Keyword : InP


InP-Based Photodetectors Monolithically Integrated with 90° Hybrid toward Over 400Gb/s Coherent Transmission Systems
Hideki YAGI Takuya OKIMOTO Naoko INOUE Koji EBIHARA Kenji SAKURAI Munetaka KUROKAWA Satoru OKAMOTO Kazuhiko HORINO Tatsuya TAKEUCHI Kouichiro YAMAZAKI Yoshifumi NISHIMOTO Yasuo YAMASAKI Mitsuru EKAWA Masaru TAKECHI Yoshihiro YONEDA 
Publication:   
Publication Date: 2019/04/01
Vol. E102-C  No. 4 ; pp. 347-356
Type of Manuscript:  INVITED PAPER (Special Section on Progress in Optical Device Technology for Increasing Data Transmission Capacity)
Category: 
Keyword: 
digital coherent transmissionInP90° hybridmultimode interference structurep-i-n photodiode
 Summary | Full Text:PDF(2MB)

InP-Based Monolithic Integration Technologies for 100/200Gb/s Pluggable Coherent Transceivers
Hideki YAGI Yoshihiro YONEDA Mitsuru EKAWA Hajime SHOJI 
Publication:   
Publication Date: 2017/02/01
Vol. E100-C  No. 2 ; pp. 179-186
Type of Manuscript:  INVITED PAPER (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)
Category: 
Keyword: 
coherent transmissionInPDP-IQ modulator90° hybridp-i-n photodiode
 Summary | Full Text:PDF(2.2MB)

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage
Norihide KASHIO Takuya HOSHI Kenji KURISHIMA Minoru IDA Hideaki MATSUZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5 ; pp. 522-527
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
heterojunction bipolar transistorsInPInGaAsSbGaAsSb
 Summary | Full Text:PDF(1.2MB)

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1310-1316
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InPInGaAsHBTturn-on voltage
 Summary | Full Text:PDF(1.5MB)

Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
Yutaro YAMAGUCHI Takeshi SAGAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1323-1326
Type of Manuscript:  BRIEF PAPER
Category: III-V High-Speed Devices and Circuits
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancetransferred-substrateheterogeneous integration
 Summary | Full Text:PDF(619.5KB)

Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
Naoaki TAKEBE Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 917-920
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancein situ etching
 Summary | Full Text:PDF(571.1KB)

Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
Naoaki TAKEBE Takashi KOBAYASHI Hiroyuki SUZUKI Yasuyuki MIYAMOTO Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 830-834
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
heterojunction bipolar transistorInPMOCVDCBr4
 Summary | Full Text:PDF(1MB)

InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
Mi-Ra KIM Jin-Koo RHEE Chang-Woo LEE Yeon-Sik CHAE Jae-Hyun CHOI Wan-Joo KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 585-589
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
InPGunn diodesshallow-barrier schottky contactscurrent-limiting cathode
 Summary | Full Text:PDF(2.7MB)

High-Speed, Low-Driving-Voltage Dual-Drive InP-Based Mach-Zehnder Modulator
Nobuhiro KIKUCHI Ken TSUZUKI Takeshi KUROSAKI Yasuo SHIBATA Hiroshi YASAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/02/01
Vol. E92-C  No. 2 ; pp. 205-211
Type of Manuscript:  INVITED PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
Category: 
Keyword: 
Mach-Zehnder modulatorn-i-n structureInP
 Summary | Full Text:PDF(1.2MB)

InP HEMT Technology for High-Speed Logic and Communications
Tetsuya SUEMITSU Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 917-922
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
HEMTInPcutoff frequencyOEIC
 Summary | Full Text:PDF(990.1KB)

Fabrication and Characterization of Capless In0.52Al0.48As/In0.53Ga0.47As HEMTs
Jae-Hyung JANG Ilesanmi ADESIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/08/01
Vol. E89-C  No. 8 ; pp. 1259-1262
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
InGaAsInPcapless HEMTs
 Summary | Full Text:PDF(556.7KB)

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 949-953
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMTInPInGaAsInAlAslattice-matchedcurrent gain cutoff frequency
 Summary | Full Text:PDF(1.1MB)

Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer
Yasuyuki MIYAMOTO Ryo NAKAGAWA Issei KASHIMA Masashi ISHIDA Nobuya MACHIDA Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 972-978
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
hot electron transistorInPballistic electronelectron beam lithography
 Summary | Full Text:PDF(791.8KB)

InP DHBT Based IC Technology for over 80 Gbit/s Data Communications
Rachid DRIAD Robert E. MAKON Karl SCHNEIDER Ulrich NOWOTNY Rolf AIDAM Rudiger QUAY Michael SCHLECHTWEG Michael MIKULLA Gunter WEIMANN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 931-936
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
InPdouble heterojunction bipolar transistor (DHBT)integrated circuits (ICs)amplifiervoltage controlled oscillator (VCO)multiplexer (MUX)
 Summary | Full Text:PDF(1MB)

Low Driving Voltage 40 Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate
Ken TSUZUKI Tadao ISHIBASHI Hiroshi YASAKA Yuichi TOHMORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 960-966
Type of Manuscript:  Special Section PAPER (Joint Special Section on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
Keyword: 
Mach-ZehndermodulatorInPn-i-nsemiconductor
 Summary | Full Text:PDF(607.4KB)

Design of Flash Analog-to-Digital Converters Using Resonant-Tunneling Circuits
Yuuki TSUJI Takao WAHO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/11/01
Vol. E87-C  No. 11 ; pp. 1863-1868
Type of Manuscript:  Special Section PAPER (Special Section on New System Paradigms for Integrated Electronics)
Category: 
Keyword: 
resonant-tunneling diodeflash analog-to-digital converterHEMTInPmulti-input gate
 Summary | Full Text:PDF(632KB)

