Keyword : MOSFET


Study on Threshold Voltage Variation Evaluated by Charge-Based Capacitance Measurement
Katsuhiro TSUJI Kazuo TERADA Ryo TAKEDA Hisato FUJISAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/04/01
Vol. E99-C  No. 4 ; pp. 466-473
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETC-V curveCBCMthreshold voltageflat-band voltagevariation
 Summary | Full Text:PDF(2.1MB)

Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel
Naoki HARADA Shintaro SATO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/03/01
Vol. E98-C  No. 3 ; pp. 283-286
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETtransition metal dichalcogenideshort-channel effectsdevice simulationhigh-k dielectric
 Summary | Full Text:PDF(272.3KB)

Development of Test Structure for Variability Evaluation using Charge-Based Capacitance Measurement
Katsuhiro TSUJI Kazuo TERADA Ryota KIKUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/11/01
Vol. E97-C  No. 11 ; pp. 1117-1123
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETC-V curveCBCMvariability
 Summary | Full Text:PDF(1.8MB)

Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance
Masayuki YAMADA Ken UCHIDA Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5 ; pp. 419-422
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
InGaAsMOSFETdynamic source resistancedelay component
 Summary | Full Text:PDF(355.4KB)

Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress
Toshiro HIRAMOTO Anil KUMAR Takuya SARAYA Shinji MIYANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Vol. E96-C  No. 6 ; pp. 759-765
Type of Manuscript:  INVITED PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
transistorMOSFETvariabilityoff-state stress
 Summary | Full Text:PDF(3.5MB)

Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs
Jae-Hyung JANG Hyuk-Min KWON Ho-Young KWAK Sung-Kyu KWON Seon-Man HWANG Jong-Kwan SHIN Seung-Yong SUNG Yi-Sun CHUNG Da-Soon LEE Hi-Deok LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 624-629
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
fluorineflicker noise1/f noisereliabilityhot-carrierNBTIMOSFET
 Summary | Full Text:PDF(2.3MB)

NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
Nurul Ezaila ALIAS Anil KUMAR Takuya SARAYA Shinji MIYANO Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 620-623
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
Negative Bias Temperature Instability (NBTI)variabilitySRAMtransistorMOSFET
 Summary | Full Text:PDF(1.1MB)

Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
Atsushi KATO Toru KANAZAWA Shunsuke IKEDA Yoshiharu YONAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 904-909
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
back-sourceMOSFETInGaAsBCBbonding
 Summary | Full Text:PDF(1.8MB)

A New Approach to Modeling the Impact of EMI on MOSFET DC Behavior
Raul FERNANDEZ-GARCIA Ignacio GIL Alexandre BOYER Sonia BENDHIA Bertrand VRIGNON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/12/01
Vol. E94-C  No. 12 ; pp. 1906-1908
Type of Manuscript:  BRIEF PAPER
Category: Electronic Circuits
Keyword: 
MOSFETelectromagnetic compatibility (EMC)electrical modellingdirect power injection
 Summary | Full Text:PDF(356.4KB)

Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs
Zunchao LI Jinpeng XU Linlin LIU Feng LIANG Kuizhi MEI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/06/01
Vol. E94-C  No. 6 ; pp. 1120-1126
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETsurrounding-gatedual-materialhalo
 Summary | Full Text:PDF(558KB)

Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process
Takuya IMAMOTO Takeshi SASAKI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 724-729
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
1/f noiseflicker noiseMOSFETSiON/Poly-Si GateRandom Telegraph Signal (RTS)
 Summary | Full Text:PDF(2.3MB)

Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100 GHz
Ryuichi FUJIMOTO Kyoya TAKANO Mizuki MOTOYOSHI Uroschanit YODPRASIT Minoru FUJISHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Vol. E94-C  No. 4 ; pp. 589-597
Type of Manuscript:  Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: 
Keyword: 
millimeter wavedevice modelMOSFETtransmission linepadbond-based design
 Summary | Full Text:PDF(2MB)

