IEICE SEARCH SYSTEM

Keyword : GaAs

A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator Kiyoyuki IHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/02/01 Vol. E96-C No. 2 pp. 245-250 Type of Manuscript: PAPER Category: Microwaves, Millimeter-Waves Keyword: IQ modulator, EVM, direct conversion, GaAs, pHEMT, ACPR, temperature drift, distortion,
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An Analysis of Multi-Layer Inductors for Miniaturizing of GaAs MMIC Yo YAMAGUCHI Takana KAHO Motoharu SASAKI Kenjiro NISHIKAWA Tomohiro SEKI Tadao NAKAGAWA Kazuhiro UEHARA Kiyomichi ARAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/07/01 Vol. E93-C No. 7 pp. 1119-1125 Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies) Category: Keyword: multi-layer inductor, stacked inductor, three-dimensional MMIC, GaAs,
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Design and Fabrication of Planar GaAs Gunn Diodes Mi-Ra KIM Seong-Dae LEE Yeon-Sik CHAE Jin-Koo RHEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 693-698 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: GaAs, Gunn diode, graded-gap injector, negative resistance,
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High Moisture Resistant and Reliable Gate Structure Design in High Power pHEMTs for Millimeter-Wave Applications Hirotaka AMASUGA Toshihiko SHIGA Masahiro TOTSUKA Seiki GOTO Akira INOUE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 676-682 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: millimeter-wave, GaAs, pHEMT, humidity, power density, breakdown voltage,
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The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC Kiyoyuki IHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/03/01 Vol. E91-C No. 3 pp. 366-372 Type of Manuscript: PAPER Category: Microwaves, Millimeter-Waves Keyword: IQ modulator, temperature dependence, EVM, direct conversion, GaAs, pHEMT,
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Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs Hiroyuki SHINOJIMA Ryuzi YANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/01/01 Vol. E90-C No. 1 pp. 46-50 Type of Manuscript: Special Section PAPER (Special Section on Microoptomechatronics) Category: Micro/Nano Fabrication Keyword: As ion implantation, GaAs, defect, annealing, V_Ga vacancy assisted diffusion, pseudoactivation energy,
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Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 943-948 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: High-Speed HBTs and ICs Keyword: heterojunction bipolar transistor, reliability, rapid thermal annealing, GaAs, InGaP,
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Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique Masahiro NAKAYAMA Shinichi NARITA Hiroki I. FUJISHIRO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/07/01 Vol. E88-C No. 7 pp. 1509-1515 Type of Manuscript: PAPER Category: Microwaves, Millimeter-Waves Keyword: Monte Carlo, GaAs, MESFET, noise figure, noise generation, electron velocity,
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Characteristics of GaAs HEMTs with Flip-Chip Interconnections Naoko ONO Fumio SASAKI Kazuhiro ARAI Hiroyuki YOSHINAGA Yuji ISEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/12/01 Vol. E86-C No. 12 pp. 2452-2461 Type of Manuscript: Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology) Category: Amplifier Keyword: GaAs, HEMT, flip-chip interconnection, current path, inverted microstrip line,
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Highly Stable 6-18 GHz 2.3 dB Low-Noise Amplifier with Resistive-Loaded Series Feedback Circuits Hidenori YUKAWA Yukinobu TARUI Koh KANAYA Hiromitsu UCHIDA Masatoshi NAKAYAMA Yasushi ITOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/12/01 Vol. E86-C No. 12 pp. 2445-2451 Type of Manuscript: Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology) Category: Amplifier Keyword: microwave, amplifier, wideband, low-noise, GaAs,
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Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure Naohiro TSURUMI Motonori ISHII Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA Daisuke UEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 2004-2009 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: HBT, InGaP, GaAs, ledge, capacitor, base resistance, recombination,
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A 4-12 GHz 2 W GaAs HFET Amplifier Using Pre-Matching Circuits for Dual Gate-Bias Feed and Tapered Power Splitting/Combining FETs Hidenori YUKAWA Masatoshi NII Yoshihiro TSUKAHARA Yukio IKEDA Yasushi ITOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/12/01 Vol. E85-C No. 12 pp. 2029-2035 Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology) Category: Keyword: microwave, amplifier, wideband, high power, GaAs,
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Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET Satoshi MAKIOKA Yoshiharu ANDA Daisuke UEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/12/01 Vol. E85-C No. 12 pp. 2036-2040 Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology) Category: Keyword: switch IC, GaAs, multi-gate, EO probe,
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Designs of Building Blocks for High-Speed, Low-Power Processors Tadayoshi ENOMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/02/01 Vol. E85-C No. 2 pp. 331-338 Type of Manuscript: Special Section PAPER (Special Issue on High-Performance and Low-Power Microprocessors) Category: High-Performance Technologies Keyword: register file, cache SRAM, GaAs, power dissipation,
