATO Sadayuki YOSHITOMI Nobuaki OTSUKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/06/01 Vol. E93-C No. 6 pp. 803-811 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: CMOS wireless transceiver, Bluetooth, sensitivity, temperature compensation, phase noise, VCO pulling, MOS switch, leakage current,
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New Low-Voltage Low-Latency Mixed-Voltage I/O Buffer Joung-Yeal KIM Su-Jin PARK Yong-Ki KIM Sang-Keun HAN Young-Hyun JUN Chilgee LEE Tae Hee HAN Bai-Sun KONG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 709-711 Type of Manuscript: LETTER Category: Integrated Electronics Keyword: mixed-voltage, I/O buffer, gate-oxide reliability, leakage current, hot-carrier degradation,
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Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40 nm DRAM Device Soo Han CHOI Young Hee PARK Chul Hong PARK Sang Hoon LEE Moon Hyun YOO Jun Dong CHO Gyu Tae KIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 658-661 Type of Manuscript: BRIEF PAPER Category: Memory Devices Keyword: edge effects, analytic model, retargeting, shaping gate channels, OPC, leakage current, drive current,
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Low-Leakage and Low-Power Implementation of High-Speed Logic Gates Tsung-Yi WU Liang-Ying LU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/04/01 Vol. E92-C No. 4 pp. 401-408 Type of Manuscript: Special Section PAPER (Special Section on Low-Leakage, Low-Voltage, Low-Power and High-Speed Technologies for System LSIs in Deep-Submicron Era) Category: Keyword: dual value logic, leakage current, pass-transistor logic gate, standard cell, transmission gate,
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Effect of a Guard-Ring on the Leakage Current in a Si-PIN X-Ray Detector for a Single Photon Counting Sensor Jin-Young KIM Jung-Ho SEO Hyun-Woo LIM Chang-Hyun BAN Kyu-Chae KIM Jin-Goo PARK Sung-Chae JEON Bong-Hoe KIM Seung-Oh JIN Young HU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 703-707 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: digital X-ray detection, leakage current, guard-ring, break-down voltage, single photon counting sensor,
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Temperature-Aware Configurable Cache to Reduce Energy in Embedded Systems Hamid NOORI Maziar GOUDARZI Koji INOUE Kazuaki MURAKAMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/04/01 Vol. E91-C No. 4 pp. 418-431 Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories) Category: Keyword: temperature-aware design, cache memory, leakage current, low energy, embedded systems,
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Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors Yanli PEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI Seiji INUMIYA Yasuo NARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 962-967 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: HfSiO_xN_y, metal gate, leakage current, charge trapping, TDDB,
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Low Dynamic Power and Low Leakage Power Techniques for CMOS Motion Estimation Circuits Nobuaki KOBAYASHI Tomomi EI Tadayoshi ENOMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/03/01 Vol. E89-C No. 3 pp. 271-279 Type of Manuscript: Special Section PAPER (Special Section on VLSI Design Technology in the Sub-100 nm Era) Category: Low Power Techniques Keyword: CMOS, dynamic power, stand-by power, leakage current, MPEG4, H.264, motion estimation,
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Low-Power Multiple-Valued Current-Mode Logic Using Substrate Bias Control Akira MOCHIZUKI Takahiro HANYU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/04/01 Vol. E87-C No. 4 pp. 582-588 Type of Manuscript: Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies) Category: Keyword: differential-pair circuit, substrate bias control, dynamic power dissipation, threshold voltage, low-power VLSI, leakage current,
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Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al₂O₃ Insulated Gate Shinya OOTOMO Hideki HASEGAWA Tamotsu HASHIZUME
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 2043-2050 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: GaN, AlGaN, leakage current, surface states, passivation,
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A 0.7-V 200-MHz Self-Calibration PLL Yoshiyuki SHIBAHARA Masaru KOKUBO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/08/01 Vol. E85-C No. 8 pp. 1577-1580 Type of Manuscript: Special Section PAPER (Special Issue on High-Performance Analog Integrated Circuits) Category: Keyword: PLL, VCO, calibration, leakage current, low voltage,
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Design and Demonstration of Pipelined Circuits Using SFQ Logic Akira AKAHORI Akito SEKIYA Takahiro YAMADA Akira FUJIMAKI Hisao HAYAKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/03/01 Vol. E85-C No. 3 pp. 641-644 Type of Manuscript: Special Section PAPER (Special Issue on Superconductive Electronics) Category: Digital Devices and Their Applications Keyword: SFQ, pipeline architecture, parameter spread, leakage current, parameter optimization method,
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Random Modulation: Multi-Threshold-Voltage Design Methodology in Sub-2-V Power Supply CMOS Naoki KATO Yohei AKITA Mitsuru HIRAKI Takeo YAMASHITA Teruhisa SHIMIZU Fuyuhiko MAKI Kazuo YANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/11/20 Vol. E83-C No. 11 pp. 1747-1754 Type of Manuscript: Special Section PAPER (Special Issue on Low-power LSIs and Technologies) Category: Keyword: CMOS, threshold voltage, leakage current, low power,
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New Poly-Si TFT with Selectively Doped Region in the Active Layer Min-Cheol LEE Jae-Hong JEON Juhn-Suk YOO Min-Koo HAN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/10/20 Vol. E83-C No. 10 pp. 1575-1578 Type of Manuscript: Special Section PAPER (Special Issue on Electronic Displays) Category: Keyword: poly-Si TFT, selectively doped region, leakage current, on-current,
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Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's Shigeru KAWANAKA Shinji ONGA Takako OKADA Michihiro OOSE Toshihiko IINUMA Tomoaki SHINO Takashi YAMADA Makoto YOSHIMI Shigeyoshi WATANABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/20 Vol. E82-C No. 7 pp. 1341-1346 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: SOI, LOCOS isolation, crystal defect, leakage current, stress,
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Device-Deviation Tolerant Elastic-Vt CMOS Circuits with Fine-Grain Power Control Capability Masayuki MIZUNO Hitoshi ABIKO Koichiro FURUTA Isami SAKAI Masakazu YAMASHINA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/09/20 Vol. E81-C No. 9 pp. 1463-1472 Type of Manuscript: Special Section PAPER (Special Issue on Novel VLSI Processor Architectures) Category: Keyword: low-threshold voltage, leakage current, supply-voltage fluctuation, supply-voltage control, low power dissipation,
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Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability Hitoshi SUMIDA Atsuo HIRABAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/20 Vol. E79-C No. 4 pp. 593-596 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: LIGBT, SOI, blocking capability, collector-short region, leakage current,
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Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs Satoshi KAMIYAMA Hiroshi SUZUKI Pierre-Yves LESAICHERRE Akihiko ISHITANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/20 Vol. E77-C No. 3 pp. 379-384 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Device Technology Keyword: tantalum oxide, rapid thermal nitridation (RTN), SiO₂ equivalent thickness, leakage current, time dependent dielectric breakdown (TDDB),
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Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation Satoshi MATSUDA Nobuyuki ITOH Chihiro YOSHINO Yoshiroh TSUBOI Yasuhiro KATSUMATA Hiroshi IWAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/20 Vol. E77-C No. 2 pp. 124-128 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Process Simulation Keyword: trench isolation, shallow trench, deep trench, high-speed bipolar LSIs, leakage current, mechanical stress,
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