Analyzing the On-State Power Dissipation in Stepped-Output Diode-Clamped Multi-Level Inverter
Ehsan ESFANDIARI Norman Bin MARIUN Mohammad Hamiruce MARHABAN Azmi ZAKARIA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/12/01
Vol. E93-C  No. 12 ; pp. 1670-1678
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
diode-clampedmulti-level inverteron-stateMOSFETpower dissipation
 Summary | Full Text:PDF(1.2MB)

A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors
Kianoush SOURI Hossein SHAMSI Mehrshad KAZEMI Kamran SOURI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/12/01
Vol. E93-C  No. 12 ; pp. 1708-1712
Type of Manuscript:  BRIEF PAPER
Category: Electronic Circuits
Keyword: 
bandgapreference voltageweak inversionMOSFET
 Summary | Full Text:PDF(639.2KB)

Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo ENDOH Koji SAKUI Yukio YASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 557-562
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFET3D structured deviceMOSFETLSI
 Summary | Full Text:PDF(7.8MB)

Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure
Tetsuo ENDOH Koji SAKUI Yukio YASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 534-539
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Multi-Gate Technology
Keyword: 
FinFEThalo I/IMOSFETthreshold voltage roll-offS-factor
 Summary | Full Text:PDF(3.6MB)

Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate MOSFETs
Zunchao LI Ruizhi ZHANG Feng LIANG Zhiyong YANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/04/01
Vol. E92-C  No. 4 ; pp. 558-563
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETsurrounding-gatecompact modelhalo
 Summary | Full Text:PDF(416.3KB)

Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel
Sang-Sik CHOI A-Ram CHOI Jae-Yeon KIM Jeon-Wook YANG Yong-Woo HWANG Tae-Hyun HAN Deok Ho CHO Kyu-Hwan SHIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 716-720
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SiGeMOSFETPD SOIstress effect
 Summary | Full Text:PDF(706.8KB)

FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
Hochul LEE Youngchang YOON Ickhyun SONG Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 776-779
Type of Manuscript:  Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
random telegraph signal noiseFN stressflash memoryMOSFET
 Summary | Full Text:PDF(662.3KB)

Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits
Yuzo FURUKAWA Hiroo YONEZU Akihiro WAKAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C  No. 2 ; pp. 145-149
Type of Manuscript:  INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: 
Keyword: 
SiIII-V-N alloyslight emitting diodeMOSFETmonolithic-integration
 Summary | Full Text:PDF(934.6KB)

Gate-Extension Overlap Control by Sb Tilt Implantation
Kentaro SHIBAHARA Nobuhide MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 973-977
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword: 
MOSFETextensiongateoverlaptilt implantationSb
 Summary | Full Text:PDF(533KB)

Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors
Wancheng ZHANG Katsuhiko NISHIGUCHI Yukinori ONO Akira FUJIWARA Hiroshi YAMAGUCHI Hiroshi INOKAWA Yasuo TAKAHASHI Nan-Jian WU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 943-948
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
single-electronMOSFETturnstilesingle-electron detection
 Summary | Full Text:PDF(789.8KB)

Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition
Yoshioki ISOBE Kiyohito HARA Dondee NAVARRO Youichi TAKEDA Tatsuya EZAKI Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 885-894
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETshot noisehigh frequency noisedevice simulationsub-threshold current
 Summary | Full Text:PDF(712.4KB)

Accurate Small-Signal Modeling of FD-SOI MOSFETs
Guechol KIM Yoshiyuki SHIMIZU Bunsei MURAKAMI Masaru GOTO Keisuke UEDA Takao KIHARA Toshimasa MATSUOKA Kenji TANIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C  No. 4 ; pp. 517-519
Type of Manuscript:  Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: 
Keyword: 
FD-SOIMOSFETRFmodelingnon-quasi-static
 Summary | Full Text:PDF(237.8KB)

