Keyword : direct tunneling


Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu MURAGUCHI Yukihiro TAKADA Shintaro NOMURA Tetsuo ENDOH Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 563-568
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
direct tunnelingtwo-dimensional electron gaselectron dynamicsquantum dotelectron transport
 Summary | Full Text:PDF(3.3MB)

Improvement in Retention/Program Time Ratio of Direct Tunneling Memory (DTM) for Low Power SoC Applications
Kouji TSUNODA Akira SATO Hiroko TASHIRO Toshiro NAKANISHI Hitoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 608-613
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power LSI and Low-Power IP)
Category: Memory
Keyword: 
system-on-a-chipembedded RAMdirect tunnelingtunnel oxidegate depletion
 Summary | Full Text:PDF(704.3KB)

On Density-Gradient Modeling of Tunneling through Insulators
Timm HOHR Andreas SCHENK Andreas WETTSTEIN Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 379-384
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationdensity-gradient modeldirect tunnelinggate leakageresonant tunneling
 Summary | Full Text:PDF(509.7KB)

Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver
Andreas WETTSTEIN Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1189-1193
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
stacked dielectricsdirect tunnelingSchrodinger equation
 Summary | Full Text:PDF(675.8KB)

Ramp-Edge Josephson Junctions Using Barriers of Various Resistivities
Masahiro HORIBE Koh-ichi KAWAI Akira FUJIMAKI Hisao HAYAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/10/25
Vol. E81-C  No. 10 ; pp. 1526-1531
Type of Manuscript:  INVITED PAPER (Special Issue on Low- and High-Temperature Superconductive Electron Devices and Their Applications)
Category: High-Tc Junction Technology
Keyword: 
ramp-edge Josephson junctionGa dopingCa dopingdirect tunnelingresonant tunneling
 Summary | Full Text:PDF(604.9KB)