First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs
Xin ZHU Dimitris PAVLIDIS Guangyuan ZHAO Philippe BOVE Hacene LAHRECHE Robert LANGER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2010-2014
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
DHBTheterojunctionInPGaAsSb
 Summary | Full Text:PDF(266.7KB)

Optoelectronic/Photonic Integrated Circuits on InP between Technological Feasibility and Commercial Success
Ronald KAISER Helmut HEIDRICH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/04/01
Vol. E85-C  No. 4 ; pp. 970-981
Type of Manuscript:  INVITED PAPER (Special Issue on Recent Progress of Integrated Photonic Devices)
Category: Active Devices
Keyword: 
integrated circuitOEICsPICsInP
 Summary | Full Text:PDF(961.7KB)

InP DHBT with 0.5 µ m Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter
Toshiki ARAI Shigeharu YAMAGAMI Yoshifumi OKUDA Yoshimichi HARADA Yasuyuki MIYAMOTO Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1394-1398
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InPHBTnarrow emitter
 Summary | Full Text:PDF(519KB)

Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer
Hiroshi TAKAHASHI Masatsugu YAMADA Yong-Gui XIE Seiya KASAI Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1344-1349
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InPMISFETXPSC-V
 Summary | Full Text:PDF(1.2MB)

High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs
Akira ENDOH Yoshimi YAMASHITA Masataka HIGASHIWAKI Kohki HIKOSAKA Takashi MIMURA Satoshi HIYAMIZU Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1328-1334
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InAlAs/InGaAsInPHEMTcutoff frequencylow-temperature fabrication process
 Summary | Full Text:PDF(948KB)

Hydrogen Degradation of InP HEMTs and GaAs PHEMTs
Jesus A. del ALAMO Roxann R. BLANCHARD Samuel D. MERTENS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1289-1293
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high-electron mobility transistorhydrogenreliabilityInPGaAs
 Summary | Full Text:PDF(606.9KB)

InP/InGaAs Uni-Traveling-Carrier Photodiodes
Tadao ISHIBASHI Tomofumi FURUTA Hiroshi FUSHIMI Satoshi KODAMA Hiroshi ITO Tadao NAGATSUMA Naofumi SHIMIZU Yutaka MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/06/25
Vol. E83-C  No. 6 ; pp. 938-949
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks)
Category: High-Speed Optical Devices
Keyword: 
photodiodephotoreceiverInPInGaAs
 Summary | Full Text:PDF(1.8MB)

High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors
Eiichi SANO Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 2000-2006
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
InPHBTamplifierflip-flopPLL
 Summary | Full Text:PDF(1.7MB)

InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond
Eiichi SANO Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1879-1885
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Information and Communication System
Keyword: 
InPHEMTanalog ICdigital ICpackaging
 Summary | Full Text:PDF(2MB)

49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
Yohtaro UMEDA Kazuo OSAFUNE Takatomo ENOKI Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7 ; pp. 1080-1085
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
InPHEMTICinterconnectiondelaystatic frequency divider
 Summary | Full Text:PDF(1.3MB)

Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 409-418
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: 
Keyword: 
InPHEMTICoptical communicationdelay
 Summary | Full Text:PDF(1.3MB)

Characterization of Butt-Joint InGaAsP Waveguides and Their Application to 1310 nm DBR-Type MQW Gain-Clamped Semiconductor Optical Amplifiers
J.J.M. BINSMA P.J.A. THIJS T. van DONGEN E.J. JANSEN A.A.M.(Toine) STARING G.N. van den HOVEN L.F. TIEMEIJER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5 ; pp. 675-681
Type of Manuscript:  Special Section PAPER (Special Issue on Photonic Integrated Circuits)
Category: 
Keyword: 
photonic integrationInPbutt-jointgain-clamped semiconductor optical amplifier
 Summary | Full Text:PDF(681.2KB)

A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Naohito YOSHIDA Toshiaki KITANO Yoshitsugu YAMAMOTO Takayuki KATOH Hiroyuki MINAMI Takuo KASHIWA Takuji SONODA Hirozo TAKANO Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1279-1285
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
HEMTAlInAs/InGaAsInPlow-noiseselectiverecess
 Summary | Full Text:PDF(765.5KB)

Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
Hiroki NAKAJIMA Kenji KURISHIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2 ; pp. 186-192
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
InPInGaAsHBThigh-speedlow-power
 Summary | Full Text:PDF(567KB)

Four-Channel Reciever optoelectronic Integrated Circuit Arrays for Optical Interconnections
Hideki HAYASHI Goro SASAKI Hiroshi YANO Naoki NISHIYAMA Michio MURATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/01/25
Vol. E77-C  No. 1 ; pp. 23-29
Type of Manuscript:  Special Section PAPER (Special Issue on Optical Interconnection)
Category: 
Keyword: 
OEICarray devicecrosstalkInP
 Summary | Full Text:PDF(598.4KB)

Novel Channel Structures for High Frequency InP-Based HTEFs
Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1402-1411
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
InGaAsInAsInAlAsInPcurrent gain cutoff frequencydelay timesheterojunction FETquantum wellreal-space transfer
 Summary | Full Text:PDF(915.1KB)

Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n+-InGaAs/n+-InAlAs Cap Layer
Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/06/25
Vol. E75-C  No. 6 ; pp. 649-655
Type of Manuscript:  Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
InGaAsHEMTlow noiseequivalent circuitInP
 Summary | Full Text:PDF(707.7KB)