Keyword : HEMT


Possibilities of Large Voltage Swing Hard-Type Oscillators Based on Series-Connected Resonant Tunneling Diodes
Koichi MAEZAWA Masayuki MORI 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5 ; pp. 305-310
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resonant tunneling diodehard-type oscillatorHEMTspurious oscillationvoltage swing
 Summary | Full Text:PDF(943.9KB)

Evaluation of Interference between Parallel 120-GHz-Band Wireless Link Systems with High-Gain Cassegrain Antennas
Jun TAKEUCHI Akihiko HIRATA Hiroyuki TAKAHASHI Naoya KUKUTSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/10/01
Vol. E96-C  No. 10 ; pp. 1294-1300
Type of Manuscript:  Special Section PAPER (Special Section on Emerging Technologies and Applications for Microwave and Millimeter-Wave Systems)
Category: 
Keyword: 
millimeter-wave radio communicationsbroadband communicationsphotodiodeHEMT
 Summary | Full Text:PDF(995.8KB)

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
Maiko HATANO Norimasa YAFUNE Hirokuni TOKUDA Yoshiyuki YAMAMOTO Shin HASHIMOTO Katsushi AKITA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1332-1336
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN channelhigh temperatureHEMT
 Summary | Full Text:PDF(3MB)

High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Masayuki ABE Noriaki KOGUSHI Kian Siong ANG René HOFSTETTER Kumar MANOJ Louis Nicholas RETNAM Hong WANG Geok Ing NG Chon JIN Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1354-1362
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Seebeck effectheterostructure-thermopileAlGaAs/InGaAsAlGaN/GaNHEMTFPAinfrared image sensor
 Summary | Full Text:PDF(3.9MB)

DC and RF Performance of AlN/GaN MOS-HEMTs
Sanna TAKING Douglas MACFARLANE Ali Z. KHOKHAR Amir M. DABIRAN Edward WASIGE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 835-841
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
AlN/GaNHEMTMOS-HEMTAl2O3wet etchingthermal oxidationsmall-signal model
 Summary | Full Text:PDF(1.9MB)

Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes
Nobuhiko TANAKA Mitsufumi SAITO Michihiko SUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 820-825
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
isolatorRTDHEMTunidirectional characteristicsmillimeter wave
 Summary | Full Text:PDF(1.2MB)

Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Naoteru SHIGEKAWA Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1212-1217
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
GaNHEMTthreshold voltagepiezoelectric effectsfilm stress
 Summary | Full Text:PDF(586.5KB)

Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method
Takayuki TAKEGISHI Hisanao WATANABE Shinsuke HARA Hiroki I. FUJISHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1258-1265
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
Keyword: 
quantum-corrected Monte CarloHEMTInAsInGaAsdelay timecutoff frequency
 Summary | Full Text:PDF(1.7MB)

The 8th Harmonic Push-Push Oscillator in V Band
Kengo KAWASAKI Takayuki TANAKA Masayoshi AIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/07/01
Vol. E93-C  No. 7 ; pp. 1000-1006
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
Push-Push oscillatorHEMTmillimeter-wave oscillator
 Summary | Full Text:PDF(4.7MB)

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Hironari CHIKAOKA Yoichi TAKAKUWA Kenji SHIOJIMA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 691-695
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GaNHEMTpotential barriercontact resistancetunneling current density
 Summary | Full Text:PDF(813.9KB)

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 989-993
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
normally-offAlGaN/GaNHEMTInGaN cap
 Summary | Full Text:PDF(816.9KB)

Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors
Michihiko SUHARA Eri UEKI Tsugunori OKUMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1070-1075
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Emerging Devices
Keyword: 
gyratoractive inductorsresonant tunneling diodeHEMTmillimeter wave
 Summary | Full Text:PDF(287.1KB)

A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
Koichi MAEZAWA Ikuo SOGA Shigeru KISHIMOTO Takashi MIZUTANI Kazuhiro AKAMATSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1025-1030
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Novel Integration Technology
Keyword: 
heterogeneous integrationfluidic self-assemblyHEMTSPDT switchSOI
 Summary | Full Text:PDF(1.5MB)

