Keyword : STT-MRAM


A New Read Scheme for High-Density Emerging Memories
Takashi OHSAWA 
Publication:   
Publication Date: 2018/06/01
Vol. E101-C  No. 6 ; pp. 423-429
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
ReRAMSTT-MRAMPCRAMmemristorreference celldummy cellredundancybit yieldweighted average
 Summary | Full Text:PDF(1.1MB)

STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier
Yohei UMEKI Koji YANAGIDA Shusuke YOSHIMOTO Shintaro IZUMI Masahiko YOSHIMOTO Hiroshi KAWAGUCHI Koji TSUNODA Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2014/12/01
Vol. E97-A  No. 12 ; pp. 2411-2417
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Design
Keyword: 
STT-MRAMlow-voltageprocess-variation-tolerant
 Summary | Full Text:PDF(3.7MB)

Design Methodologies for STT-MRAM (Spin-Torque Transfer Magnetic Random Access Memory) Sensing Circuits
Jisu KIM Jee-Hwan SONG Seung-Hyuk KANG Sei-Seung YOON Seong-Ook JUNG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/06/01
Vol. E93-C  No. 6 ; pp. 912-921
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
STT-MRAMsensing circuitsensing marginload-line analysisread disturbance
 Summary | Full Text:PDF(7.9MB)