Keyword : HEMT


High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Masayuki ABE  Noriaki KOGUSHI  Kian Siong ANG  René HOFSTETTER  Kumar MANOJ  Louis Nicholas RETNAM  Hong WANG  Geok Ing NG  Chon JIN  Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1354-1362
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Seebeck effectheterostructure-thermopileAlGaAs/InGaAsAlGaN/GaNHEMTFPAinfrared image sensor
  Summary |  Full Text:PDF

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
Maiko HATANO  Norimasa YAFUNE  Hirokuni TOKUDA  Yoshiyuki YAMAMOTO  Shin HASHIMOTO  Katsushi AKITA  Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1332-1336
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN channelhigh temperatureHEMT
  Summary |  Full Text:PDF

Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes
Nobuhiko TANAKA  Mitsufumi SAITO  Michihiko SUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 820-825
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
isolatorRTDHEMTunidirectional characteristicsmillimeter wave
  Summary |  Full Text:PDF

DC and RF Performance of AlN/GaN MOS-HEMTs
Sanna TAKING  Douglas MACFARLANE  Ali Z. KHOKHAR  Amir M. DABIRAN  Edward WASIGE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 835-841
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
AlN/GaNHEMTMOS-HEMTAl2O3wet etchingthermal oxidationsmall-signal model
  Summary |  Full Text:PDF

Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Naoteru SHIGEKAWA  Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1212-1217
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
GaNHEMTthreshold voltagepiezoelectric effectsfilm stress
  Summary |  Full Text:PDF

Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method
Takayuki TAKEGISHI  Hisanao WATANABE  Shinsuke HARA  Hiroki I. FUJISHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1258-1265
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
Keyword: 
quantum-corrected Monte CarloHEMTInAsInGaAsdelay timecutoff frequency
  Summary |  Full Text:PDF

The 8th Harmonic Push-Push Oscillator in V Band
Kengo KAWASAKI  Takayuki TANAKA  Masayoshi AIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/07/01
Vol. E93-C  No. 7  pp. 1000-1006
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
Push-Push oscillatorHEMTmillimeter-wave oscillator
  Summary |  Full Text:PDF

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Hironari CHIKAOKA  Yoichi TAKAKUWA  Kenji SHIOJIMA  Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 691-695
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GaNHEMTpotential barriercontact resistancetunneling current density
  Summary |  Full Text:PDF

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Masafumi ITO  Shigeru KISHIMOTO  Fumihiko NAKAMURA  Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 989-993
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
normally-offAlGaN/GaNHEMTInGaN cap
  Summary |  Full Text:PDF

Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors
Michihiko SUHARA  Eri UEKI  Tsugunori OKUMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1070-1075
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Emerging Devices
Keyword: 
gyratoractive inductorsresonant tunneling diodeHEMTmillimeter wave
  Summary |  Full Text:PDF

A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
Koichi MAEZAWA  Ikuo SOGA  Shigeru KISHIMOTO  Takashi MIZUTANI  Kazuhiro AKAMATSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1025-1030
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Novel Integration Technology
Keyword: 
heterogeneous integrationfluidic self-assemblyHEMTSPDT switchSOI
  Summary |  Full Text:PDF

A Design of HEMT Comparators for Ultrahigh-Speed A/D Conversion
Hiroshi WATANABE  Shunsuke NAKAMURA  Takao WAHO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 688-692
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
comparatorD-latchHEMTanalog-to-digital converter
  Summary |  Full Text:PDF

InP HEMT Technology for High-Speed Logic and Communications
Tetsuya SUEMITSU  Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 917-922
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
HEMTInPcutoff frequencyOEIC
  Summary |  Full Text:PDF

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Yong CAI  Yugang ZHOU  Kei May LAU  Kevin J. CHEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1025-1030
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
enhancement modeAlGaN/GaNHEMTfluorideplasma treatmentthreshold voltage
  Summary |  Full Text:PDF

