Keyword : electromigration

Wire Planning for Electromigration and Interference Avoidance in Analog Circuits
Hsin-Hsiung HUANG  Jui-Hung HUNG  Cheng-Chiang LIN  Tsai-Ming HSIEH 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2011/11/01
Vol. E94-A  No. 11  pp. 2402-2411
Type of Manuscript: PAPER
Category: VLSI Design Technology and CAD
Keyword: 
analog circuits,  wire planning with obstacles,  electromigration,  interference,  integer linear programming, 
  Summary |  Full Text:PDF (1.3MB)
An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration
Hajdin CERIC  Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 421-426
Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
electromigration,  diffuse interface model,  grid adaptation,  void evolution,  finite element method, 
  Summary |  Full Text:PDF (699.2KB)
Electromigration and Diffusion of Gold in GaAs IC Interconnections
Akira OHTA  Kotaro YAJIMA  Norio HIGASHISAKA  Tetsuya HEIMA  Takayuki HISAKA  Ryo HATTORI  Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11  pp. 1932-1939
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
electromigration,  diffusion,  GaAs IC,  high temperature,  high current density, 
  Summary |  Full Text:PDF (2MB)
Via Electromigration Characteristics in Aluminum Based Multilevel Interconnection
Takahisa YAMAHA  Masaru NAITO  Tadahiko HOTTA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/01/20
Vol. E77-A  No. 1  pp. 187-194
Type of Manuscript: Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
Keyword: 
reliability,  electromigration,  metallization,  via contact,  multilevel interconnection,  laminated interconnections,  aluminum, 
  Summary |  Full Text:PDF (896.2KB)
Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects
Takahisa NITTA  Tadahiro OHMI  Tsukasa HOSHI  Toshiyuki TAKEWAKI  Tadashi SHIBATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/20
Vol. E76-C  No. 4  pp. 626-634
Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
copper interconnects,  giant-grain,  electromigration,  low-kinetic-energy ion bombardment process, 
  Summary |  Full Text:PDF (794.6KB)