Keyword : impact ionization

Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs
Kazuya NISHIHORI  Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/08/01
Vol. E90-C  No. 8  pp. 1643-1649
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
GaAs MESFET,  buried-p-type,  p-pocket-type,  I-V kink,  impact ionization,  hole accumulation, 
  Summary |  Full Text:PDF (367.3KB)
Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT
Yoshifumi KAWAKAMI  Naohiro KUZE  Jin-Ping AO  Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2039-2042
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN HEMT,  device simulation,  cut-off frequency,  drain breakdown voltage,  impact ionization, 
  Summary |  Full Text:PDF (503.5KB)
Highly Efficient Electron Emissions from Single-Crystalline CVD Diamond Surfaces
Toshimichi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/05/01
Vol. E86-C  No. 5  pp. 797-802
Type of Manuscript: Special Section PAPER (Special Issue on Field Electron Emission from Carbon Materials)
Category: 
Keyword: 
CVD diamond,  electron emission,  impact ionization,  high efficiency, 
  Summary |  Full Text:PDF (534KB)
Efficient Full-Band Monte Carlo Simulation of Silicon Devices
Christoph JUNGEMANN  Stefan KEITH  Martin BARTELS  Bernd MEINERZHAGEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/20
Vol. E82-C  No. 6  pp. 870-879
Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
silicon,  full-band Monte Carlo,  microscopic relaxation time,  velocity overshoot,  impact ionization,  drift-diffusion,  deep submicron NMOSFET, 
  Summary |  Full Text:PDF (770KB)
A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation
Morikazu TSUNO  Shin YOKOYAMA  Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/20
Vol. E81-C  No. 12  pp. 1913-1917
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFET,  low temperature,  velocity overshoot,  Sb,  nonsteady-stationary effect,  impact ionization,  hot-carrier, 
  Summary |  Full Text:PDF (493.8KB)
A non-Local Formulation of Impact Ionization for Silicon
Paul G. SCROBOHACI  Ting-wei TANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/20
Vol. E77-C  No. 2  pp. 134-138
Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
impact ionization,  high energy subpopulation,  self-consistent Monte-Carlo, 
  Summary |  Full Text:PDF (310.5KB)