A Design of HEMT Comparators for Ultrahigh-Speed A/D Conversion
Hiroshi WATANABE Shunsuke NAKAMURA Takao WAHO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 688-692
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
comparatorD-latchHEMTanalog-to-digital converter
 Summary | Full Text:PDF(347.4KB)

InP HEMT Technology for High-Speed Logic and Communications
Tetsuya SUEMITSU Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 917-922
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
HEMTInPcutoff frequencyOEIC
 Summary | Full Text:PDF(990.1KB)

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Yong CAI Yugang ZHOU Kei May LAU Kevin J. CHEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1025-1030
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
enhancement modeAlGaN/GaNHEMTfluorideplasma treatmentthreshold voltage
 Summary | Full Text:PDF(564.1KB)

Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
Oktay YILMAZOGLU Kabula MUTAMBA Dimitris PAVLIDIS Marie Rose MBARGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1037-1041
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaNpressure sensorHEMTSchottky diode
 Summary | Full Text:PDF(436.6KB)

Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer
Mitsuhiro HANABE Takuya NISHIMURA Masaki MIYAMOTO Taiichi OTSUJI Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 985-992
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
plasmon resonancephotomixerterahertzgratingHEMT
 Summary | Full Text:PDF(635.2KB)

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 949-953
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMTInPInGaAsInAlAslattice-matchedcurrent gain cutoff frequency
 Summary | Full Text:PDF(1.1MB)

Novel Devices for (Sub)millimeter-Wave Space Applications
Jan V. GRAHN Piotr STARSKI Jan STAKE T. Sergey CHEREDNICHENKO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 891-897
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
submillimeterspaceHEMTHBVHEB
 Summary | Full Text:PDF(1.3MB)

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy
Andrea CORRION Christiane POBLENZ Patrick WALTEREIT Tomas PALACIOS Siddharth RAJAN Umesh K. MISHRA Jim S. SPECK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 906-912
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
MBEGallium NitrideHEMTmicrowaveMBE
 Summary | Full Text:PDF(704.5KB)

High Power GaN-HEMT for Wireless Base Station Applications
Toshihide KIKKAWA Kazukiyo JOSHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5 ; pp. 608-615
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaNHEMTbase stationamplifierW-CDMA
 Summary | Full Text:PDF(1.6MB)

Design of Flash Analog-to-Digital Converters Using Resonant-Tunneling Circuits
Yuuki TSUJI Takao WAHO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/11/01
Vol. E87-C  No. 11 ; pp. 1863-1868
Type of Manuscript:  Special Section PAPER (Special Section on New System Paradigms for Integrated Electronics)
Category: 
Keyword: 
resonant-tunneling diodeflash analog-to-digital converterHEMTInPmulti-input gate
 Summary | Full Text:PDF(632KB)

A V-band Monolithic HEMT Amplifier Using Two Types of RF Grounds
Naoko ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 1010-1012
Type of Manuscript:  Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
RF groundHEMTcoplanar waveguideamplifierV-band
 Summary | Full Text:PDF(261.8KB)

Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits
Naoko ONO Ken ONODERA Kazuhiro ARAI Keiichi YAMAGUCHI Hiroyuki YOSHINAGA Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5 ; pp. 733-741
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
K-banddriver amplifierfilter circuitHEMT
 Summary | Full Text:PDF(2.4MB)

Characteristics of GaAs HEMTs with Flip-Chip Interconnections
Naoko ONO Fumio SASAKI Kazuhiro ARAI Hiroyuki YOSHINAGA Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/12/01
Vol. E86-C  No. 12 ; pp. 2452-2461
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology)
Category: Amplifier
Keyword: 
GaAsHEMTflip-chip interconnectioncurrent pathinverted microstrip line
 Summary | Full Text:PDF(1.6MB)

Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Hiroto KITABAYASHI Suehiro SUGITANI Yoshino K. FUKAI Yasuro YAMANE Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2000-2003
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
double-recessInP-passivation layerHEMTbreakdown voltage
 Summary | Full Text:PDF(389.4KB)

Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors
Taiichi OTSUJI Yoshihiro KANAMARU Hajime KITAMURA Mitsuru MATSUOKA Osamu OGAWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1985-1993
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
plasma waveresonanceFETHEMTTerahertzpolaritonharmonic resonance
 Summary | Full Text:PDF(1.1MB)

HEMT: Looking Back at Its Successful Commercialization
Takashi MIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1908-1910
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
high electron mobility transistorHEMTGaAs MESFETradio telescopebroadcasting satellite
 Summary | Full Text:PDF(184.2KB)

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
Masahiro SAKAI Kenta ASANO Subramaniam ARULKUMARAN Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Tomohiko SHIBATA Mitsuhiro TANAKA Osamu ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2071-2076
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNHEMTAlNtemplate
 Summary | Full Text:PDF(690.5KB)

Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops
Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/09/01
Vol. E86-C  No. 9 ; pp. 1879-1885
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
bipolar transistorHBTHEMTdigital circuitpropagation delayflip-flop
 Summary | Full Text:PDF(620.3KB)

Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs
Karol KALNA Asen ASENOV 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 330-335
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
impact ionisationgate tunnelling currentHEMTMonte Carlo device simulations
 Summary | Full Text:PDF(1MB)

V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates
Naoko ONO Keiichi YAMAGUCHI Minoru AMANO Masayuki SUGIURA Yuji ISEKI Eiji TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1528-1534
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
BCBthin-film layerV-bandHEMTMMIC
 Summary | Full Text:PDF(801.2KB)

Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs
Tetsuya SUEMITSU Tetsuyoshi ISHII Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1283-1288
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high-speed devicesmillimeter wave FETsHEMTindium phosphide
 Summary | Full Text:PDF(496.5KB)

A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control
Kazuya NISHIHORI Shigeru WATANABE Fumio SASAKI Kazuhiro ARAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1543-1547
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
microwave and millimeter-wavevariable attenuatorGaAs MMICHEMTbalanced distributed configuration
 Summary | Full Text:PDF(937.4KB)

Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
Takashi MIZUTANI Makoto YAMAMOTO Shigeru KISHIMOTO Koichi MAEZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1318-1322
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
low-frequency noiseHEMTArrhenius plotDX centerLorentz noise
 Summary | Full Text:PDF(379.9KB)

High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs
Akira ENDOH Yoshimi YAMASHITA Masataka HIGASHIWAKI Kohki HIKOSAKA Takashi MIMURA Satoshi HIYAMIZU Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1328-1334
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InAlAs/InGaAsInPHEMTcutoff frequencylow-temperature fabrication process
 Summary | Full Text:PDF(948KB)

RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs
Helmut LEIER Andrei VESCAN Ron DIETRICH Andreas WIESZT Hardy Hans SLEDZIK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1442-1447
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
AlGaN/GaNHFETHEMTmicrowave power
 Summary | Full Text:PDF(662.6KB)

A Compact 40 GHz MMIC Power Amplifier with Improved Power Stage Design
Yasushi SHIZUKI Ken ONODERA Fumio SASAKI Kazuhiro ARAI Hiroyuki YOSHINAGA Juichi OZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1535-1542
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
MMICpower amplifierHEMTmillimeter wavedevice modeling
 Summary | Full Text:PDF(1.1MB)

Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Kenji SHIOJIMA Naoteru SHIGEKAWA Tetsuya SUEMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12 ; pp. 1968-1970
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
GaNHEMTburied p-layercarrier confinement
 Summary | Full Text:PDF(136.1KB)

Low-Voltage, Low-Power, High-Speed 0.25-µm GaAs HEMT Delay Flip-Flops
Tadayoshi ENOMOTO Atsunori HIROBE Masahiro FUJII Nobuhide YOSHIDA Shuji ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/11/25
Vol. E83-C  No. 11 ; pp. 1776-1787
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
GaAsHEMTdelay latchdelay flip-floppower dissipation
 Summary | Full Text:PDF(3.2MB)

