IEICE SEARCH SYSTEM

Keyword : HBT

Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 pp. 1310-1316 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: III-V High-Speed Devices and Circuits Keyword: InP, InGaAs, HBT, turn-on voltage,
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Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit Ryo ISHIKAWA Junichi KIMURA Yukio TAKAHASHI Kazuhiko HONJO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/07/01 Vol. E93-C No. 7 pp. 958-965 Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies) Category: Keyword: thermal memory effect, IMD, distortion compensation, self heating, power amplifiers, HBT,
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Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector Yasuyuki MIYAMOTO Shinnosuke TAKAHASHI Takashi KOBAYASHI Hiroyuki SUZUKI Kazuhito FURUYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 644-647 Type of Manuscript: BRIEF PAPER Category: Compound Semiconductor Devices Keyword: InGaAs/InP, HBT, Kirk effect, current spreading,
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An Optical Transimpedance Amplifier Using an Inductive Buffer Stage Technique Sang Hyun PARK Quan LE Bo-Hun CHOI
Publication: IEICE TRANSACTIONS on Communications Publication Date: 2009/06/01 Vol. E92-B No. 6 pp. 2239-2242 Type of Manuscript: LETTER Category: Devices/Circuits for Communications Keyword: transimpedance amplifier, optical communications, HBT, gain,
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Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio Dong-Shong LIANG Kwang-Jow GAN Cheng-Chi TAI Cher-Shiung TSAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 635-638 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: negative differential resistance (NDR), MOS, HBT, BiCMOS,
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Large Signal Evaluation of Nonlinear HBT Model Iltcho ANGELOV Akira INOUE Shinsuke WATANABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 1091-1097 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: GaAs- and InP-Based Devices Keyword: HBT, large signal model, bipolar transistor models, nonlinear circuits,
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InGaP/GaAs HBT MMIC Amplifier with Active Balun for Ultra-Wideband Self-Complementary Antenna Itaru NAKAGAWA Ryo ISHIKAWA Kazuhiko HONJO Masao SHIMADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/12/01 Vol. E89-C No. 12 pp. 1814-1820 Type of Manuscript: Special Section PAPER (Special Section on Emerging Microwave Techniques) Category: Active Circuits/Devices/Monolithic Microwave Integrated Circuits Keyword: broadband amplifier, UWB, active balun, HBT, microwave, self-complementary antenna,
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Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect Che-ming WANG Kuang-Po HSUEH Yue-ming HSIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/08/01 Vol. E88-C No. 8 pp. 1790-1792 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: HBT, Kirk effect, collector doping,
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A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology Tzung-Han WU Chinchun MENG Tse-Hung WU Guo-Wei HUANG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/06/01 Vol. E88-C No. 6 pp. 1267-1270 Type of Manuscript: Special Section LETTER (Special Section on Analog Circuit and Device Technologies) Category: RF Keyword: SiGe, HBT, Gilbert mixer,
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Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers Takaki NIWA Takashi ISHIGAKI Naoto KUROSAWA Hidenori SHIMAWAKI Shinichi TANAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 672-677 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: HBT, gallium arsenide, ruggedness, breakdown voltage, linearity, composite collector, WCDMA,
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Lateral and Vertical Scaling of High-f_max InP-Based HBTs Shinichi TANAKA Yoshifumi IKENAGA Akira FUJIHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/06/01 Vol. E87-C No. 6 pp. 924-928 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies) Category: Keyword: HBT, indium phosphide (InP), maximum frequency of oscillation, scaling,
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The Maximum Operating Region in SiGe HBTs for RF Power Amplifiers Akira INOUE Shigenori NAKATSUKA Takahide ISHIKAWA Yoshio MATSUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/05/01 Vol. E87-C No. 5 pp. 714-719 Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits) Category: Active Devices and Circuits Keyword: maximum operating region, measurement, waveform, SiGe, power amplifier, HBT,
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Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure Naohiro TSURUMI Motonori ISHII Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA Daisuke UEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 2004-2009 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: HBT, InGaP, GaAs, ledge, capacitor, base resistance, recombination,
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HFET and HBT Modelling for Circuit Analysis Iltcho ANGELOV
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 1968-1976 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: FET, HBT, models,
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Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops Eiichi SANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/09/01 Vol. E86-C No. 9 pp. 1879-1885 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: bipolar transistor, HBT, HEMT, digital circuit, propagation delay, flip-flop,
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Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers Akira INOUE Shigenori NAKATSUKA Satoshi SUZUKI Kazuya YAMAMOTO Teruyuki SHIMURA Ryo HATTORI Yasuo MITSUI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/08/01 Vol. E86-C No. 8 pp. 1451-1457 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Keyword: maximum operating region, measurement, waveform, power amplifier, HBT,