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MMIC Power Amplifier Applications of Heterojunction Bipolar Transistors (HBTs) Pei-Der TSENG Liyang ZHANG Mau-Chung Frank CHANG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1408-1413 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: SiGe HBTs & FETs Keyword: SiGe, GaAs, HBT, power amplifier, MMIC,
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HBT Collector Characterization by the Spectral Photocurrent Technique Fritz SCHUERMEYER Peter J. ZAMPARDI Sharon FITZSIMMONS Roger E. WELSER Noren PAN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1383-1388 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: III-V HBTs Keyword: photoluminescence, HBT, GaAs, AlGaAs, InGaP,
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0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer Yoshiharu ANDA Katsuhiko KAWASHIMA Mitsuru NISHITSUJI Tsuyoshi TANAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1323-1327 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: GaAs, MODFET, BCB, millimeter wave, low-k,
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Hydrogen Degradation of InP HEMTs and GaAs PHEMTs Jesus A. del ALAMO Roxann R. BLANCHARD Samuel D. MERTENS
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1289-1293 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: high-electron mobility transistor, hydrogen, reliability, InP, GaAs,
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Low-Voltage, Low-Power, High-Speed 0.25-µm GaAs HEMT Delay Flip-Flops Tadayoshi ENOMOTO Atsunori HIROBE Masahiro FUJII Nobuhide YOSHIDA Shuji ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/11/20 Vol. E83-C No. 11 pp. 1776-1787 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: GaAs, HEMT, delay latch, delay flip-flop, power dissipation,
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ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8:1 Multiplexer and 1:8 Demultiplexer Nobuhide YOSHIDA Masahiro FUJII Takao ATSUMO Keiichi NUMATA Shuji ASAI Michihisa KOHNO Hirokazu OIKAWA Hiroaki TSUTSUI Tadashi MAEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/20 Vol. E82-C No. 11 pp. 1992-1999 Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Low Power-Consumption RF ICs Keyword: multiplexer, demultiplexer, GaAs, 10 Gb/s, ECL-compatible, low power consumption,
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High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE) Akio WAKEJIMA Yoichi MAKINO Katsumi YAMANOGUCHI Norihiko SAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/20 Vol. E82-C No. 11 pp. 1977-1981 Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Low Power-Consumption RF ICs Keyword: GaAs, HJFET, MMIC, millimeter wave,
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0.21-fJ GaAs DCFL Circuits Using 0.2-µm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs Shigeki WADA Masatoshi TOKUSHIMA Masaoki ISHIKAWA Nobuhide YOSHIDA Masahiro FUJII Tadashi MAEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/20 Vol. E82-C No. 3 pp. 491-497 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Compound Semiconductor Devices Keyword: GaAs, heterojunction FET, Y-shaped gate, DCFL, low supply voltage,
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Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers Kiyomitsu ONODERA Kazumi NISHIMURA Takumi NITTONO Yasuro YAMANE Kimiyoshi YAMASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/20 Vol. E81-C No. 6 pp. 868-875 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Semiconductor Devices and Amplifiers Keyword: GaAs, MESFET, V-band amplifier,
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A High Power and Low Distortion Amplifier Module for Large Cell Base Station in Digital Cordless System Morio NAKAMURA Masahiro MAEDA Shigeru MORIMOTO Hiroyuki MASATO Yukio NAKAMURA Yorito OTA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/20 Vol. E81-C No. 6 pp. 886-891 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Semiconductor Devices and Amplifiers Keyword: GaAs, power module, high power, low distortion, power divider/combiner,
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Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment Junji ITOH Tadayoshi NAKATSUKA Takayuki YOSHIDA Mitsuru NISHITSUJI Tomoya UDA Osamu ISHIKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/20 Vol. E81-C No. 6 pp. 834-840 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Functional Modules and the Design Technology Keyword: mobile communication, front-end, down-converter, GaAs, hybrid IC,
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Low-Voltage Operation GaAs Receiver Front-End IC Junji ITOH Tadayoshi NAKATSUKA Mitsuru NISHITSUJI Tomoya UDA Osamu ISHIKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/12/20 Vol. E80-C No. 12 pp. 1592-1597 Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies) Category: Keyword: mobile communication, front-end, down-converter, GaAs,
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Improved Equivalent Circuit Model of GaAs FET Switch for MMIC Phase Shifter Design Hideki TAKASU Shigeru WATANABE Susumu KAMIHASHI Motoharu OHTOMO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/20 Vol. E80-C No. 6 pp. 812-820 Type of Manuscript: PAPER Category: Microwave and Millimeter Wave Technology Keyword: MMIC, phase shifter, GaAs, switch,
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Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/20 Vol. E80-C No. 6 pp. 794-799 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: GaAs, direct-conversion, attenuator, modulator, MMIC, MESFET, personal handy phone system,
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A Small-Sized 10 W Module for 1.5 GHz Portable DMCA Radios Using New Power Divider/Combiner Masahiro MAEDA Morio NAKAMURA Shigeru MORIMOTO Hiroyuki MASATO Yorito OTA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/20 Vol. E80-C No. 6 pp. 751-756 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: GaAs, power module, high frequency, power divider/combiner, FET, isolation, second-harmonic control, small size, high power, high efficiency, low supply voltage, mobile radio, DMCA,
