Keyword : InGaP

Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation
Kazuhiro MOCHIZUKI  Ken-ichi TANAKA  Takashi SHIOTA  Takafumi TANIGUCHI  Hiroyuki UCHIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 943-948
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
heterojunction bipolar transistor,  reliability,  rapid thermal annealing,  GaAs,  InGaP, 
  Summary |  Full Text:PDF (897.4KB)
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure
Naohiro TSURUMI  Motonori ISHII  Masaaki NISHIJIMA  Manabu YANAGIHARA  Tsuyoshi TANAKA  Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2004-2009
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
HBT,  InGaP,  GaAs,  ledge,  capacitor,  base resistance,  recombination, 
  Summary |  Full Text:PDF (710.7KB)
High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate
Akio WAKEJIMA  Kazuki OTA  Kohji MATSUNAGA  Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 2041-2045
Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
field-modulating plate,  InGaP,  field effect transistor (FET),  intermodulation distortion, 
  Summary |  Full Text:PDF (519.2KB)
HBT Collector Characterization by the Spectral Photocurrent Technique
Fritz SCHUERMEYER  Peter J. ZAMPARDI  Sharon FITZSIMMONS  Roger E. WELSER  Noren PAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1383-1388
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
photoluminescence,  HBT,  GaAs,  AlGaAs,  InGaP, 
  Summary |  Full Text:PDF (399.1KB)
An InGaP/GaAs Composite Channel FET for High Power Device Applications
Shigeru NAKAJIMA  Ken NAKATA  Kunio TANAKA  Kenji OTOBE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1300-1305
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high power device,  InGaP,  FET,  electron transport, 
  Summary |  Full Text:PDF (544.4KB)
High Power In0.49Ga0.51P/In0.15Ga0.85As Heterostructure Doped-Channel FETs
Hsien-Chin CHIU  Shih-Cheng YANG  Yi-Jen CHAN  Hao-Hsiung LIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1312-1317
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
DCFET,  InGaP,  power,  performance,  RIE, 
  Summary |  Full Text:PDF (802.9KB)
0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications
Naoki HARADA  Tamio SAITO  Hideyuki OIKAWA  Yoji OHASHI  Yuji AWANO  Masayuki ABE  Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/20
Vol. E81-C  No. 6  pp. 876-881
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
mm-wave,  MMIC,  HEMT,  InGaP,  low noise amplifier, 
  Summary |  Full Text:PDF (627.2KB)
A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs
Kazumi NISHIMURA  Kiyomitsu ONODERA  Kou INOUE  Masami TOKUMITSU  Fumiaki HYUGA  Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/20
Vol. E78-C  No. 8  pp. 907-910
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
WSiN,  InGaP,  asymmetric LDD structure,  GaAs,  MMIC, 
  Summary |  Full Text:PDF (475.2KB)