Novel Devices for (Sub)millimeter-Wave Space Applications
Jan V. GRAHN  Piotr STARSKI  Jan STAKE  T. Sergey CHEREDNICHENKO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 891-897
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: INVITED
Keyword: 
submillimeterspaceHEMTHBVHEB
  Summary |  Full Text:PDF

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy
Andrea CORRION  Christiane POBLENZ  Patrick WALTEREIT  Tomas PALACIOS  Siddharth RAJAN  Umesh K. MISHRA  Jim S. SPECK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 906-912
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: INVITED
Keyword: 
MBEGallium NitrideHEMTmicrowaveMBE
  Summary |  Full Text:PDF

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI  Takashi MARUYAMA  Takatomo ENOKI  Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 949-953
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMTInPInGaAsInAlAslattice-matchedcurrent gain cutoff frequency
  Summary |  Full Text:PDF

Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer
Mitsuhiro HANABE  Takuya NISHIMURA  Masaki MIYAMOTO  Taiichi OTSUJI  Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 985-992
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
plasmon resonancephotomixerterahertzgratingHEMT
  Summary |  Full Text:PDF

Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
Oktay YILMAZOGLU  Kabula MUTAMBA  Dimitris PAVLIDIS  Marie Rose MBARGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1037-1041
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaNpressure sensorHEMTSchottky diode
  Summary |  Full Text:PDF

High Power GaN-HEMT for Wireless Base Station Applications
Toshihide KIKKAWA  Kazukiyo JOSHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5  pp. 608-615
Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaNHEMTbase stationamplifierW-CDMA
  Summary |  Full Text:PDF

Design of Flash Analog-to-Digital Converters Using Resonant-Tunneling Circuits
Yuuki TSUJI  Takao WAHO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/11/01
Vol. E87-C  No. 11  pp. 1863-1868
Type of Manuscript: Special Section PAPER (Special Section on New System Paradigms for Integrated Electronics)
Category: 
Keyword: 
resonant-tunneling diodeflash analog-to-digital converterHEMTInPmulti-input gate
  Summary |  Full Text:PDF

A V-band Monolithic HEMT Amplifier Using Two Types of RF Grounds
Naoko ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6  pp. 1010-1012
Type of Manuscript: Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
RF groundHEMTcoplanar waveguideamplifierV-band
  Summary |  Full Text:PDF

Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits
Naoko ONO  Ken ONODERA  Kazuhiro ARAI  Keiichi YAMAGUCHI  Hiroyuki YOSHINAGA  Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5  pp. 733-741
Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
K-banddriver amplifierfilter circuitHEMT
  Summary |  Full Text:PDF

Characteristics of GaAs HEMTs with Flip-Chip Interconnections
Naoko ONO  Fumio SASAKI  Kazuhiro ARAI  Hiroyuki YOSHINAGA  Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/12/01
Vol. E86-C  No. 12  pp. 2452-2461
Type of Manuscript: Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology)
Category: Amplifier
Keyword: 
GaAsHEMTflip-chip interconnectioncurrent pathinverted microstrip line
  Summary |  Full Text:PDF

HEMT: Looking Back at Its Successful Commercialization
Takashi MIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1908-1910
Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
high electron mobility transistorHEMTGaAs MESFETradio telescopebroadcasting satellite
  Summary |  Full Text:PDF

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
Masahiro SAKAI  Kenta ASANO  Subramaniam ARULKUMARAN  Hiroyasu ISHIKAWA  Takashi EGAWA  Takashi JIMBO  Tomohiko SHIBATA  Mitsuhiro TANAKA  Osamu ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2071-2076
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNHEMTAlNtemplate
  Summary |  Full Text:PDF

Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Hiroto KITABAYASHI  Suehiro SUGITANI  Yoshino K. FUKAI  Yasuro YAMANE  Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2000-2003
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
double-recessInP-passivation layerHEMTbreakdown voltage
  Summary |  Full Text:PDF

Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors
Taiichi OTSUJI  Yoshihiro KANAMARU  Hajime KITAMURA  Mitsuru MATSUOKA  Osamu OGAWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1985-1993
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
plasma waveresonanceFETHEMTTerahertzpolaritonharmonic resonance
  Summary |  Full Text:PDF

Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops
Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/09/01
Vol. E86-C  No. 9  pp. 1879-1885
Type of Manuscript: PAPER
Category: Electronic Circuits
Keyword: 
bipolar transistorHBTHEMTdigital circuitpropagation delayflip-flop
  Summary |  Full Text:PDF

Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs
Karol KALNA  Asen ASENOV 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 330-335
Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
impact ionisationgate tunnelling currentHEMTMonte Carlo device simulations
  Summary |  Full Text:PDF

A Compact 40 GHz MMIC Power Amplifier with Improved Power Stage Design
Yasushi SHIZUKI  Ken ONODERA  Fumio SASAKI  Kazuhiro ARAI  Hiroyuki YOSHINAGA  Juichi OZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1535-1542
Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
MMICpower amplifierHEMTmillimeter wavedevice modeling
  Summary |  Full Text:PDF

V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates
Naoko ONO  Keiichi YAMAGUCHI  Minoru AMANO  Masayuki SUGIURA  Yuji ISEKI  Eiji TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1528-1534
Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
BCBthin-film layerV-bandHEMTMMIC
  Summary |  Full Text:PDF

RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs
Helmut LEIER  Andrei VESCAN  Ron DIETRICH  Andreas WIESZT  Hardy Hans SLEDZIK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1442-1447
Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
AlGaN/GaNHFETHEMTmicrowave power
  Summary |  Full Text:PDF

High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs
Akira ENDOH  Yoshimi YAMASHITA  Masataka HIGASHIWAKI  Kohki HIKOSAKA  Takashi MIMURA  Satoshi HIYAMIZU  Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1328-1334
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InAlAs/InGaAsInPHEMTcutoff frequencylow-temperature fabrication process
  Summary |  Full Text:PDF

Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
Takashi MIZUTANI  Makoto YAMAMOTO  Shigeru KISHIMOTO  Koichi MAEZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1318-1322
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
low-frequency noiseHEMTArrhenius plotDX centerLorentz noise
  Summary |  Full Text:PDF

Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs
Tetsuya SUEMITSU  Tetsuyoshi ISHII  Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1283-1288
Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high-speed devicesmillimeter wave FETsHEMTindium phosphide
  Summary |  Full Text:PDF

A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control
Kazuya NISHIHORI  Shigeru WATANABE  Fumio SASAKI  Kazuhiro ARAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1543-1547
Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
microwave and millimeter-wavevariable attenuatorGaAs MMICHEMTbalanced distributed configuration
  Summary |  Full Text:PDF

Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Kenji SHIOJIMA  Naoteru SHIGEKAWA  Tetsuya SUEMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/20
Vol. E83-C  No. 12  pp. 1968-1970
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
Keyword: 
GaNHEMTburied p-layercarrier confinement
  Summary |  Full Text:PDF

Low-Voltage, Low-Power, High-Speed 0.25-µm GaAs HEMT Delay Flip-Flops
Tadayoshi ENOMOTO  Atsunori HIROBE  Masahiro FUJII  Nobuhide YOSHIDA  Shuji ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/11/20
Vol. E83-C  No. 11  pp. 1776-1787
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
GaAsHEMTdelay latchdelay flip-floppower dissipation
  Summary |  Full Text:PDF

10-Gbit/s InP-Based High-Performance Monolithic Photoreceivers Consisting of p-i-n Photodiodes and HEMT's
Kiyoto TAKAHATA  Yoshifumi MURAMOTO  Kazutoshi KATO  Yuji AKATSU  Atsuo KOZEN  Yuji AKAHORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/06/20
Vol. E83-C  No. 6  pp. 950-958
Type of Manuscript: Special Section PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks)
Category: High-Speed Optical Devices
Keyword: 
integrated optoelectronicsoptical receiverswaveguide p-i-n photodiodesHEMT
  Summary |  Full Text:PDF

InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond
Eiichi SANO  Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1879-1885
Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Information and Communication System
Keyword: 
InPHEMTanalog ICdigital ICpackaging
  Summary |  Full Text:PDF

GaN-Based FETs for Microwave Power Amplification
Yi-Feng WU  Bernd P. KELLER  Stacia KELLER  Jane J. XU  Brian J. THIBEAULT  Steven P. DENBAARS  Umesh K. MISHRA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1895-1905
Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
GaNFETHEMTpower deviceamplifiermicrowave
  Summary |  Full Text:PDF

60-GHz-Band Monolithic HEMT Amplifiers Using BCB Thin Film Layers on GaAs Substrates
Naoko ONO  Yumi FUCHIDA  Junko ONOMURA  Minoru AMANO  Masayuki SUGIURA  Kunio YOSHIHARA  Eiji TAKAGI  Mitsuo KONNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/20
Vol. E82-C  No. 7  pp. 1073-1079
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
BCBV-bandHEMTMMICamplifier
  Summary |  Full Text:PDF

Application of 1.55-µm Photonic Technology to Practical Millimeter-Wave Network Analysis
Nabil SAHRI  Tadao NAGATSUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/20
Vol. E82-C  No. 7  pp. 1307-1311
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Measurements
Keyword: 
millimeter wavenetwork-analyzerelectro-optic samplingHEMT
  Summary |  Full Text:PDF

49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
Yohtaro UMEDA  Kazuo OSAFUNE  Takatomo ENOKI  Haruki YOKOYAMA  Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/20
Vol. E82-C  No. 7  pp. 1080-1085
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
InPHEMTICinterconnectiondelaystatic frequency divider
  Summary |  Full Text:PDF

Noise Modelling in Linear and Nonlinear Devices
Alain CAPPY  Francois DANNEVILLE  Gilles DAMBRINE  Beaudouin TAMEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/20
Vol. E82-C  No. 6  pp. 900-907
Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
noiseHEMTHBTamplifiermixer
  Summary |  Full Text:PDF

