Keyword : HfS2


Type-II HfS2/MoS2 Heterojunction Transistors
Seiko NETSU Toru KANAZAWA Teerayut UWANNO Tomohiro AMEMIYA Kosuke NAGASHIO Yasuyuki MIYAMOTO 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5 ; pp. 338-342
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
TMDCMoS2HfS2tunnel FETheterojunction
 Summary | Full Text:PDF(1MB)

Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation
Vikrant UPADHYAYA Toru KANAZAWA Yasuyuki MIYAMOTO 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 453-457
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
HfS2field effect transistorsenvironmental degradationpassivationPMMAvacuum annealing
 Summary | Full Text:PDF(733.1KB)