Keyword : gate depletion

Improvement in Retention/Program Time Ratio of Direct Tunneling Memory (DTM) for Low Power SoC Applications
Kouji TSUNODA  Akira SATO  Hiroko TASHIRO  Toshiro NAKANISHI  Hitoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 608-613
Type of Manuscript: Special Section PAPER (Special Section on Low-Power LSI and Low-Power IP)
Category: Memory
Keyword: 
system-on-a-chip,  embedded RAM,  direct tunneling,  tunnel oxide,  gate depletion, 
  Summary |  Full Text:PDF (704.1KB)
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate
Hideki MURAKAMI  Yoshikazu MORIWAKI  Masafumi FUJITAKE  Daisuke AZUMA  Seiichiro HIGASHI  Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 646-650
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
SiGe gate,  gate depletion, 
  Summary |  Full Text:PDF (487.1KB)
Analysis of Boron Penetration and Gate Depletion Using Dual-Gate PMOSFETs for High Performance G-Bit DRAM Design
Norikatsu TAKAURA  Ryo NAGAI  Hisao ASAKURA  Satoru YAMADA  Shin'ichiro KIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1138-1145
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
boron penetration,  gate depletion,  dual-gate PMOSFETs,  Vth fluctuation,  G-bit DRAM, 
  Summary |  Full Text:PDF (1MB)