IEICE SEARCH SYSTEM

Keyword : SOI

High-Frequency Precise Characterization of Intrinsic FinFET Channel Hideo SAKAI Shinichi O'UCHI Takashi MATSUKAWA Kazuhiko ENDO Yongxun LIU Junichi TSUKADA Yuki ISHIKAWA Tadashi NAKAGAWA Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA Hiroki ISHIKURO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 pp. 752-760 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: FinFET, SOI, De-embedding, RF, device modeling,
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A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch Koichi MAEZAWA Ikuo SOGA Shigeru KISHIMOTO Takashi MIZUTANI Kazuhiro AKAMATSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 1025-1030 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Novel Integration Technology Keyword: heterogeneous integration, fluidic self-assembly, HEMT, SPDT switch, SOI,
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Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In₂O₃ Nano-Particles Embedded in Polyimide Insulator Dong Uk LEE Seon Pil KIM Tae Hee LEE Eun Kyu KIM Hyun-Mo KOO Won-Ju CHO Young-Ho KIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 747-750 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: In₂O₃, memory, SOI, nano-particles, nonvolatile,
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A PVT Tolerant STM-16 Clock-and-Data Recovery LSI Using an On-Chip Loop-Gain Variation Compensation Architecture in 0.20-µm CMOS/SOI Yusuke OHTOMO Hiroshi KOIZUMI Kazuyoshi NISHIMURA Masafumi NOGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/04/01 Vol. E91-C No. 4 pp. 655-661 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: LSI, CDR, CMOS, SOI, jitter,
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Recent Progresses of Si-Based Photonics in Chinese Main Land Jinzhong YU Qiming WANG Buwen CHENG Saowu CHEN Yuhua ZUO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/02/01 Vol. E91-C No. 2 pp. 150-155 Type of Manuscript: Special Section PAPER (Special Section on Silicon Photonics Technologies and Their Applications) Category: INVITED Keyword: nanocrystals, PL, quantum dot, SOI, optical switch matrix, photodiodes,
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A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels Shun-ichiro OHMI Tetsushi SAKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 994-999 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: twin-channel, self-align, SOI, Ω-gate, SiN, wet etching,
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A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI Fukashi MORISHITA Hideyuki NODA Isamu HAYASHI Takayuki GYOHTEN Mako OKAMOTO Takashi IPPOSHI Shigeto MAEGAWA Katsumi DOSAKA Kazutami ARIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 pp. 765-771 Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Memory Keyword: SOI, capacitorless, DRAM, low power, data retention,
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Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations Toshiro HIRAMOTO Toshiharu NAGUMO Tetsu OHTOU Kouki YOKOYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 pp. 836-841 Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: INVITED Keyword: SOI, body factor, body effect, FinFET, multigate MOSFET,
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A 1-V 2.4-GHz Downconverter for FSK Wireless Applications with a Complex BPF and a Frequency Doubler in CMOS/SOI Mamoru UGAJIN Junichi KODATE Tsuneo TSUKAHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/06/01 Vol. E87-C No. 6 pp. 888-894 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies) Category: Keyword: RF, FSK downconverter, CMOS, SOI, complex BPF, frequency doubler,
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A Low-Power Microcontroller with Body-Tied SOI Technology Hisakazu SATO Yasuhiro NUNOMURA Niichi ITOH Koji NII Kanako YOSHIDA Hironobu ITO Jingo NAKANISHI Hidehiro TAKATA Yasunobu NAKASE Hiroshi MAKINO Akira YAMADA Takahiko ARAKAWA Toru SHIMIZU Yuichi HIRANO Takashi IPPOSHI Shuhei IWADE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/04/01 Vol. E87-C No. 4 pp. 563-570 Type of Manuscript: Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies) Category: Keyword: low power, high speed, microcontroller, SOI,
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Photonic-Band-Gap Waveguides and Resonators in SOI Photonic Crystal Slabs Masaya NOTOMI Akihiko SHINYA Eiichi KURAMOCHI Satoshi MITSUGI Han-Youl RYU Tatsuro KAWABATA Tai TSUCHIZAWA Toshifumi WATANABE Tetsufumi SHOJI Koji YAMADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/03/01 Vol. E87-C No. 3 pp. 398-408 Type of Manuscript: Special Section PAPER (Special Section on Photonic Crystals and Their Device Applications) Category: Keyword: photonic crystal, photonic band gap, waveguide, resonator, SOI,