10-Gbit/s InP-Based High-Performance Monolithic Photoreceivers Consisting of p-i-n Photodiodes and HEMT's
Kiyoto TAKAHATA Yoshifumi MURAMOTO Kazutoshi KATO Yuji AKATSU Atsuo KOZEN Yuji AKAHORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/06/25
Vol. E83-C  No. 6 ; pp. 950-958
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks)
Category: High-Speed Optical Devices
Keyword: 
integrated optoelectronicsoptical receiverswaveguide p-i-n photodiodesHEMT
 Summary | Full Text:PDF(2.4MB)

GaN-Based FETs for Microwave Power Amplification
Yi-Feng WU Bernd P. KELLER Stacia KELLER Jane J. XU Brian J. THIBEAULT Steven P. DENBAARS Umesh K. MISHRA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1895-1905
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
GaNFETHEMTpower deviceamplifiermicrowave
 Summary | Full Text:PDF(3.2MB)

InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond
Eiichi SANO Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1879-1885
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Information and Communication System
Keyword: 
InPHEMTanalog ICdigital ICpackaging
 Summary | Full Text:PDF(2MB)

Application of 1.55-µm Photonic Technology to Practical Millimeter-Wave Network Analysis
Nabil SAHRI Tadao NAGATSUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7 ; pp. 1307-1311
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Measurements
Keyword: 
millimeter wavenetwork-analyzerelectro-optic samplingHEMT
 Summary | Full Text:PDF(987.8KB)

49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
Yohtaro UMEDA Kazuo OSAFUNE Takatomo ENOKI Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7 ; pp. 1080-1085
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
InPHEMTICinterconnectiondelaystatic frequency divider
 Summary | Full Text:PDF(1.3MB)

60-GHz-Band Monolithic HEMT Amplifiers Using BCB Thin Film Layers on GaAs Substrates
Naoko ONO Yumi FUCHIDA Junko ONOMURA Minoru AMANO Masayuki SUGIURA Kunio YOSHIHARA Eiji TAKAGI Mitsuo KONNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7 ; pp. 1073-1079
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
BCBV-bandHEMTMMICamplifier
 Summary | Full Text:PDF(1.9MB)

Noise Modelling in Linear and Nonlinear Devices
Alain CAPPY Francois DANNEVILLE Gilles DAMBRINE Beaudouin TAMEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 900-907
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
noiseHEMTHBTamplifiermixer
 Summary | Full Text:PDF(578.6KB)

10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices
Toshihiro ITOH Takao WAHO Koichi MAEZAWA Masafumi YAMAMOTO 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 1999/05/25
Vol. E82-D  No. 5 ; pp. 949-954
Type of Manuscript:  Special Section PAPER (Special Issue on Multiple-Valued Logic and Its Applications)
Category: Circuits
Keyword: 
resonant tunneling diodeHEMTmultiple-valued logicnegative differential resistance
 Summary | Full Text:PDF(675.7KB)

Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 409-418
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: 
Keyword: 
InPHEMTICoptical communicationdelay
 Summary | Full Text:PDF(1.3MB)

5 Gsps Oversampling Analog-to-Digital Converters with Polarity Alternating Feedback Comparator
Takumi MIYASHITA Alfredo OLMOS Mizuhisa NIHEI Yuu WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 483-490
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
compound-semiconductorHEMTover-samplingdata-converterA/D converterCDMA
 Summary | Full Text:PDF(743.3KB)

0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications
Naoki HARADA Tamio SAITO Hideyuki OIKAWA Yoji OHASHI Yuji AWANO Masayuki ABE Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 876-881
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
mm-waveMMICHEMTInGaPlow noise amplifier
 Summary | Full Text:PDF(625.7KB)

Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load-Pull Method
Minoru IDA Masashi NAKATSUGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 882-885
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
power amplifierload-pull measurementon-waferMMICHEMT
 Summary | Full Text:PDF(550.1KB)

Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs
Kevin Jing CHEN Koichi MAEZAWA Takao WAHO Masafumi YAMAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1515-1524
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
RTDHEMTnegative differential resistancenegative transconductancequantum functional devices
 Summary | Full Text:PDF(883.1KB)

60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model
Kazuo SHIRAKAWA Yoshihiro KAWASAKI Masahiko SHIMIZU Yoji OHASHI Tamio SAITO Naofumi OKUBO Yashimasa DAIDO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/08/25
Vol. E79-C  No. 8 ; pp. 1144-1151
Type of Manuscript:  PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
HEMTlarge-signalMillimeter-waveoscillatorvirtual common-drain
 Summary | Full Text:PDF(677.4KB)

A Decision Circuit with Phase Detectors for 10-Gb/s Optical Communication Systems
Makoto SHIKATA Akira NISHINO Ryoji SHIGEMASA Tamotsu KIMURA Takashi USHIKUBO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 496-502
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
GaAsHEMTDCFLoptical communicationdecision circuit
 Summary | Full Text:PDF(636.5KB)

A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Naohito YOSHIDA Toshiaki KITANO Yoshitsugu YAMAMOTO Takayuki KATOH Hiroyuki MINAMI Takuo KASHIWA Takuji SONODA Hirozo TAKANO Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1279-1285
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
HEMTAlInAs/InGaAsInPlow-noiseselectiverecess
 Summary | Full Text:PDF(765.5KB)

60-GHz HEMT-Based MMIC One-Chip Receiver
Tamio SAITO Norio HIDAKA Yoji OHASHI Kazuo SHIRAKAWA Yoshihiro KAWASAKI Toshihiro SHIMURA Hideyuki OIKAWA Yoshio AOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1216-1222
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
HEMTMMICmillimeter-wavereceiver
 Summary | Full Text:PDF(731.1KB)

Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
Kazuhiko NAKAHARA Yasushi ITOH Yoshie HORIIE Takeshi SAKURA Naohito YOSHIDA Takayuki KATOH Tadashi TAKAGI Yasuo MITSUI Yasuyuki ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1210-1215
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
amplifierlow noiseMMICmillimeter-waveHEMT
 Summary | Full Text:PDF(863.9KB)

Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
Yuu WATANABE Yasuhiro NAKASHA Kenji IMANISHI Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4 ; pp. 368-373
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
RTDHEMTSRAMnegative differential resistancedigital circuits
 Summary | Full Text:PDF(661.6KB)

Nonalloyed Ohmic Contacts for HEMTs Using n+-lnGaAs Layers Grown by MOVPE
Mizuhisa NIHEI Naoki HARA Haruyoshi SUEHIRO Shigeru KURODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1431-1436
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
nonalloyed ohmic contactn+-InGaAsMOVPEHEMT
 Summary | Full Text:PDF(576.3KB)

Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation
Yasunobu SAITO Fumio SASAKI Hisao KAWASAKI Hiroshi ISHIMURA Hirokuni TOKUDA Motoharu OHTOMO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1379-1383
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
reliabilityHEMTγ-raydegradation
 Summary | Full Text:PDF(391.2KB)

Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances
Yasushi ITOH Tadashi TAKAGI Hiroyuki MASUNO Masaki KOHNO Tsutomu HASHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/25
Vol. E76-C  No. 6 ; pp. 938-943
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
Category: 
Keyword: 
amplifierwidebandhigh powerHEMTbandpass filter
 Summary | Full Text:PDF(545.2KB)

N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching
Naoki HARADA Shigeru KURODA Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1165-1171
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMTInGaAsSchottky junctionDCELdry etching
 Summary | Full Text:PDF(559.3KB)

Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n+-InGaAs/n+-InAlAs Cap Layer
Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/06/25
Vol. E75-C  No. 6 ; pp. 649-655
Type of Manuscript:  Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
InGaAsHEMTlow noiseequivalent circuitInP
 Summary | Full Text:PDF(707.7KB)