Keyword : ferroelectric


Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell VTH Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)
Teruyoshi HATANAKA Mitsue TAKAHASHI Shigeki SAKAI Ken TAKEUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Vol. E94-C  No. 4 ; pp. 539-547
Type of Manuscript:  Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: 
Keyword: 
NAND flash memoryferroelectricsolid-state driveSSD
 Summary | Full Text:PDF(1.4MB)

Polarization Fatigue Modeling of Ferroelectric Capacitors
Kiyoshi NISHIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/06/01
Vol. E85-C  No. 6 ; pp. 1334-1341
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
ferroelectricfatiguedegradationmodelNVRAM
 Summary | Full Text:PDF(445.4KB)

Overview and Trend of Chain FeRAM Architecture
Daisaburo TAKASHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 747-756
Type of Manuscript:  INVITED PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectricnonvolatilememoryFeRAMchain FeRAM
 Summary | Full Text:PDF(1.3MB)

A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors
Tetsuro TAMURA Yoshihiro ARIMOTO Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 785-790
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectricsimulation modelpolarization switchinghysteresis
 Summary | Full Text:PDF(426.4KB)

A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors
Nobuhito OGATA Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 777-784
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectricmemorytransistormodelsimulationC-V characteristic
 Summary | Full Text:PDF(731.9KB)

Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi2Ta2O9/Pt Capacitor
Young Min KANG Seaung Suk LEE Beelyong YANG Choong Heui CHUNG Hun Woo KYE Suk Kyoung HONG Nam Soo KANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 757-762
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectricnonvolatilememoryFeRAMimprintreliability
 Summary | Full Text:PDF(480.4KB)

A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model
Marc ULLMANN Holger GOEBEL Heinz HOENIGSCHMID Thomas HANEDER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1324-1330
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Circuit Applications
Keyword: 
ferroelectricFEMFETMFISmodelingsimulation
 Summary | Full Text:PDF(960.2KB)

Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 577-583
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectricMFSFETSrBi2Ta2O9Si non-volatile memorymemory
 Summary | Full Text:PDF(576.5KB)

Study of Ferroelectric Materials for Ferroelectric Memory FET
Yoshikazu FUJIMORI Naoki IZUMI Takashi NAKAMURA Akira KAMISAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 572-576
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectricthin filmMFMISlow dielectric constantsol-gelstrontium niobatestrontium tantalate niobatehysteresis
 Summary | Full Text:PDF(450.2KB)

Formation of Reliable Pb(Ti, Zr)O3 Thin-Film Capacitors for Read/Write Endurance of Ferroelectric Non-volatile Memories
Katsuhiro AOKI Yukio FUKUDA Ken NUMATA Akitoshi NISHIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 537-544
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
PZTfatigueferroelectricthin-film capacitoriridiumsol-gel
 Summary | Full Text:PDF(780.2KB)

Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O3 Thin Film Capacitors with IrO2 Top Electrode
Yoshihisa FUJISAKI Keiko KUSHIDA-ABDELGHAFAR Hiroshi MIKI Yasuhiro SHIMAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 518-522
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
PZTIrO2ferroelectrichydrogencatalysis
 Summary | Full Text:PDF(497.1KB)

Ferroelectric Nonvolatile Memory Technology
Tatsumi SUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6 ; pp. 812-818
Type of Manuscript:  INVITED PAPER (Special Issue on ULSI Memory Technology)
Category: Nonvolatile memories
Keyword: 
ferroelectricnonvolatilememorymaterialcellarchitecture,Y1,256 kbit FeRAM
 Summary | Full Text:PDF(520.8KB)

(Ba0.75Sr0.25)TiO3 Films for 256 Mbit DRAM
Tsuyoshi HORIKAWA Noboru MIKAMI Hiromi ITO Yoshikazu OHNO Tetsuro MAKITA Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 385-391
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
(Ba,Sr)TiO3ferroelectricDRAMsputteringgrain size effect
 Summary | Full Text:PDF(701KB)