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Keyword : InGaAs

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 pp. 1310-1316 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: III-V High-Speed Devices and Circuits Keyword: InP, InGaAs, HBT, turn-on voltage,
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Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode Atsushi KATO Toru KANAZAWA Shunsuke IKEDA Yoshiharu YONAI Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 904-909 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: back-source, MOSFET, InGaAs, BCB, bonding,
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Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method Takayuki TAKEGISHI Hisanao WATANABE Shinsuke HARA Hiroki I. FUJISHIRO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 pp. 1258-1265 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: III-V High-Speed Devices and Circuits Keyword: quantum-corrected Monte Carlo, HEMT, InAs, InGaAs, delay time, cutoff frequency,
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Fabrication and Characterization of Capless In_0.52Al_0.48As/In_0.53Ga_0.47As HEMTs Jae-Hyung JANG Ilesanmi ADESIDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/08/01 Vol. E89-C No. 8 pp. 1259-1262 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: InGaAs, InP, capless HEMTs,
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Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 949-953 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Millimeter-Wave Devices Keyword: HEMT, InP, InGaAs, InAlAs, lattice-matched, current gain cutoff frequency,
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Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities Hideki ONO Satoshi TANIGUCHI Toshi-kazu SUZUKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 1020-1024 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: THz Devices Keyword: impurity diffusion, current-enhanced diffusion, defects, tunnel diodes, metamorphic devices, InGaAs, carbon,
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Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HEMTs Having a Silicon Interface Control Layer Yong-Gui XIE Seiya KASAI Hiroshi TAKAHASHI Chao JIANG Hideki HASEGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1335-1343 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: insulated gate, PHEMT, InGaAs, interface control, Fermi level pinning,
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InP/InGaAs Uni-Traveling-Carrier Photodiodes Tadao ISHIBASHI Tomofumi FURUTA Hiroshi FUSHIMI Satoshi KODAMA Hiroshi ITO Tadao NAGATSUMA Naofumi SHIMIZU Yutaka MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/06/20 Vol. E83-C No. 6 pp. 938-949 Type of Manuscript: INVITED PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks) Category: High-Speed Optical Devices Keyword: photodiode, photoreceiver, InP, InGaAs,
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Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors Hiroki NAKAJIMA Kenji KURISHIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/02/20 Vol. E78-C No. 2 pp. 186-192 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: InP, InGaAs, HBT, high-speed, low-power,
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Design of a 1 W, Single Filament Laser Diode Iulian B. PETRESCU-PRAHOVA Manuela BUDA Theo G. van de ROER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/20 Vol. E77-C No. 9 pp. 1472-1478 Type of Manuscript: PAPER Category: Opto-Electronics Keyword: laser diode, high power, AlGaAs, InGaAs,
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Novel Channel Structures for High Frequency InP-Based HTEFs Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/09/20 Vol. E76-C No. 9 pp. 1402-1411 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices) Category: Keyword: InGaAs, InAs, InAlAs, InP, current gain cutoff frequency, delay times, heterojunction FET, quantum well, real-space transfer,
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N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching Naoki HARADA Shigeru KURODA Kohki HIKOSAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/10/20 Vol. E75-C No. 10 pp. 1165-1171 Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits) Category: Keyword: HEMT, InGaAs, Schottky junction, DCEL, dry etching,
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Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n⁺-InGaAs/n⁺-InAlAs Cap Layer Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/06/20 Vol. E75-C No. 6 pp. 649-655 Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology) Category: Keyword: InGaAs, HEMT, low noise, equivalent circuit, InP,
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