Keyword : SiGe


Phonon-Drag Contribution to Seebeck Coefficient in P-Type Si, Ge and Si1-xGex
Veerappan MANIMUTHU Muthusamy OMPRAKASH Mukannan ARIVANANDHAN Faiz SALLEH Yasuhiro HAYAKAWA Hiroya IKEDA 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 482-485
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
SiGethermoelectricsSeebeck coefficientphonon drag
 Summary | Full Text:PDF(236.9KB)

High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
Jungwoo OH Jeff HUANG Injo OK Se-Hoon LEE Paul D. KIRSCH Raj JAMMY Hi-Deok LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 712-716
Type of Manuscript:  INVITED PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
high transportSiGeorientationstrainheterostructure
 Summary | Full Text:PDF(1.4MB)

A 2 to 5 GHz-Band Self Frequency Dividing Quadrature Mixer Using Current Re-Use Configuration
Eiji TANIGUCHI Mitsuhiro SHIMOZAWA Noriharu SUEMATSU 
Publication:   IEICE TRANSACTIONS on Communications
Publication Date: 2009/12/01
Vol. E92-B  No. 12 ; pp. 3711-3716
Type of Manuscript:  Special Section PAPER (Special Section on Dynamic Spectrum Access)
Category: Wideband RF Systems
Keyword: 
SiSiGeMMICRFICmixerconverterdirect conversion receivercognitive radio
 Summary | Full Text:PDF(635.7KB)

Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
A-Ram CHOI Sang-Sik CHOI Byung-Guan PARK Dongwoo SUH Gyungock KIM Jin-Tae KIM Jin-Soo CHOI Deok-Ho CHO Tae-Hyun HAN Kyu-Hwan SHIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 767-771
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SiGeSEGaspect ratioRPCVD
 Summary | Full Text:PDF(1.1MB)

Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel
Sang-Sik CHOI A-Ram CHOI Jae-Yeon KIM Jeon-Wook YANG Yong-Woo HWANG Tae-Hyun HAN Deok Ho CHO Kyu-Hwan SHIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 716-720
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SiGeMOSFETPD SOIstress effect
 Summary | Full Text:PDF(706.8KB)

A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs
Satoshi KURACHI Toshihiko YOSHIMASU Haiwen LIU Nobuyuki ITOH Koji YONEMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/06/01
Vol. E90-C  No. 6 ; pp. 1228-1233
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
SiGeVCOresonant circuitVCO gain5-GHz-bandWLAN
 Summary | Full Text:PDF(888.9KB)

Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates
Mathieu STOFFEL Jing ZHANG Oliver G. SCHMIDT 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 921-925
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
SiGeinterband tunneling diodesnegative differential resistanceSiGe relaxed buffers
 Summary | Full Text:PDF(422.7KB)

A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology
Tzung-Han WU Chinchun MENG Tse-Hung WU Guo-Wei HUANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C  No. 6 ; pp. 1267-1270
Type of Manuscript:  Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: RF
Keyword: 
SiGeHBTGilbert mixer
 Summary | Full Text:PDF(377.3KB)

Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications
Takashi YAMAZAKI Shun-ichiro OHMI Shinya MORITA Hiroyuki OHRI Junichi MUROTA Masao SAKURABA Hiroo OMI Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 656-661
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
silicon on insulator (SOI) waferpatterned SOISiGeselective etchingMOSFET
 Summary | Full Text:PDF(1.3MB)

High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation
Kun-Ming CHEN Guo-Wei HUANG Li-Hsin CHANG Hua-Chou TSENG Tsun-Lai HSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5 ; pp. 720-725
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
high-frequencySiGeheterojunction bipolar transistorpulsed measurementself-heating effect
 Summary | Full Text:PDF(1.2MB)

The Maximum Operating Region in SiGe HBTs for RF Power Amplifiers
Akira INOUE Shigenori NAKATSUKA Takahide ISHIKAWA Yoshio MATSUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5 ; pp. 714-719
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
maximum operating regionmeasurementwaveformSiGepower amplifierHBT
 Summary | Full Text:PDF(726.3KB)

Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium
Jimpei TABATA Kouichi HIRANAKA Tohru SAITOH Takeshi NAGASHIMA Masanori HANGYO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1994-1999
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
terahertzSiGeconductivityspectroscopy
 Summary | Full Text:PDF(1.1MB)

A 38% Tuning Range 6-GHz Fully Integrated VCO
Nobuyuki ITOH Shin-ichiro ISHIZUKA Kazuhiro KATOH Yutaka SHIMIZU Koji YONEMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/08/01
Vol. E85-C  No. 8 ; pp. 1604-1606
Type of Manuscript:  Special Section LETTER (Special Issue on High-Performance Analog Integrated Circuits)
Category: 
Keyword: 
fully integrated VCOSiGe6 GHzhigh tuning range
 Summary | Full Text:PDF(396.6KB)

1200-MHz Fully Integrated VCO with "Turbo-Charger" Technique
Nobuyuki ITOH Shin-ichiro ISHIZUKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/08/01
Vol. E85-C  No. 8 ; pp. 1569-1576
Type of Manuscript:  Special Section PAPER (Special Issue on High-Performance Analog Integrated Circuits)
Category: 
Keyword: 
fully integrated VCOSiGeBiCMOSphase noise
 Summary | Full Text:PDF(1.2MB)

A 2 GHz-Band Even Harmonic Type SiGe-MMIC Direct Conversion CECCTP Mixer
Eiji TANIGUCHI Kenichi MAEDA Chiemi SAWAUMI Noriharu SUEMATSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7 ; pp. 1412-1418
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
microwavemixerheterojunction bipolar transistor (HBT)SiGe
 Summary | Full Text:PDF(549.1KB)

Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit
Shintaro SHINJO Kazutomi MORI Hiroyuki JOBA Noriharu SUEMATSU Tadashi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7 ; pp. 1404-1411
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
microwavepower amplifierheterojunction bipolar transistor (HBT)SiGebias circuit
 Summary | Full Text:PDF(1.3MB)

SiGe-HBTs for Bipolar and BICMOS-Applications: From Research to Ramp up of Production
Konrad WOLF Wolfgang KLEIN Norbert ELBEL Adrian BERTHOLD Sonja GRONDAHL Thomas HUTTNER Stefan DREXL Rudolf LACHNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1399-1407
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
SiGeselective epitaxybipolarBICMOS
 Summary | Full Text:PDF(1.5MB)

Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures
Tomohisa MIZUNO Naoharu SUGIYAMA Atsushi KUROBE Shin-ichi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1423-1430
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
strained-SiSOISiGeSIMOXmobility
 Summary | Full Text:PDF(739.6KB)

SiGe Hetero-FETs Potential for Micropower Applications
Christos PAPAVASSILIOU Kristel FOBELETS Chris TOUMAZOU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1414-1422
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
SiGeHFETHMOSmicropowersubthreshold
 Summary | Full Text:PDF(644.7KB)

MMIC Power Amplifier Applications of Heterojunction Bipolar Transistors (HBTs)
Pei-Der TSENG Liyang ZHANG Mau-Chung Frank CHANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1408-1413
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
SiGeGaAsHBTpower amplifierMMIC
 Summary | Full Text:PDF(1.2MB)

Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics
Shin-ichi TAKAGI Tomohisa MIZUNO Naoharu SUGIYAMA Tsutomu TEZUKA Atsushi KUROBE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C  No. 8 ; pp. 1043-1050
Type of Manuscript:  INVITED PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
CMOSSOImobilitystrainSiGe
 Summary | Full Text:PDF(1.6MB)