Keyword : high breakdown voltage

InGaP-Channel Field Effect Transistors with High Breakdown Voltage
Naoki HARA  Yasuhiro NAKASHA  Toshihide KIKKAWA  Kazukiyo JOSHIN  Yuu WATANABE  Hitoshi TANAKA  Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1294-1299
Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InGaP-channel FET,  high breakdown voltage,  high operating voltage,  low distortion, 
  Summary |  Full Text:PDF (604.9KB)
200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
Hitoshi YAMAGUCHI  Shigeyuki AKITA  Hiroaki HIMI  Kazunori KAWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/20
Vol. E83-C  No. 12  pp. 1961-1967
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high breakdown voltage,  CMOS transistor,  electric field relaxation,  SOI,  intrinsic layer, 
  Summary |  Full Text:PDF (2.5MB)
Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications
Yasuhiro OKAMOTO  Kohji MATSUNAGA  Mikio KANAMORI  Masaaki KUZUHARA  Yoichiro TAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/20
Vol. E80-C  No. 6  pp. 746-750
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction FET,  high breakdown voltage,  buried gate, 
  Summary |  Full Text:PDF (475.5KB)