Keyword : PHEMT

An Approach to Ultra-Broadband Medium-Power MMIC Cascode-Pair Distributed Amplifier Design
Qun WU  Yu-Ming WU  Jia-Hui FU  Bo-Shi JIN  Jong-Chul LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/07/01
Vol. E88-C  No. 7  pp. 1353-1357
Type of Manuscript: Special Section PAPER (Special Section on Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Applications)
Category: INVITED
Keyword: 
distributed amplifier,  power amplifier,  PHEMT,  cascode, 
  Summary |  Full Text:PDF
A Power Amplifier Model Considering Drain Current Dependence upon Input Power for High Efficiency Transmitter Power Amplifiers in Mobile Communications
Fumitaka IIZUKA  Tsuyoshi OGINO  Hiroshi SUZUKI  Kazuhiko FUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5  pp. 762-771
Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
efficient power amplifiers,  drain current dependence,  auto-bias,  PHEMT,  mobile communications, 
  Summary |  Full Text:PDF
An L-Band High Efficiency and Low Distortion Multi-Stage Amplifier Using Self Phase Distortion Compensation Technique
Yukio IKEDA  Kazutomi MORI  Shintaro SHINJO  Fumimasa KITABAYASHI  Akira OHTA  Tadashi TAKAGI  Osami ISHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 1967-1972
Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
microwave,  amplifier,  transistor,  PHEMT,  distortion,  efficiency, 
  Summary |  Full Text:PDF
Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer
Yong-Gui XIE  Seiya KASAI  Hiroshi TAKAHASHI  Chao JIANG  Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1335-1343
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
insulated gate,  PHEMT,  InGaAs,  interface control,  Fermi level pinning, 
  Summary |  Full Text:PDF