Keyword : InGaAs


Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance
Masayuki YAMADA Ken UCHIDA Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5 ; pp. 419-422
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
InGaAsMOSFETdynamic source resistancedelay component
 Summary | Full Text:PDF(355.4KB)

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1310-1316
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InPInGaAsHBTturn-on voltage
 Summary | Full Text:PDF(1.5MB)

Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
Atsushi KATO Toru KANAZAWA Shunsuke IKEDA Yoshiharu YONAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 904-909
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
back-sourceMOSFETInGaAsBCBbonding
 Summary | Full Text:PDF(1.8MB)

Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method
Takayuki TAKEGISHI Hisanao WATANABE Shinsuke HARA Hiroki I. FUJISHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1258-1265
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
Keyword: 
quantum-corrected Monte CarloHEMTInAsInGaAsdelay timecutoff frequency
 Summary | Full Text:PDF(1.7MB)

Fabrication and Characterization of Capless In0.52Al0.48As/In0.53Ga0.47As HEMTs
Jae-Hyung JANG Ilesanmi ADESIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/08/01
Vol. E89-C  No. 8 ; pp. 1259-1262
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
InGaAsInPcapless HEMTs
 Summary | Full Text:PDF(556.7KB)

Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities
Hideki ONO Satoshi TANIGUCHI Toshi-kazu SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1020-1024
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
impurity diffusioncurrent-enhanced diffusiondefectstunnel diodesmetamorphic devicesInGaAscarbon
 Summary | Full Text:PDF(658.6KB)

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 949-953
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMTInPInGaAsInAlAslattice-matchedcurrent gain cutoff frequency
 Summary | Full Text:PDF(1.1MB)

Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer
Yong-Gui XIE Seiya KASAI Hiroshi TAKAHASHI Chao JIANG Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1335-1343
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
insulated gatePHEMTInGaAsinterface controlFermi level pinning
 Summary | Full Text:PDF(793.9KB)

InP/InGaAs Uni-Traveling-Carrier Photodiodes
Tadao ISHIBASHI Tomofumi FURUTA Hiroshi FUSHIMI Satoshi KODAMA Hiroshi ITO Tadao NAGATSUMA Naofumi SHIMIZU Yutaka MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/06/25
Vol. E83-C  No. 6 ; pp. 938-949
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks)
Category: High-Speed Optical Devices
Keyword: 
photodiodephotoreceiverInPInGaAs
 Summary | Full Text:PDF(1.8MB)

Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
Hiroki NAKAJIMA Kenji KURISHIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2 ; pp. 186-192
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
InPInGaAsHBThigh-speedlow-power
 Summary | Full Text:PDF(567KB)

Design of a 1 W, Single Filament Laser Diode
Iulian B. PETRESCU-PRAHOVA Manuela BUDA Theo G. van de ROER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1472-1478
Type of Manuscript:  PAPER
Category: Opto-Electronics
Keyword: 
laser diodehigh powerAlGaAsInGaAs
 Summary | Full Text:PDF(649.1KB)

Novel Channel Structures for High Frequency InP-Based HTEFs
Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1402-1411
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
InGaAsInAsInAlAsInPcurrent gain cutoff frequencydelay timesheterojunction FETquantum wellreal-space transfer
 Summary | Full Text:PDF(915.1KB)

N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching
Naoki HARADA Shigeru KURODA Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1165-1171
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMTInGaAsSchottky junctionDCELdry etching
 Summary | Full Text:PDF(559.3KB)

Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n+-InGaAs/n+-InAlAs Cap Layer
Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/06/25
Vol. E75-C  No. 6 ; pp. 649-655
Type of Manuscript:  Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
InGaAsHEMTlow noiseequivalent circuitInP
 Summary | Full Text:PDF(707.7KB)