On the Computational Synthesis of CMOS Voltage Followers
Esteban TLELO-CUAUTLE Delia TORRES-MUÑOZ Leticia TORRES-PAPAQUI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2005/12/01
Vol. E88-A  No. 12 ; pp. 3479-3484
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Synthesis
Keyword: 
CADanalog synthesisvoltage followernullatornoratorbiasing and sizingMOSFET
 Summary | Full Text:PDF(325.2KB)

The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS
Ehsanollah FATHI Ashkan BEHNAM Pouya HASHEMI Behzad ESFANDYARPOUR Morteza FATHIPOUR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C  No. 6 ; pp. 1122-1126
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: Device
Keyword: 
MOSFETdual metal gatestacked gateDIBLshort channel effects
 Summary | Full Text:PDF(659.5KB)

A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission
Toshihiro MATSUDA Hiroaki TAKEUCHI Akira MURAMATSU Hideyuki IWATA Takashi OHZONE Kyoji YAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 811-816
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFETphotoemissionhot carriergate length
 Summary | Full Text:PDF(1.1MB)

Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs
Takeo MATSUKI Kazuyoshi TORII Takeshi MAEDA Yasushi AKASAKA Kiyoshi HAYASHI Naoki KASAI Tsunetoshi ARIKADO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 804-810
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFEThigh-kmetal-gategate-last
 Summary | Full Text:PDF(857KB)

RFCV Test Structure Design for a Selected Frequency Range
Wutthinan JEAMSAKSIRI Abdelkarim MERCHA Javier RAMOS Stefaan DECOUTERE Florence CUBAYNES 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 817-823
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
capacitanceCVgate dielectricimpedanceMOSFETnitrideoxideRFS-parameters
 Summary | Full Text:PDF(881.3KB)

Characterization and Modeling of Gate-Induced-Drain-Leakage
Fabien GILIBERT Denis RIDEAU Alexandre DRAY Francois AGUT Michel MINONDO Andre JUGE Pascal MASSON Rachid BOUCHAKOUR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 829-837
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
GIDLcompact modelMOSFETelectric fieldtrap assisted tunneling
 Summary | Full Text:PDF(1.6MB)

Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications
Takashi YAMAZAKI Shun-ichiro OHMI Shinya MORITA Hiroyuki OHRI Junichi MUROTA Masao SAKURABA Hiroo OMI Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 656-661
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
silicon on insulator (SOI) waferpatterned SOISiGeselective etchingMOSFET
 Summary | Full Text:PDF(1.3MB)

Equivalent Saturated MOSFET Circuit with Wide Input Range
Takahide SATO Shigetaka TAKAGI Nobuo FUJII 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2005/02/01
Vol. E88-A  No. 2 ; pp. 431-437
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
MOSFETsaturation regionequivalent MOSFET circuit
 Summary | Full Text:PDF(434.6KB)

Gate-to-Bulk Overlap Capacitance Extraction and Its Circuit Verification
Masanori SHIMASUE Yasuo KAWAHARA Takeshi SANO Hitoshi AOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 929-932
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
CGBOmodelingextractionMOSFETsimulation
 Summary | Full Text:PDF(664.2KB)

Compact CMOS Modelling for Advanced Analogue and RF Applications
Dirk B.M. KLAASSEN Ronald van LANGEVELDE Andries J. SCHOLTEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 854-866
Type of Manuscript:  INVITED PAPER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
compact modellingcompact modelsMOSFETRF performanceanalogue applicationsRF applicationsR2R circuitvariable transconductance circuit
 Summary | Full Text:PDF(1.4MB)

Mobility Reduction Cancellation Technique for OTA Using MOSFETs Operated in Triode and Saturation Regions
Hayato FUJII Akira HYOGO Keitaro SEKINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 990-995
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
MOSFETOTAmobility reductiontriode regionsaturation region
 Summary | Full Text:PDF(989KB)

