Keyword : PHEMT


An Approach to Ultra-Broadband Medium-Power MMIC Cascode-Pair Distributed Amplifier Design
Qun WU Yu-Ming WU Jia-Hui FU Bo-Shi JIN Jong-Chul LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/07/01
Vol. E88-C  No. 7 ; pp. 1353-1357
Type of Manuscript:  INVITED PAPER (Special Section on Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Applications)
Category: 
Keyword: 
distributed amplifierpower amplifierPHEMTcascode
 Summary | Full Text:PDF(441.8KB)

A Power Amplifier Model Considering Drain Current Dependence upon Input Power for High Efficiency Transmitter Power Amplifiers in Mobile Communications
Fumitaka IIZUKA Tsuyoshi OGINO Hiroshi SUZUKI Kazuhiko FUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5 ; pp. 762-771
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
efficient power amplifiersdrain current dependenceauto-biasPHEMTmobile communications
 Summary | Full Text:PDF(510KB)

An L-Band High Efficiency and Low Distortion Multi-Stage Amplifier Using Self Phase Distortion Compensation Technique
Yukio IKEDA Kazutomi MORI Shintaro SHINJO Fumimasa KITABAYASHI Akira OHTA Tadashi TAKAGI Osami ISHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12 ; pp. 1967-1972
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
microwaveamplifiertransistorPHEMTdistortionefficiency
 Summary | Full Text:PDF(1.1MB)

Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer
Yong-Gui XIE Seiya KASAI Hiroshi TAKAHASHI Chao JIANG Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1335-1343
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
insulated gatePHEMTInGaAsinterface controlFermi level pinning
 Summary | Full Text:PDF(793.9KB)