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Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers Junichi KODATE Mamoru UGAJIN Tsuneo TSUKAHARA Takakuni DOUSEKI Nobuhiko SATO Takehito OKABE Kazuaki OHMI Takao YONEHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/06/01 Vol. E86-C No. 6 pp. 1041-1049 Type of Manuscript: Special Section PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems) Category: Keyword: RFIC, CMOS, LNA, silicon-on-insulator, SOI,
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A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI Mamoru UGAJIN Kenji SUZUKI Tsuneo TSUKAHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/08/01 Vol. E85-C No. 8 pp. 1588-1595 Type of Manuscript: Special Section PAPER (Special Issue on High-Performance Analog Integrated Circuits) Category: Keyword: voltage reference, CMOS, low voltage, SOI,
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A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance Mitsuo NAKAMURA Hideki SHIMA Toshimasa MATSUOKA Kenji TANIGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/07/01 Vol. E85-C No. 7 pp. 1428-1435 Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies) Category: Keyword: voltage controlled oscillator, wireless communication, CMOS, SOI, double-tuning,
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Subband Structure Engineering for Realizing Scaled CMOS with High Performance and Low Power Consumption Shin-ichi TAKAGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/05/01 Vol. E85-C No. 5 pp. 1064-1072 Type of Manuscript: INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices) Category: Keyword: inversion layer, mobility, subband, strained-Si, SOI,
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Low Loss Ultra-Small Branches in a Silicon Photonic Wire Waveguide Atsushi SAKAI Tatsuhiko FUKAZAWA Toshihiko BABA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/04/01 Vol. E85-C No. 4 pp. 1033-1038 Type of Manuscript: Special Section PAPER (Special Issue on Recent Progress of Integrated Photonic Devices) Category: New Devices Keyword: integrated optics, optical waveguide, branch circuit, SOI, FDTD,
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A 1-V 2-GHz RF Receiver with 49 dB of Image Rejection in CMOS/SIMOX Mamoru UGAJIN Junichi KODATE Tsuneo TSUKAHARA
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2002/02/01 Vol. E85-A No. 2 pp. 293-299 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics) Category: Keyword: image rejection, CMOS, low voltage, SOI, RF,
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Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application Yasuo YAMAGUCHI Takashi IPPOSHI Kimio UEDA Koichiro MASHIKO Shigeto MAEGAWA Masahide INUISHI Tadashi NISHIMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/12/01 Vol. E84-C No. 12 pp. 1735-1745 Type of Manuscript: Special Section PAPER (Special Issue on Integrated Systems with New Concepts) Category: Keyword: SOI, SOC, partially depleted, isolation,
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Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures Tomohisa MIZUNO Naoharu SUGIYAMA Atsushi KUROBE Shin-ichi TAKAGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1423-1430 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: SiGe HBTs & FETs Keyword: strained-Si, SOI, SiGe, SIMOX, mobility,
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Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics Shin-ichi TAKAGI Tomohisa MIZUNO Naoharu SUGIYAMA Tsutomu TEZUKA Atsushi KUROBE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/08/01 Vol. E84-C No. 8 pp. 1043-1050 Type of Manuscript: INVITED PAPER (Special Issue on Silicon Nanodevices) Category: Keyword: CMOS, SOI, mobility, strain, SiGe,
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Dynamic Floating Body Control SOI CMOS for Power Managed Multimedia ULSIs Fukashi MORISHITA Kazutami ARIMOTO Kazuyasu FUJISHIMA Hideyuki OZAKI Tsutomu YOSHIHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/02/01 Vol. E84-C No. 2 pp. 253-259 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: SOI, floating body, body control, high speed, low power,
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200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate Hitoshi YAMAGUCHI Shigeyuki AKITA Hiroaki HIMI Kazunori KAWAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/12/20 Vol. E83-C No. 12 pp. 1961-1967 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: high breakdown voltage, CMOS transistor, electric field relaxation, SOI, intrinsic layer,