A 380-MHz CMOS Linear-in-dB Variable Gain Amplifier with Gain Compensation Techniques for CDMA Systems
Osamu WATANABE Mitsuyuki ASHIDA Tetsuro ITAKURA Shoji OTAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6 ; pp. 1069-1076
Type of Manuscript:  Special Section PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category: 
Keyword: 
variable gain amplifierVGAgain compensationtemperature compensationlinear-in-dB characteristicssquare circuitMOSFETsquare-law regionexponential-law regionCDMA
 Summary | Full Text:PDF(587.4KB)

Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs--Effects of Substrate Impurity
Yoshinari KAMAKURA Hironori RYOUKE Kenji TANIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 357-362
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
Monte Carlo simulationmolecular dynamicsmobilityscreeningMOSFET
 Summary | Full Text:PDF(1.4MB)

A Study of a Stable Driving Circuit for Arbitrary-Shaped Electroluminescent Elements
Yasuyuki KITADA Noboru MASUDA Hiroshi NAKANE Sadao YAMAZAKI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2003/02/01
Vol. E86-A  No. 2 ; pp. 404-410
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
electroluminescent (EL) devicedriving circuitMOSFETtransformer
 Summary | Full Text:PDF(717.9KB)

Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model
Daijiro SUMINO Yasuhisa OMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7 ; pp. 1443-1450
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
thermal noisesilicon-on-insulatorMOSFETtransmission-line model
 Summary | Full Text:PDF(846.9KB)

Design and Simulation of 4Q-Multiplier Using Linear and Saturation Regions of MOSFET Complementally
Tsutomu SUZUKI Takao OURA Teru YONEYAMA Hideki ASAI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/06/01
Vol. E85-A  No. 6 ; pp. 1242-1248
Type of Manuscript:  Special Section PAPER (Special Section on Papers Selected from 2001 International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2001))
Category: 
Keyword: 
4Q-MultiplierMOSFETlinear regionsaturation regionanalog circuit
 Summary | Full Text:PDF(642.3KB)

A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
Toshihiro MATSUDA Mari FUNADA Takashi OHZONE Etsumasa KAMEDA Shinji ODANAKA Kyoji TAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1125-1133
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
test structureMOSFEThot carrierphotoemission
 Summary | Full Text:PDF(1.8MB)

Operational Transconductance Amplifier with Rail-to-Rail Input Stage Using Single Channel Type MOSFETs
Takahide SATO Shigetaka TAKAGI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/02/01
Vol. E85-A  No. 2 ; pp. 354-359
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
rail-to-rail operationOTAMOSFEToperation region
 Summary | Full Text:PDF(336.4KB)

Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
Ken UCHIDA Junji KOGA Ryuji OHBA Akira TORIUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C  No. 8 ; pp. 1066-1070
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
single-electrontunnelingMOSFETpower
 Summary | Full Text:PDF(718.1KB)

Scaling Limit of the MOS Transistor--A Ballistic MOSFET--
Kenji NATORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C  No. 8 ; pp. 1029-1036
Type of Manuscript:  INVITED PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
ballistic MOSFETscaling limitcurrent-voltage characteristicsMOSFETinjection velocity
 Summary | Full Text:PDF(440.1KB)

MOSFET Instantaneous Companding Integrator
Nobukazu TAKAI Ken-ichi TAKANO Shigetaka TAKAGI Nobuo FUJII 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Vol. E84-A  No. 2 ; pp. 545-551
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category: 
Keyword: 
MOSFETcompanding circuitintegrator
 Summary | Full Text:PDF(590.4KB)

Statistical Modeling of Device Characteristics with Systematic Variability
Kenichi OKADA Hidetoshi ONODERA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Vol. E84-A  No. 2 ; pp. 529-536
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category: 
Keyword: 
MOSFETvariabilitysystematicstochastic
 Summary | Full Text:PDF(325.2KB)

Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
Toshiro HIRAMOTO Makoto TAKAMIYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/02/25
Vol. E83-C  No. 2 ; pp. 161-169
Type of Manuscript:  INVITED PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Category: 
Keyword: 
MOSFETlow powerlow voltagevariable threshold voltageback-biasbody effectDTMOSSOI
 Summary | Full Text:PDF(887.3KB)

Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations
Odin PRIGGE Masami SUETAKE Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 997-1002
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
MOSFETperformance distribution 2σanalytical model
 Summary | Full Text:PDF(739KB)

Inverse Modeling and Its Application to MOSFET Channel Profile Extraction
Hirokazu HAYASHI Hideaki MATSUHASHI Koichi FUKUDA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 862-869
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
inverse modelingdoping profile extractionMOSFETthreshold voltage
 Summary | Full Text:PDF(949.5KB)

A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs
Toshihiro MATSUDA Naoko MATSUYAMA Kiyomi HOSOI Etsumasa KAMEDA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4 ; pp. 593-601
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFEThot carriersphotoemissionjunction breakdown
 Summary | Full Text:PDF(527.4KB)

A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation
Morikazu TSUNO Shin YOKOYAMA Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12 ; pp. 1913-1917
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETlow temperaturevelocity overshootSbnonsteady-stationary effectimpact ionizationhot-carrier
 Summary | Full Text:PDF(491.7KB)

Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs
Risho KOH Tohru MOGAMI Haruo KATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 893-898
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SOIMOSFETfloating body effectsimulationapplicable voltage
 Summary | Full Text:PDF(491.5KB)

Large-Signal Analysis of Power MOSFETs and Its Application to Device Design
Noriaki MATSUNO Hitoshi YANO Yasuyuki SUZUKI Toshiaki INOUE Tetsu TODA Yasushi KOSE Yoichiro TAKAYAMA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 734-739
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
power deviceMOSFETlarge-signal simulationcellular telephone
 Summary | Full Text:PDF(542.2KB)

Features of Ultimately Miniaturized MOSFETs/SOI: A New Stage in Device Physics and Design Concepts
Yasuhisa OMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 394-406
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Device and Process Technologies
Keyword: 
SOISIMOXMOSFETdown-scalingultra-thin
 Summary | Full Text:PDF(984.7KB)

L-Band SPDT Switch Using Si-MOSFET
Yoshitada IYAMA Noriharu SUEMATSU Tomonori SHIGEMATSU Takao MORIWAKI Tatsuhiko IKEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/05/25
Vol. E79-C  No. 5 ; pp. 636-643
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
Category: Active Devices
Keyword: 
switchmicrowaveSiMOSFETcommunication
 Summary | Full Text:PDF(650.3KB)

Effects of Field Edge Steps on Electrical Gate Linewidth Measurements
Naoki KASAI Ichiro YAMAMOTO Koji URABE Kuniaki KOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 152-157
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
test structureMOSFETlinewidthfield step
 Summary | Full Text:PDF(798KB)

Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90and 45
Takashi OHZONE Naoko MATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 172-178
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
MOSFETelectrical characteristics45 CMOSFET
 Summary | Full Text:PDF(560.5KB)

High-Speed and Low-Power n+-p+ Double-Gate SOI CMOS
Kunihiro SUZUKI Tetsu TANAKA Yoshiharu TOSAKA Hiroshi HORIE Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4 ; pp. 360-367
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
MOSFETSOIdouble-gatehigh-speedlow-powerthreshold voltage
 Summary | Full Text:PDF(768.9KB)

A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
Koichi FUKUDA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 281-287
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
device simulationmobilitycarrier screeningimpurity scatteringMOSFET
 Summary | Full Text:PDF(509.7KB)

Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
Koji ERIGUCHI Masatoshi ARAI Yukiharu URAOKA Masafumi KUBOTA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 261-266
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
MOSFETtransconductanceSi-SiO2 interface statecharge-to-breakdownantenna effect
 Summary | Full Text:PDF(497.2KB)

