Keyword : SiGe HBT

L-Band SiGe HBT Frequency-Tunable Dual-Bandpass or Dual-Bandstop Differential Amplifiers Using Varactor-Loaded Series and Parallel LC Resonators
Kazuyoshi SAKAMOTO  Yasushi ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/12/01
Vol. E95-C  No. 12  pp. 1839-1845
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
amplifier,  differential,  microwave,  frequency-tunable,  SiGe HBT,  varactor,  LC-resonator,  dual-band, 
  Summary |  Full Text:PDF
An L-Band 4-Bit RL/RC-Switched Active Phase Shifter Using Differential Switches
Kenji NAKAMURA  Yasushi ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/09/01
Vol. E92-C  No. 9  pp. 1170-1175
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications)
Category: 
Keyword: 
phase shifter,  differential,  microwave,  switch,  SiGe HBT, 
  Summary |  Full Text:PDF
A High-Q Active Inductor Circuit for Quasi-Millimeter-Wave Frequency Range
Toru MASUDA  Yukio HATTORI  Hiroki SHIKAMA  Akira HYOGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/06/01
Vol. E91-C  No. 6  pp. 862-870
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
active inductor,  operational transconductor amplifier,  SiGe HBT, 
  Summary |  Full Text:PDF  | Errata[Uploaded on July 1,2008]
High Efficiency Open Collector Adaptive Bias SiGe HBT Differential Power Amplifier
Kuei-Cheng LIN  Tsung-Yu YANG  Kuan-Yu CHEN  Hwann-Kaeo CHIOU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/11/01
Vol. E89-C  No. 11  pp. 1704-1707
Type of Manuscript: LETTER
Category: Microwaves, Millimeter-Waves
Keyword: 
open collector linearizer,  SiGe HBT,  adaptive bias amplifier,  W-CDMA, 
  Summary |  Full Text:PDF
Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance
Masao KONDO  Isao MIYASHITA  Tadashi KURAMAOTO  Makoto KOSHIMIZU  Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C  No. 4  pp. 455-465
Type of Manuscript: Special Section PAPER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: 
Keyword: 
bipolar transistor,  SiGe HBT,  SiGe:C,  power amplifier,  ACPR,  PAE, 
  Summary |  Full Text:PDF
Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector
Toshinobu MATSUNO  Atsuhiko KANDA  Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2022-2026
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
SiGe HBT,  power amplifier,  selectively ion implanted collector,  collector break down voltage, 
  Summary |  Full Text:PDF
DC and AC Performances in Selectively Grown SiGe-Base HBTs
Katsuya ODA  Eiji OHUE  Masamichi TANABE  Hiromi SHIMAMOTO  Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 2013-2020
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
SiGe HBT,  UHV/CVD,  selective epitaxial growth,  Ge profile,  current gain,  cutoff frequency, 
  Summary |  Full Text:PDF
Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy
Shuji ITO  Toshiyuki NAKAMURA  Hiroshi HOGA  Satoshi NISHIKAWA  Hirokazu FUJIMAKI  Yumiko HIJIKATA  Yoshihisa OKITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/20
Vol. E82-C  No. 3  pp. 526-530
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
bipolar transistor,  SiGe HBT,  doping level inversion,  cutoff frequency,  selective epitaxy, 
  Summary |  Full Text:PDF
A High-Speed 6-Bit ADC Using SiGe HBT
Haruo KOBAYASHI  Toshiya MIZUTA  Kenji UCHIDA  Hiroyuki MATSUURA  Akira MIURA  Tsuyoshi YAKIHARA  Sadaharu OKA  Daisuke MURATA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1998/03/20
Vol. E81-A  No. 3  pp. 389-397
Type of Manuscript: Special Section PAPER (Special Section of Selected Papers from the 10th Karuizawa Workshop on Circuits and Systems)
Category: 
Keyword: 
A/D converter,  folding/interpolation,  analog circuit,  SiGe HBT,  modeling, 
  Summary |  Full Text:PDF