Keyword : high-κ gate dielectric

Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
Takaaki KAWAHARA  Kazuyoshi TORII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 2-8
Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
CMOSFET,  high-κ gate dielectric,  HfO2,  atomic layer deposition,  long purge,  impurity,  gate leakage current, 
  Summary |  Full Text:PDF (1.1MB)
Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo MANABE  Kazuhiko ENDO  Satoshi KAMIYAMA  Toshiyuki IWAMOTO  Takashi OGURA  Nobuyuki IKARASHI  Toyoji YAMAMOTO  Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 30-36
Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectric,  aluminum oxide,  plasma nitridation,  fixed charge,  MOSFET performance, 
  Summary |  Full Text:PDF (952.9KB)