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Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications Hideki KAMITSUNA Tsugumichi SHIBATA Kenji KURISHIMA Minoru IDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/07/01 Vol. E86-C No. 7 pp. 1290-1298 Type of Manuscript: INVITED PAPER (Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies) Category: MWP Devices Keyword: HPT, HBT, optically injection-locked oscillator, microwave photonics, millimeter wave, optical fiber communication,
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MMIC Power Amplifier Applications of Heterojunction Bipolar Transistors (HBTs) Pei-Der TSENG Liyang ZHANG Mau-Chung Frank CHANG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1408-1413 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: SiGe HBTs & FETs Keyword: SiGe, GaAs, HBT, power amplifier, MMIC,
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Reliability of InGaP and AlGaAs HBT Noren PAN Roger E. WELSER Kevin S. STEVENS Charles R. LUTZ
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1366-1372 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: III-V HBTs Keyword: HBT, MOCVD, reliability, microwave devices,
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HBT Collector Characterization by the Spectral Photocurrent Technique Fritz SCHUERMEYER Peter J. ZAMPARDI Sharon FITZSIMMONS Roger E. WELSER Noren PAN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1383-1388 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: III-V HBTs Keyword: photoluminescence, HBT, GaAs, AlGaAs, InGaP,
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InP DHBT with 0.5 µ m Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter Toshiki ARAI Shigeharu YAMAGAMI Yoshifumi OKUDA Yoshimichi HARADA Yasuyuki MIYAMOTO Kazuhito FURUYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1394-1398 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: III-V HBTs Keyword: InP, HBT, narrow emitter,
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Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile Christoph JUNGEMANN Stefan KEITH Bernd MEINERZHAGEN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/20 Vol. E83-C No. 8 pp. 1228-1234 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Device Modeling and Simulation Keyword: silicon-germanium, full-band Monte Carlo, HBT,
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High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors Eiichi SANO Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/20 Vol. E82-C No. 11 pp. 2000-2006 Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Low Power-Consumption RF ICs Keyword: InP, HBT, amplifier, flip-flop, PLL,
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Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors Noren PAN Roger E. WELSER Charles R. LUTZ James ELLIOT Jesse P. RODRIGUES
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/20 Vol. E82-C No. 11 pp. 1886-1894 Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: RF Power Devices Keyword: HBT, InGaP/GaAs HBTs, AlGaAs/GaAs HBTs, MOCVD, reliability, microwave devices,
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Noise Modelling in Linear and Nonlinear Devices Alain CAPPY Francois DANNEVILLE Gilles DAMBRINE Beaudouin TAMEN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/20 Vol. E82-C No. 6 pp. 900-907 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: noise, HEMT, HBT, amplifier, mixer,
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High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs Hiroshi MASUDA Kiyoshi OUCHI Akihisa TERANO Hideyuki SUZUKI Koichi WATANABE Tohru OKA Hirokazu MATSUBARA Tomonori TANOUE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/20 Vol. E82-C No. 3 pp. 419-427 Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Keyword: InP/InGaAs, HBT, T-shaped emitter electrode, gas-source MBE, Pt-based metal, InP subcollector, thermal runaway, static 1/2 frequency divider,
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Development of K-Band Front-End Devices for Broadband Wireless Communication Systems Using Millimeter-Wave Flip-Chip IC Technology Kazuaki TAKAHASHI Suguru FUJITA Hiroyuki YABUKI Takayuki YOSHIDA Yoshito IKEDA Hiroyuki SAKAI Morikazu SAGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/20 Vol. E81-C No. 6 pp. 827-833 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Functional Modules and the Design Technology Keyword: flip-chip, micro bump bonding, millimeter-wave, HFET, HBT,
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High Speed Monolithically Integrated p-i-n/HBT Photoreceivers Kao-Chih SYAO Augusto L. Gutierrez-AITKEN Kyounghoon YANG Xiangkun ZHANG George I. HADDAD Pallab K. BHATTACHARYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/05/20 Vol. E80-C No. 5 pp. 695-702 Type of Manuscript: Special Section PAPER (Special Issue on Photonic Integrated Circuits) Category: Optoelectronic Integrated Receivers Keyword: photoreceiver, array, crosstalk, sensitivity, HBT,
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Track/Hold Circuit in GaAs HBT Process Tsutomu TOBARI Haruo KOBAYASHI Kenji UCHIDA Hiroyuki MATSUURA Mineo YAMANAKA Shinji KOBAYASHI Tadashige FUJITA Akira MIURA
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 1997/03/20 Vol. E80-A No. 3 pp. 454-460 Type of Manuscript: Special Section PAPER (Special Section of Selected Papers from the 9th Karuizawa Workshop on Circuits and Systems) Category: Keyword: track-hold, sample-hold, analog-to-digital converter, HBT, GaAs,
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Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency Atsushi KAMEYAMA Alan MASSENGALE Changhong DAI James S. HARRIS, Jr.
