Keyword : LDMOS


Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
Takahiro IIZUKA Kenji FUKUSHIMA Akihiro TANAKA Hideyuki KIKUCHIHARA Masataka MIYAKE Hans J. MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 744-751
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFETLDMOSHiSIMtrench-gate MOSFET compact model
 Summary | Full Text:PDF(2.7MB)

A New LDMOS Transistor Macro-Modeling for Accurately Predicting Bias Dependence of Gate-Overlap Capacitance
Takashi SAITO Toshiki KANAMOTO Saiko KOBAYASHI Nobuhiko GOTO Takao SATO Hitoshi SUGIHARA Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2010/09/01
Vol. E93-A  No. 9 ; pp. 1605-1611
Type of Manuscript:  PAPER
Category: VLSI Design Technology and CAD
Keyword: 
LDMOSmacro modelgate-overlap capacitancecircuit simulation
 Summary | Full Text:PDF(1.6MB)

A 200 V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
Kazunori KAWAMOTO Hitoshi YAMAGUCHI Hiroaki HIMI Seiji FUJINO Isao SHIRAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2 ; pp. 260-266
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
high voltage CMOSthick SOItrench isolationEL driverLDMOS
 Summary | Full Text:PDF(1.3MB)

Process Synthesis Using TCAD: A Mixed-Signal Case Study
Michael SMAYLING John RODRIGUEZ Alister YOUNG Ichiro FUJII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 983-991
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
process integrationprocess recipescomponentsmixed-signal processflash memoryLDMOSESD circuit
 Summary | Full Text:PDF(559.5KB)