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Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias Toshiro HIRAMOTO Makoto TAKAMIYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/02/20 Vol. E83-C No. 2 pp. 161-169 Type of Manuscript: INVITED PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies) Category: Keyword: MOSFET, low power, low voltage, variable threshold voltage, back-bias, body effect, DTMOS, SOI,
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A CAD-Compatible SOI-CMOS Gate Array Using 0.35µm Partially-Depleted Transistors Kimio UEDA Koji NII Yoshiki WADA Shigenobu MAEDA Toshiaki IWAMATSU Yasuo YAMAGUCHI Takashi IPPOSHI Shigeto MAEGAWA Koichiro MASHIKO Yasutaka HORIBA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/02/20 Vol. E83-C No. 2 pp. 205-211 Type of Manuscript: Special Section PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies) Category: Keyword: SOI, CMOS, field-shield isolation, gate array, low-power, high-speed,
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Energy-Reduction Effect of Ultralow-Voltage MTCMOS/SIMOX Circuits Using a Graph with Equispeed and Equienergy Lines Takakuni DOUSEKI Toshishige SHIMAMURA Koji FUJII Junzo YAMADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/02/20 Vol. E83-C No. 2 pp. 212-219 Type of Manuscript: Special Section PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies) Category: Keyword: ultralow-voltage circuit, multi-threshold CMOS, SIMOX, SOI,
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Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's Shigeru KAWANAKA Shinji ONGA Takako OKADA Michihiro OOSE Toshihiko IINUMA Tomoaki SHINO Takashi YAMADA Makoto YOSHIMI Shigeyoshi WATANABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/20 Vol. E82-C No. 7 pp. 1341-1346 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: SOI, LOCOS isolation, crystal defect, leakage current, stress,
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New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure Yoichi TAMAKI Takashi HASHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/04/20 Vol. E82-C No. 4 pp. 612-617 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Keyword: isolation capacitance, SOI, bipolar transistor, trench structure,
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Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology Mitsuru HARADA Tsuneo TSUKAHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/20 Vol. E82-C No. 3 pp. 553-558 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Silicon Devices Keyword: CMOS, SOI, RF, LNA,
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High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage Tetsu TANAKA Youichi MOMIYAMA Toshihiro SUGII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/20 Vol. E82-C No. 3 pp. 538-543 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Silicon Devices Keyword: SOI, DTMOS, F_t, F_max, low power,
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Temperature Characteristics of Lateral Power MOS FET Formed by Solid Phase Epitaxy Masahito KODAMA Tsutomu UESUGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/09/20 Vol. E81-C No. 9 pp. 1505-1507 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: power MOS FET, LATERAL, SPE, SOI, temperature characteristic,
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A 40-Gb/s 88 ATM Switch LSI Using 0. 25-µmCMOS/SIMOX Yusuke OHTOMO Sadayuki YASUDA Masafumi NOGAWA Jun-ichi INOUE Kimihiro YAMAKOSHI Hirotoshi SAWADA Masayuki INO Shigeki HINO Yasuhiro SATO Yuichiro TAKEI Takumi WATANABE Ken TAKEYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/05/20 Vol. E81-C No. 5 pp. 737-745 Type of Manuscript: Special Section PAPER (Special Issue on Multimedia, Network, and DRAM LSIs) Category: Network Keyword: SOI, CMOS, ATM, high-speed,
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Low-Power and High-Speed LSIs Using 0.25-µm CMOS/SIMOX Masayuki INO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/12/20 Vol. E80-C No. 12 pp. 1532-1538 Type of Manuscript: INVITED PAPER (Special Issue on Low-Power and High-Speed LSI Technologies) Category: Keyword: CMOS, SOI, SIMOX, gate array, ATM switch,
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Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs Risho KOH Tohru MOGAMI Haruo KATO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/07/20 Vol. E80-C No. 7 pp. 893-898 Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs) Category: Novel Structure Devices Keyword: SOI, MOSFET, floating body effect, simulation, applicable voltage,
