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Keyword : MOSFET
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Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo ENDOH
Koji SAKUI
Yukio YASUDA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C
No. 5
pp. 557-562
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword:
vertical MOSFET,
3D structured device,
MOSFET,
LSI,
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Summary |
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Gate-Extension Overlap Control by Sb Tilt Implantation
Kentaro SHIBAHARA
Nobuhide MAEDA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C
No. 5
pp. 973-977
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword:
MOSFET,
extension,
gate,
overlap,
tilt implantation,
Sb,
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Summary |
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A 380-MHz CMOS Linear-in-dB Variable Gain Amplifier with Gain Compensation Techniques for CDMA Systems
Osamu WATANABE
Mitsuyuki ASHIDA
Tetsuro ITAKURA
Shoji OTAKA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C
No. 6
pp. 1069-1076
Type of Manuscript: Special Section PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category:
Keyword:
variable gain amplifier,
VGA,
gain compensation,
temperature compensation,
linear-in-dB characteristics,
square circuit,
MOSFET,
square-law region,
exponential-law region,
CDMA,
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Design and Simulation of 4Q-Multiplier Using Linear and Saturation Regions of MOSFET Complementally
Tsutomu SUZUKI
Takao OURA
Teru YONEYAMA
Hideki ASAI
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Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/06/01
Vol. E85-A
No. 6
pp. 1242-1248
Type of Manuscript: Special Section PAPER (Special Section on Papers Selected from 2001 International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2001))
Category:
Keyword:
4Q-Multiplier,
MOSFET,
linear region,
saturation region,
analog circuit,
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Summary |
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Operational Transconductance Amplifier with Rail-to-Rail Input Stage Using Single Channel Type MOSFETs
Takahide SATO
Shigetaka TAKAGI
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Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/02/01
Vol. E85-A
No. 2
pp. 354-359
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category:
Keyword:
rail-to-rail operation,
OTA,
MOSFET,
operation region,
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Summary |
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Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
Ken UCHIDA
Junji KOGA
Ryuji OHBA
Akira TORIUMI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C
No. 8
pp. 1066-1070
Type of Manuscript: Special Section PAPER (Special Issue on Silicon Nanodevices)
Category:
Keyword:
single-electron,
tunneling,
MOSFET,
power,
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Summary |
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Statistical Modeling of Device Characteristics with Systematic Variability
Kenichi OKADA
Hidetoshi ONODERA
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Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Vol. E84-A
No. 2
pp. 529-536
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category:
Keyword:
MOSFET,
variability,
systematic,
stochastic,
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Summary |
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Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs
Risho KOH
Tohru MOGAMI
Haruo KATO
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/20
Vol. E80-C
No. 7
pp. 893-898
Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword:
SOI,
MOSFET,
floating body effect,
simulation,
applicable voltage,
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Summary |
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Features of Ultimately Miniaturized MOSFETs/SOI: A New Stage in Device Physics and Design Concepts
Yasuhisa OMURA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/20
Vol. E80-C
No. 3
pp. 394-406
Type of Manuscript: INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Device and Process Technologies
Keyword:
SOI,
SIMOX,
MOSFET,
down-scaling,
ultra-thin,
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Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90 and 45
Takashi OHZONE
Naoko MATSUYAMA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/20
Vol. E79-C
No. 2
pp. 172-178
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword:
MOSFET,
electrical characteristics,
45 CMOSFET,
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Summary |
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C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO2
Takashi OHZONE
Takashi HORI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1994/06/20
Vol. E77-C
No. 6
pp. 952-959
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword:
MOSFET,
Si-implantation,
EEPROM,
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Summary |
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Process and Device Technologies of CMOS Devices for Low-Voltage Operation
Masakazu KAKUMU
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1993/05/20
Vol. E76-C
No. 5
pp. 672-680
Type of Manuscript: INVITED PAPER (Special Section on Low-Power and Low-Voltage Integrated Circuits)
Category:
Keyword:
CMOS,
SOI,
SIMOX,
MOSFET,
low-voltage,
low-temperature,
threshold voltage high-speed,
power-supply voltage,
subthreshold current,
circuit performance,
power dissipation,
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Summary |
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Small-Signal High Frequency MOSFET Model Considering Two-Field-Dependent Mobility Effect
Laredj BELABAS
Nobuo FUJII
Shigetaka TAKAGI
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Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1993/02/20
Vol. E76-A
No. 2
pp. 193-203
Type of Manuscript: Special Section PAPER (Special Section on High-Speed Analog Circuits and Signal Processing)
Category:
Keyword:
MOSFET,
high frequency model,
mobility,
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Summary |
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CMOSFET