Keyword : InAs


InAs Nanowire Circuits Fabricated by Field-Assisted Self-Assembly on a Host Substrate
Kai BLEKKER Rene RICHTER Ryosuke ODA Satoshi TANIYAMA Oliver BENNER Gregor KELLER Benjamin MUNSTERMANN Andrey LYSOV Ingo REGOLIN Takao WAHO Werner PROST 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1369-1375
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: Emerging Devices
Keyword: 
InAsnanowirefield-effect transistorself-assemblydigital circuit
 Summary | Full Text:PDF(1.3MB)

Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method
Takayuki TAKEGISHI Hisanao WATANABE Shinsuke HARA Hiroki I. FUJISHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1258-1265
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
Keyword: 
quantum-corrected Monte CarloHEMTInAsInGaAsdelay timecutoff frequency
 Summary | Full Text:PDF(1.7MB)

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
J. Brad BOOS Brian R. BENNETT Nicolas A. PAPANICOLAOU Mario G. ANCONA James G. CHAMPLAIN Yeong-Chang CHOU Michael D. LANGE Jeffrey M. YANG Robert BASS Doewon PARK Ben V. SHANABROOK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1050-1057
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
HEMTsHFETsMMICsInAsInGaSb
 Summary | Full Text:PDF(724KB)

Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires
Kenji HIRUMA Hisaya MURAKOSHI Masamitsu YAZAWA Kensuke OGAWA Satoru FUKUHARA Masataka SHIRAI Toshio KATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1420-1425
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
GaAsInAsquantum wirewhiskerSTM
 Summary | Full Text:PDF(782.2KB)

Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition
Kenji FUNATO Kenichi TAIRA Fumihiko NAKAMURA Hiroji KAWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1384-1391
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
hot electron transistor (HET)thermionic emissionGaSbInAs
 Summary | Full Text:PDF(639.6KB)

Novel Channel Structures for High Frequency InP-Based HTEFs
Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1402-1411
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
InGaAsInAsInAlAsInPcurrent gain cutoff frequencydelay timesheterojunction FETquantum wellreal-space transfer
 Summary | Full Text:PDF(915.1KB)