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Keyword : heterojunction bipolar transistor

Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process Yutaro YAMAGUCHI Takeshi SAGAI Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 pp. 1323-1326 Type of Manuscript: BRIEF PAPER Category: III-V High-Speed Devices and Circuits Keyword: heterojunction bipolar transistor, InP, base-collector capacitance, transferred-substrate, heterogeneous integration,
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Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO₂ Wires Naoaki TAKEBE Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 917-920 Type of Manuscript: BRIEF PAPER Category: Keyword: heterojunction bipolar transistor, InP, base-collector capacitance, in situ etching,
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Fabrication of InP/InGaAs DHBTs with Buried SiO₂ Wires Naoaki TAKEBE Takashi KOBAYASHI Hiroyuki SUZUKI Yasuyuki MIYAMOTO Kazuhito FURUYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 830-834 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: heterojunction bipolar transistor, InP, MOCVD, CBr₄,
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Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 943-948 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: High-Speed HBTs and ICs Keyword: heterojunction bipolar transistor, reliability, rapid thermal annealing, GaAs, InGaP,
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High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation Kun-Ming CHEN Guo-Wei HUANG Li-Hsin CHANG Hua-Chou TSENG Tsun-Lai HSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/05/01 Vol. E87-C No. 5 pp. 720-725 Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits) Category: Active Devices and Circuits Keyword: high-frequency, SiGe, heterojunction bipolar transistor, pulsed measurement, self-heating effect,
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Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications Jong-In SONG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/01/20 Vol. E83-C No. 1 pp. 115-121 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: chemical beam epitaxy, carbon doping, heterojunction bipolar transistor, millimeter-wave transistor,
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Low-Noise, Low-Power Wireless Frontend MMICs Using SiGe HBTs Hermann SCHUMACHER Uwe ERBEN Wolfgang DURR Kai-Boris SCHAD
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/20 Vol. E82-C No. 11 pp. 1943-1950 Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Low Power-Consumption RF ICs Keyword: Silicon-Germanium, wireless, receivers, heterojunction bipolar transistor, microwave circuits, electronic noise,
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A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT Kazutomi MORI Kenichiro CHOUMEI Teruyuki SHIMURA Tadashi TAKAGI Yukio IKEDA Osami ISHIDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/20 Vol. E82-C No. 11 pp. 1913-1920 Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: RF Power Devices Keyword: microwave, amplifier, efficiency, layout, heterojunction bipolar transistor, multifinger,
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Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones Kazukiyo JOSHIN Yasuhiro NAKASHA Taisuke IWAI Takumi MIYASHITA Shiro OHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/05/20 Vol. E82-C No. 5 pp. 725-729 Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits) Category: Keyword: heterojunction bipolar transistor, intermodulation, harmonics, W-CDMA,
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AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems Nobuo NAGANO Masaaki SODA Hiroshi TEZUKA Tetsuyuki SUZAKI Kazuhiko HONJO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/20 Vol. E82-C No. 3 pp. 465-474 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Compound Semiconductor Devices Keyword: heterojunction bipolar transistor, optical transmission, preamplifier, optical modulator driver, clock extraction,
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AlGaAs/InGaAs HBT IC Modules for 40-Gb/s Optical Receiver Risato OHHIRA Yasushi AMAMIYA Takaki NIWA Nobuo NAGANO Takeshi TAKEUCHI Chiharu KURIOKA Tomohiro CHUZENJI Kiyoshi FUKUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/20 Vol. E82-C No. 3 pp. 448-455 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Compound Semiconductor Devices Keyword: heterojunction bipolar transistor, preamplifier, optical frontend, distributed amplifier, optical receiver,
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High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones Teruyuki SHIMURA Takeshi MIURA Yutaka UNEME Hirofumi NAKANO Ryo HATTORI Mutsuyuki OTSUBO Kazutomi MORI Akira INOUE Noriyuki TANINO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/20 Vol. E80-C No. 6 pp. 740-745 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: heterojunction bipolar transistor, digital cellular phone, individual thermal shunt, emitter air-bridge, bias mode,
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1616 Two-Dimensional Optoelectronic Integrated Receiver Array for Highly Parallel Interprocessor Networks Hiroshi YANO Sosaku SAWADA Kentaro DOGUCHI Takashi KATO Goro SASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/05/20 Vol. E80-C No. 5 pp. 689-694 Type of Manuscript: Special Section PAPER (Special Issue on Photonic Integrated Circuits) Category: Optoelectronic Integrated Receivers Keyword: optoelectronic integrated circuit, pin photodiode, heterojunction bipolar transistor, two-dimensional receiver array, optical switching, interprocessor network,
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High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation Shoji YAMAHATA Yutaka MATSUOKA Tadao ISHIBASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/20 Vol. E77-C No. 9 pp. 1437-1443 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques) Category: Keyword: heterojunction bipolar transistor, collector-up structure, carbon-doped base, oxygen-ion implantation, maximum oscillation frequency,
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Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology Takumi NITTONO Koichi NAGATA Yoshiki YAMAUCHI Takashi MAKIMURA Hiroshi ITO Osaake NAKAJIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/20 Vol. E77-C No. 9 pp. 1455-1463 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: heterojunction bipolar transistor, self-aligned structure, oxygen-ion implantation, zinc diffusion, carbon doping,
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IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs Yutaka MATSUOKA Shoji YAMAHATA Satoshi YAMAGUCHI Koichi MURATA Eiichi SANO Tadao ISHIBASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/09/20 Vol. E76-C No. 9 pp. 1392-1401 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices) Category: Keyword: heterojunction bipolar transistor, self-aligned structure, ballistic collection transistor, launcher, cutoff frequency, maximum oscillation frequency, multiplexer, preamplifier, selector, frequency divider,
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