Keyword : SOI MOSFET

Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs
Toshiki SAITO  Takuya SARAYA  Takashi INUKAI  Hideaki MAJIMA  Toshiharu NAGUMO  Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1073-1078
Type of Manuscript: Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
SOI MOSFET,  triangular wire,  short channel effect,  subthreshold factor,  DIBL, 
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Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects
Rimon IKENO  Hiroshi ITO  Kunihiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/20
Vol. E80-C  No. 6  pp. 806-811
Type of Manuscript: PAPER
Category: Electronic Circuits
Keyword: 
SOI MOSFET,  device simulation,  subthreshold characteristics,  quantum mechanical effects,  parameter fitting,  substrate bias, 
  Summary |  Full Text:PDF