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/20 Vol. E79-C No. 4 pp. 518-523 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: HBT, Pnp, AlGaAs/GaAs, complementary circuit, graded base,
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Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/20 Vol. E78-C No. 9 pp. 1171-1181 Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: HBT, MOVPE, Zn diffusion, abrupt emitter, graded base, hot electron injection, nonequilibrium transport, current blocking effect, lateral down-scaling, emitter size effect,
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Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers Eiichi SANO Yutaka MATSUOKA Tadao ISHIBASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/20 Vol. E78-C No. 9 pp. 1182-1188 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: high-speed IC, amplifier, flip-flop, HBT, MESFET, optical communication,
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High F_max AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au Base Contacts for DC to 40 GHz Broadband Amplifiers Tohru SUGIYAMA Yasuhiko KURIYAMA Norio IIZUKA Kunio TSUDA Kouhei MORIZUKA Masao OBARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/08/20 Vol. E78-C No. 8 pp. 944-948 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology) Category: Keyword: semiconductor materials and devices, HBT, amplifier, base metal,
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Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors Hiroki NAKAJIMA Kenji KURISHIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/02/20 Vol. E78-C No. 2 pp. 186-192 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: InP, InGaAs, HBT, high-speed, low-power,
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AlGaAs/GaAs Heterojunction Bipolar Transistor ICs for Optical Transmission Systems Nobuo NAGANO Tetsuyuki SUZAKI Masaaki SODA Kensuke KASAHARA Kazuhiko HONJO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/06/20 Vol. E76-C No. 6 pp. 883-890 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions) Category: Keyword: electronic circuits, optical transmission, HBT, gallium arsenide, uniformities,
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A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters Jun-ichi SHIMIZU Nobuyuki HAYAMA Kazuhiko HONJO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/01/20 Vol. E76-C No. 1 pp. 159-162 Type of Manuscript: LETTER Category: Electronic Circuits Keyword: HBT, large-signal, S-parameter, noise parameters, small-signal,
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A 34.8 GHz 1/4 Static Frequency Divider Using AlGaAs/GaAs HBTs Yoshiki YAMAUCHI Osaake NAKAJIMA Koichi NAGATA Hiroshi ITO Tadao ISHIBASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/10/20 Vol. E75-C No. 10 pp. 1105-1109 Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits) Category: Keyword: HBT, GaAsIC, AlGaAs/GaAs, frequency divider,
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A 1-K ECL Gate Array Implemented with Fully Self-Aligned AlGaAs/GaAs Heterojunction Bipolar Transistors Nobuyuki HAYAMA Yuzuru TOMONOH Hideki TAKAHASHI Kazuhiko HONJO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/10/20 Vol. E75-C No. 10 pp. 1121-1126 Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits) Category: Keyword: HBT, gate array, ring oscillator, propagation delay time,
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Large-Signal Parameter Modeling for AlGaAs/GaAs HBT and Its Application to a Monolithic 22 GHz-Band Oscillator Nobuyuki HAYAMA Jun-ichi SHIMIZU Kazuhiko HONJO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/06/20 Vol. E75-C No. 6 pp. 683-688 Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology) Category: Keyword: HBT, oscillator, 1/f noise, phase noise,
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