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An Ultra Low Voltage SOI CMOS Pass-Gate Logic Tsuneaki FUSE Yukihito OOWAKI Mamoru TERAUCHI Shigeyoshi WATANABE Makoto YOSHIMI Kazunori OHUCHI Jun'ichi MATSUNAGA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 472-477 Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Keyword: SOI, 0.5 V operation, ultra low voltage, pass-gate logic, body-bias control,
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Features of Ultimately Miniaturized MOSFETs/SOI: A New Stage in Device Physics and Design Concepts Yasuhisa OMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 394-406 Type of Manuscript: INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Device and Process Technologies Keyword: SOI, SIMOX, MOSFET, down-scaling, ultra-thin,
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An Advanced Shallow SIMOX/CMOS Technology for High Performance Portable Systems Alberto O. ADAN Toshio NAKA Seiji KANEKO Daizo URABE Kenichi HIGASHI Yasumori FUKUSHIMA Soshu TAKAMATSU Shogo HIDESHIMA Atsushi KAGISAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 407-416 Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Keyword: SOI, SIMOX, CMOS, low-power, high-speed,
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Analysis of Self-Heating in SOI High Voltage MOS Transistor Hitoshi YAMAGUCHI Hiroaki HIMI Shigeyuki AKITA Toshiyuki MORISHITA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 423-430 Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Keyword: SOI, high voltage, self-heating, temperature-rise, electrothermal simulation,
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Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer Satoshi MATSUMOTO Toshiaki YACHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 431-435 Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Keyword: SOI, power MOSFET, parasitic bipolar effect, emission microscopy,
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The Potential of Ultrathin-Film SOI Devices for Low-Power and High-Speed Applications Yuichi KADO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 443-454 Type of Manuscript: INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Circuit Technologies and Applications Keyword: CMOS, SOI, SIMOX, low voltage, low power,
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A Fully Depleted CMOS/SIMOX LSI Scheme Using a LVTTL-Compatible and Over-2, 000-V ESD-Hardness I/O Circuit for Reduction in Active and Static Power Consumption Yusuke OHTOMO Takeshi MIZUSAWA Kazuyoshi NISHIMURA Hirotoshi SAWADA Masayuki INO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 455-463 Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Keyword: CMOS, SOI, low voltage, LVTTL-compatible, ESD,
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Analysis of the Delay Distributions of 0.5 µm SOI LSIs Toshiaki IWAMATSU Takashi IPPOSHI Yasuo YAMAGUCHI Kimio UEDA Koichiro MASHIKO Shigeto MAEGAWA Yasuo INOUE Tadashi HIRAO Tdashi NISHIMURA Akihiko YASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 464-471 Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Keyword: SOI, SIMOX, divider, adder, high-speed, low voltage,
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SMART-CUT(R): The Basic Fabrication Process for UNIBOND(R) SOI Wafers A.J. AUBERTON-HERVE Michel BRUEL Bernard ASPAR Christophe MALEVILLE Hubert MORICEAU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 358-363 Type of Manuscript: INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Wafer Technologies Keyword: SOI, UNIBOND(R), Smart-Cut(R), wafer bonding,
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High-Quality Low-Dose SIMOX Wafers Sadao NAKASHIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 364-369 Type of Manuscript: INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Wafer Technologies Keyword: SOI, SIMOX, annealing, oxidation, Si,
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Physical Modeling Needed for Reliable SOI Circuit Design Jerry G. FOSSUM Srinath KRISHNAN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/20 Vol. E80-C No. 3 pp. 388-393 Type of Manuscript: INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Device and Process Technologies Keyword: SOI, compact models, circuit simulation, floating-body,
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Integration of a Power Supply for System-on-Chip Satoshi MATSUMOTO Masato MINO Toshiaki YACHI
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 1997/02/20 Vol. E80-A No. 2 pp. 276-282 Type of Manuscript: INVITED PAPER (Special Section on Analog Circuit Techniques for System-on-Chip Integration) Category: Keyword: power supply, system on chip, power IC, SOI, thin-film magnetic device,
