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Keyword : device model

Intra-Gate Length Biasing for Leakage Optimization in 45 nm Technology Node Yesung KANG Youngmin KIM
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2013/05/01 Vol. E96-A No. 5 pp. 947-952 Type of Manuscript: PAPER Category: VLSI Design Technology and CAD Keyword: design for manufacturing (DFM), leakage saving, non-rectangular transistor, device model, TCAD, gate biasing,
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Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100 GHz Ryuichi FUJIMOTO Kyoya TAKANO Mizuki MOTOYOSHI Uroschanit YODPRASIT Minoru FUJISHIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/04/01 Vol. E94-C No. 4 pp. 589-597 Type of Manuscript: Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration) Category: Keyword: millimeter wave, device model, MOSFET, transmission line, pad, bond-based design,
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High-Frequency Device-Modeling Techniques for RF-CMOS Circuits Ryuichi FUJIMOTO Osamu WATANABE Fumie FUJII Hideyuki KAWAKITA Hiroshi TANIMOTO
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2001/02/01 Vol. E84-A No. 2 pp. 520-528 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era) Category: Keyword: device model, model parameter, scaling, geometric parameter, process parameter,
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