A Novel Effective-Channel-Length/External-Resistance Extraction Method for Small-Geometry MOSFET's
Takaaki YAGI You-Wen YI Mitsuchika SAITOH Nobuo MIKOSHIBA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/12/25
Vol. E77-C  No. 12 ; pp. 1966-1969
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETeffective channel lengthsource-drain resistancelocal Vth
 Summary | Full Text:PDF(318.1KB)

Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS)
Masahiro SHIMIZU Masahide INUISHI Katsuhiro TSUKAMOTO Hideaki ARIMA Hirokazu MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8 ; pp. 1369-1376
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: General Technology
Keyword: 
isolationparasitic field transistorMOSFET
 Summary | Full Text:PDF(933.5KB)

C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO2
Takashi OHZONE Takashi HORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/06/25
Vol. E77-C  No. 6 ; pp. 952-959
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
MOSFETSi-implantationEEPROM
 Summary | Full Text:PDF(684.1KB)

LATID (Large-Angle-Tilt Implanted Drain) FETs with Buried n- Profile for Deep-Submicron ULSIs
Junji HIRASE Takashi HORI Yoshinori ODAKE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 350-354
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
MOSFETLDDn--gate overlapcircuit speedhot-carrier-induced degradation
 Summary | Full Text:PDF(378.8KB)

Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording
Kohro TAKAHASHI Satoshi TAKEUCHI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/02/25
Vol. E77-A  No. 2 ; pp. 388-393
Type of Manuscript:  Special Section PAPER (Special Section on High-Performance MOS Analog Circuits)
Category: 
Keyword: 
MOSFET1/f noisemicroelectrodeextracellular recordinglow noise amplifier
 Summary | Full Text:PDF(605.4KB)

Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS
Kazuhiko KAI Shigeki KURODA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 129-133
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
process simulationmodel for silicide growthSALICIDEsilicidationtitanium disilicideMOSFET
 Summary | Full Text:PDF(401.1KB)

Process and Device Technologies of CMOS Devices for Low-Voltage Operation
Masakazu KAKUMU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/05/25
Vol. E76-C  No. 5 ; pp. 672-680
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power and Low-Voltage Integrated Circuits)
Category: 
Keyword: 
CMOSSOISIMOXMOSFETlow-voltagelow-temperaturethreshold voltage high-speedpower-supply voltagesubthreshold currentcircuit performancepower dissipation
 Summary | Full Text:PDF(687.8KB)

Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs
Toshiaki TSUCHIYA Mitsuru HARADA Kimiyoshi DEGUCHI Tadahito MATSUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 506-510
Type of Manuscript:  INVITED PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
MOSFETreliabilityhot carriersynchrotron X-ray
 Summary | Full Text:PDF(473.4KB)

Multi-Step Function MOS Transistor Circuits
Shinji KARASAWA Kazuhiko YAMANOUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/03/25
Vol. E76-C  No. 3 ; pp. 357-363
Type of Manuscript:  INVITED PAPER (Special Issue on Multiple-Valued Integrated Circuits)
Category: 
Keyword: 
MOSFETpunch-through effectquantizing circuitmultiple-valued flip-flop
 Summary | Full Text:PDF(542.6KB)

Small-Signal High Frequency MOSFET Model Considering Two-Field-Dependent Mobility Effect
Laredj BELABAS Nobuo FUJII Shigetaka TAKAGI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1993/02/25
Vol. E76-A  No. 2 ; pp. 193-203
Type of Manuscript:  Special Section PAPER (Special Section on High-Speed Analog Circuits and Signal Processing)
Category: 
Keyword: 
MOSFEThigh frequency modelmobility
 Summary | Full Text:PDF(635.5KB)

Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's
Kazuo SUKEGAWA Seiichiro KAWAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1484-1490
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Hot Carrier
Keyword: 
SIMOXMOSFEThot carrier effectelectron trapping
 Summary | Full Text:PDF(575.5KB)