Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C
No. 4
pp. 564-571
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category:
Keyword:
6T/8T-SRAM,
asymmetric pass gate transistor,
local electron injection,
disturb/write margin,
read speed,
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