Keyword : NDR

Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor
Tetsuya UEMURA  Toshio BABA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7  pp. 1486-1490
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
multiple-valued logic,  T-gate,  flip flop,  tunnel transistor,  NDR, 
  Summary |  Full Text:PDF (391.4KB)
GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations
Egor ALEKSEEV  Dimitris PAVLIDIS  William Earl SUTTON  Edwin PINER  Joan REDWING 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1462-1469
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
GaN,  THz,  Gunn,  NDR, 
  Summary |  Full Text:PDF (1.3MB)