10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices
Toshihiro ITOH  Takao WAHO  Koichi MAEZAWA  Masafumi YAMAMOTO 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 1999/05/20
Vol. E82-D  No. 5  pp. 949-954
Type of Manuscript: Special Section PAPER (Special Issue on Multiple-Valued Logic and Its Applications)
Category: Circuits
Keyword: 
resonant tunneling diodeHEMTmultiple-valued logicnegative differential resistance
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5 Gsps Oversampling Analog-to-Digital Converters with Polarity Alternating Feedback Comparator
Takumi MIYASHITA  Alfredo OLMOS  Mizuhisa NIHEI  Yuu WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/20
Vol. E82-C  No. 3  pp. 483-490
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
compound-semiconductorHEMTover-samplingdata-converterA/D converterCDMA
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Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA  Takatomo ENOKI  Taiichi OTSUJI  Tetsuya SUEMITSU  Haruki YOKOYAMA  Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/20
Vol. E82-C  No. 3  pp. 409-418
Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: 
Keyword: 
InPHEMTICoptical communicationdelay
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Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load-Pull Method
Minoru IDA  Masashi NAKATSUGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/20
Vol. E81-C  No. 6  pp. 882-885
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
power amplifierload-pull measurementon-waferMMICHEMT
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0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications
Naoki HARADA  Tamio SAITO  Hideyuki OIKAWA  Yoji OHASHI  Yuji AWANO  Masayuki ABE  Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/20
Vol. E81-C  No. 6  pp. 876-881
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
mm-waveMMICHEMTInGaPlow noise amplifier
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Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs
Kevin Jing CHEN  Koichi MAEZAWA  Takao WAHO  Masafumi YAMAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/20
Vol. E79-C  No. 11  pp. 1515-1524
Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
RTDHEMTnegative differential resistancenegative transconductancequantum functional devices
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60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model
Kazuo SHIRAKAWA  Yoshihiro KAWASAKI  Masahiko SHIMIZU  Yoji OHASHI  Tamio SAITO  Naofumi OKUBO  Yashimasa DAIDO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/08/20
Vol. E79-C  No. 8  pp. 1144-1151
Type of Manuscript: PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
HEMTlarge-signalMillimeter-waveoscillatorvirtual common-drain
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A Decision Circuit with Phase Detectors for 10-Gb/s Optical Communication Systems
Makoto SHIKATA  Akira NISHINO  Ryoji SHIGEMASA  Tamotsu KIMURA  Takashi USHIKUBO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/20
Vol. E79-C  No. 4  pp. 496-502
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
GaAsHEMTDCFLoptical communicationdecision circuit
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A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Naohito YOSHIDA  Toshiaki KITANO  Yoshitsugu YAMAMOTO  Takayuki KATOH  Hiroyuki MINAMI  Takuo KASHIWA  Takuji SONODA  Hirozo TAKANO  Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/20
Vol. E78-C  No. 9  pp. 1279-1285
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
HEMTAlInAs/InGaAsInPlow-noiseselectiverecess
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60-GHz HEMT-Based MMIC One-Chip Receiver
Tamio SAITO  Norio HIDAKA  Yoji OHASHI  Kazuo SHIRAKAWA  Yoshihiro KAWASAKI  Toshihiro SHIMURA  Hideyuki OIKAWA  Yoshio AOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/20
Vol. E78-C  No. 9  pp. 1216-1222
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
HEMTMMICmillimeter-wavereceiver
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Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
Kazuhiko NAKAHARA  Yasushi ITOH  Yoshie HORIIE  Takeshi SAKURA  Naohito YOSHIDA  Takayuki KATOH  Tadashi TAKAGI  Yasuo MITSUI  Yasuyuki ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/20
Vol. E78-C  No. 9  pp. 1210-1215
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
amplifierlow noiseMMICmillimeter-waveHEMT
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Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
Yuu WATANABE  Yasuhiro NAKASHA  Kenji IMANISHI  Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/20
Vol. E78-C  No. 4  pp. 368-373
Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
RTDHEMTSRAMnegative differential resistancedigital circuits
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Nonalloyed Ohmic Contacts for HEMTs Using n+-lnGaAs Layers Grown by MOVPE
Mizuhisa NIHEI  Naoki HARA  Haruyoshi SUEHIRO  Shigeru KURODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/20
Vol. E77-C  No. 9  pp. 1431-1436
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
nonalloyed ohmic contactn+-InGaAsMOVPEHEMT
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Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation
Yasunobu SAITO  Fumio SASAKI  Hisao KAWASAKI  Hiroshi ISHIMURA  Hirokuni TOKUDA  Motoharu OHTOMO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/20
Vol. E76-C  No. 9  pp. 1379-1383
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
reliabilityHEMTγ-raydegradation
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Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances
Yasushi ITOH  Tadashi TAKAGI  Hiroyuki MASUNO  Masaki KOHNO  Tsutomu HASHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/20
Vol. E76-C  No. 6  pp. 938-943
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
Category: 
Keyword: 
amplifierwidebandhigh powerHEMTbandpass filter
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N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching
Naoki HARADA  Shigeru KURODA  Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/20
Vol. E75-C  No. 10  pp. 1165-1171
Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMTInGaAsSchottky junctionDCELdry etching
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Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n+-InGaAs/n+-InAlAs Cap Layer
Yohtaro UMEDA  Takatomo ENOKI  Kunihiro ARAI  Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/06/20
Vol. E75-C  No. 6  pp. 649-655
Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
InGaAsHEMTlow noiseequivalent circuitInP
  Summary |  Full Text:PDF