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A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit Yusuke OHTOMO Masafumi NOGAWA Masayuki INO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/20 Vol. E79-C No. 4 pp. 524-529 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: CMOS, interface, high-speed, active-pull-up, SOI,
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Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability Hitoshi SUMIDA Atsuo HIRABAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/20 Vol. E79-C No. 4 pp. 593-596 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: LIGBT, SOI, blocking capability, collector-short region, leakage current,
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Modeling of Leak Current Characteristics in High Frequency Operation of CMOS Circuits Fabricated on SOI Substrate Hiroshi ITO Kunihiro ASADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/02/20 Vol. E79-C No. 2 pp. 185-191 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: SOI & Material Characterization Keyword: leak current, threshold voltage shift, SOI, CMOS, inverter chain,
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Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS Seiji FUJINO Kazuhiro TSURUTA Akiyoshi ASAI Tadashi HATTORI Yoshihiro HAMAKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/12/20 Vol. E78-C No. 12 pp. 1773-1778 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: SOI, threshold voltage, wafer direct bonding, floating back gate, electric charge injection, ring oscillator,
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Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics Shoichi MASUI Tatsuo NAKAJIMA Keisuke KAWAMURA Takayuki YANO Isao HAMAGUCHI Masaharu TACHIMORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/20 Vol. E78-C No. 9 pp. 1263-1272 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: SOI, fixed oxide charge, interface trap, parasitic capacitance, subthreshold slope,
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Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect Yasuo YAMAGUCHI Jun TAKAHASHI Takehisa YAMAGUCHI Tomohisa WADA Toshiaki IWAMATSU Hans-Oliver JOACHIM Yasuo INOUE Tadashi NISHIMURA Natsuro TSUBOUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/07/20 Vol. E78-C No. 7 pp. 812-817 Type of Manuscript: Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age) Category: Keyword: SOI, SIMOX, SRAM, low-voltage operation, back-gate bias effect,
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High-Speed and Low-Power n⁺-p⁺ Double-Gate SOI CMOS Kunihiro SUZUKI Tetsu TANAKA Yoshiharu TOSAKA Hiroshi HORIE Toshihiro SUGII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/04/20 Vol. E78-C No. 4 pp. 360-367 Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits) Category: Device Technology Keyword: MOSFET, SOI, double-gate, high-speed, low-power, threshold voltage,
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The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film Hitoshi SUMIDA Atsuo HIRABAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/20 Vol. E77-C No. 9 pp. 1464-1471 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: SOI, lateral IGBT, substrate bias, blocking capability, switching characteristics,
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Ultimate Lower Bound of Power for MOS Integrated Circuits and Their Applications Kunihiro ASADA Mike LEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/07/20 Vol. E77-C No. 7 pp. 1131-1137 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: SOI, deep submicron, charging and discharging energy, recycled energy, TDGC model, transient device simulation, finite element method, future MOS LSI,
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Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding Takao ABE Yasuyuki NAKAZATO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/20 Vol. E77-C No. 3 pp. 342-349 Type of Manuscript: INVITED PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Keyword: SOI, Si on quartz, SOS, wafer bonding, dislocation-free, silicon layer,
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A New Proposal for Inverter Delay Improvement on CMOS/SOI Future Technology M.O. LEE Kunihiro ASADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/10/20 Vol. E76-C No. 10 pp. 1515-1522 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: TPD time-dependent gate capacitance(TDGC), SOI, deep sub-micrometer, CMOS, poly-si gate thickness(t_m), ring oscillator,
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Process and Device Technologies of CMOS Devices for Low-Voltage Operation Masakazu KAKUMU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/05/20 Vol. E76-C No. 5 pp. 672-680 Type of Manuscript: INVITED PAPER (Special Section on Low-Power and Low-Voltage Integrated Circuits) Category: Keyword: CMOS, SOI, SIMOX, MOSFET, low-voltage, low-temperature, threshold voltage high-speed, power-supply voltage, subthreshold current, circuit performance, power dissipation,
