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Keyword : MESFET
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Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
Jae-Gil LEE
Chun-Hyung CHO
Ho-Young CHA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C
No. 5
pp. 842-845
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
buried gate,
field plate,
MESFET,
silicon carbide,
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A GaAs Single Voltage Controlled RF Switch IC
Kazuo MIYATSUJI
Daisuke UEDA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/20
Vol. E78-C
No. 8
pp. 931-935
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category:
Keyword:
GaAs,
MESFET,
switch,
BST,
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Design of a 3.2 GHz 50 mW 0.5 µm GaAs PLL-Based Clock Generator with 1 V Power Supply
Tadayoshi ENOMOTO
Toshiyuki OKUYAMA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1994/12/20
Vol. E77-C
No. 12
pp. 1957-1965
Type of Manuscript: Special Section PAPER (Special Issue on Multimedia, Analog and Processing LSIs)
Category: Processor Interfaces
Keyword:
phase-locked loop (PLL),
clock pulse generator (CG),
voltage controlled ring oscillater (VCO),
VCO gain,
GaAs,
MESFET,
DCFL circuit,
pull-in frequency,
pull-in range,
pull-in time,
lock range,
lock time,
locked state,
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s and Their Application to V-Band Amplifiers