Keyword : MOS switch


A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation
Kenichi AGAWA Shinichiro ISHIZUKA Hideaki MAJIMA Hiroyuki KOBAYASHI Masayuki KOIZUMI Takeshi NAGANO Makoto ARAI Yutaka SHIMIZU Asuka MAKI Go URAKAWA Tadashi TERADA Nobuyuki ITOH Mototsugu HAMADA Fumie FUJII Tadamasa KATO Sadayuki YOSHITOMI Nobuaki OTSUKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/06/01
Vol. E93-C  No. 6 ; pp. 803-811
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
CMOS wireless transceiverBluetoothsensitivitytemperature compensationphase noiseVCO pullingMOS switchleakage current
 Summary | Full Text:PDF(2.7MB)

Input-Dependent Sampling-Time Error Effects Due to Finite Clock Slope in MOS Samplers
Naoto HAYASAKA Haruo KOBAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 1015-1021
Type of Manuscript:  Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
samplingjitterMOS switchtrack/hold circuitADC
 Summary | Full Text:PDF(507.4KB)