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An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4-µm Gate Ultrathin-Film SIMOX Technology Yuichi KADO Masao SUZUKI Keiichi KOIKE Yasuhisa OMURA Katsutoshi IZUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/04/20 Vol. E76-C No. 4 pp. 562-571 Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies) Category: Device Technology Keyword: integrated electronics, semiconductor materials and devices, CMOS, SOI, SIMOX, phase locked loop,
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Bonded SOI with Polish-Stopper Technology for ULSI Yoshihiro MIYAZAWA Makoto HASHIMOTO Naoki NAGASHIMA Hiroshi SATO Muneharu SHIMANOE Katsunori SENO Fumio MIYAJI Takeshi MATSUSHITA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/20 Vol. E75-C No. 12 pp. 1522-1528 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: SOI LSIs Keyword: SOI, wafer bonding, polish-stopper, 256 kb SRAM 4 Mb SRAM cell,
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Investigation on High-Speed Performance of 0.1-µm-Gate, Ultrathin-Film CMOS/SIMOX Yasuhisa OMURA Sadao NAKASHIMA Katsutoshi IZUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/20 Vol. E75-C No. 12 pp. 1491-1497 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: Deep Sub-micron SOI CMOS Keyword: CMOS, SOI, SIMOX, ultrathin, high speed,
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Analytical Modeling of Dynamic Performance of Deep Sub-micron SOI/SIMOX Based on Current-Delay Product Minoru FUJISHIMA Makoto IKEDA Kunihiro ASADA Yasuhisa OMURA Katsutoshi IZUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/20 Vol. E75-C No. 12 pp. 1506-1514 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: Deep Sub-micron SOI CMOS Keyword: CMOS, SOI, deep-submicron, modeling, ring oscillator,
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Mixed-Signal IC (MSIC) for New SOI-Based Structure Takeshi MATSUTANI Toshiharu TAKARAMOTO Takao MIURA Syuichi HARAJIRI Tsunenori YAMAUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/20 Vol. E75-C No. 12 pp. 1515-1521 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: SOI LSIs Keyword: MSIC, SOI, rectifier, delta-sigma A/D converter,
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Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs Kazuya MATSUZAWA Minoru TAKAHASHI Makoto YOSHIMI Naoyuki SHIGYO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/20 Vol. E75-C No. 12 pp. 1477-1483 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: Hot Carrier Keyword: SOI, energy transport, velocity overshoot, hot carrier,
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Bevel Style High Voltage Power Transistor for Power IC Kazuhiro TSURUTA Mitsutaka KATADA Seiji FUJINO Tadashi HATTORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/20 Vol. E75-C No. 12 pp. 1459-1464 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: SOI Devices Keyword: power transistor, wafer direct bonding, beveled structure, high voltage, SOI,
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Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO₂ Interface Nobuo SASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/20 Vol. E75-C No. 12 pp. 1430-1437 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: SOI Wafers Keyword: laser-recrystallization, SOI, interface-charge,
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SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen Sadao NAKASHIMA Katsutoshi IZUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/20 Vol. E75-C No. 12 pp. 1415-1420 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: SOI Wafers Keyword: SIMOX, implantation, dislocation, oxygen, SOI,
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ULSI Technology Trends toward 256K/1G DRAMs Masahiro KASHIWAGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/11/20 Vol. E75-C No. 11 pp. 1304-1312 Type of Manuscript: INVITED PAPER (Special Issue on LSI Memories) Category: Keyword: ULSI, DRAM, technology trend, SOI, vertical processing,
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Contactless Evaluation Using a Laser/Microwave Method for the Silicon-on-Insulator Made by Wafer Bonding Akira USAMI Takahisa NAKAI Hideki FUJIWARA Shun-ichiro ISHIGAMI Takao WADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/20 Vol. E75-C No. 9 pp. 1043-1048 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: SOI, wafer bonding, void, laser/microwave method, lifetime,
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