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Track/Hold Circuit in GaAs HBT Process Tsutomu TOBARI Haruo KOBAYASHI Kenji UCHIDA Hiroyuki MATSUURA Mineo YAMANAKA Shinji KOBAYASHI Tadashige FUJITA Akira MIURA
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 1997/03/20 Vol. E80-A No. 3 pp. 454-460 Type of Manuscript: Special Section PAPER (Special Section of Selected Papers from the 9th Karuizawa Workshop on Circuits and Systems) Category: Keyword: track-hold, sample-hold, analog-to-digital converter, HBT, GaAs,
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Photoluminescence Characteristics of GaAs Nanowhis-kers: Effects of Depletion Potential Kensuke OGAWA Kenji HIRUMA Toshio KATSUYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/20 Vol. E79-C No. 11 pp. 1573-1578 Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: GaAs, whisker, radiative recombination, quantum confinement,
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AFM Characterization of GaAs/AlGaAs Waveguides Kazuhiko HOSOMI Masataka SHIRAI Kenji HIRUMA Junji SHIGETA Toshio KATSUYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/20 Vol. E79-C No. 11 pp. 1579-1585 Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: GaAs, waveguide, scattering, surface roughness,
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GaAs MMIC for 2.4 GHz Wireless LAN Applications Kazuhiko KOBAYASHI Toru MANIWA Yoshio AOKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/05/20 Vol. E79-C No. 5 pp. 705-708 Type of Manuscript: Special Section LETTER (Special Issue on Microwave Devices for Mobile Communications) Category: Active Devices Keyword: GaAs, MMIC, LAN, wireless, spread spectrum, ISM-band,
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An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation Shigeru WATANABE Yuji ODA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/05/20 Vol. E79-C No. 5 pp. 606-610 Type of Manuscript: Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications) Category: Active Devices Keyword: GaAs, FET, microwave, equivalent clrcuit, modeling, simulation,
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1.4 GHz Natural Air-Cooling GaAs Standard Cell LSIs for 10 Gbit/s Optical Communication Systems Yasunori OGAWA Kuniichi IKEMURA Shouhei SEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/20 Vol. E79-C No. 4 pp. 489-495 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: GaAs, DCFL, SDH, standard cell, natural air-cooling,
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GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets Masaaki SHIMADA Norio HIGASHISAKA Akira OHTA Kenji HOSOGI Kazuo KUBO Noriyuki TANINO Tadashi TAKAGI Fuminobu HIDANI Osamu ISHIHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/20 Vol. E79-C No. 4 pp. 503-511 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: multiplexer, demultiplexer, GaAs, 10 Gb/s, SCFL, DCFL,
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A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps Masahiro FUJII Tadashi MAEDA Yasuo OHNO Masatoshi TOKUSHIMA Masaoki ISHIKAWA Muneo FUKAISHI Hikaru HIDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/20 Vol. E79-C No. 4 pp. 512-517 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: low power, high speed, GaAs, heterojunction FET, SCFL, logic swing, low supply voltage, D-FF,
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A Decision Circuit with Phase Detectors for 10-Gb/s Optical Communication Systems Makoto SHIKATA Akira NISHINO Ryoji SHIGEMASA Tamotsu KIMURA Takashi USHIKUBO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/20 Vol. E79-C No. 4 pp. 496-502 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: GaAs, HEMT, DCFL, optical communication, decision circuit,
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A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression Tsuyoshi TANAKA Hideo NAGAI Daisuke UEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/20 Vol. E78-C No. 9 pp. 1246-1251 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: GaAs, one-chip, oscillator, BST, laser diode,
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Low Power Dissipation GaAs DCFL 2.5 Gbps 16-bit Multiplexer/Demultiplexer LSIs Norio HIGASHISAKA Masaaki SHIMADA Akira OHTA Kenji HOSOGI Kazuo KUBO Noriyuki TANINO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/20 Vol. E78-C No. 9 pp. 1195-1202 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: MUX, DEMUX, GaAs, 2.5 Gbps, power,
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A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/08/20 Vol. E78-C No. 8 pp. 907-910 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology) Category: Keyword: WSiN, InGaP, asymmetric LDD structure, GaAs, MMIC,
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A GaAs Single Voltage Controlled RF Switch IC Kazuo MIYATSUJI Daisuke UEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/08/20 Vol. E78-C No. 8 pp. 931-935 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology) Category: Keyword: GaAs, MESFET, switch, BST,
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Fast Atom Beam (FAB) Processing with Separated Masks Masahiro HATAKEYAMA Katsunori ICHIKI Tadasuke KOBATA Masayuki NAKAO Yotaro HATAMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/02/20 Vol. E78-C No. 2 pp. 174-179 Type of Manuscript: Special Section PAPER (Special Issue on Micromachines and Micro Electro Mechanical Systems) Category: Keyword: fast atom beam (FAB), patterned mask, GaAs, 3-D processing, overlapped etching,
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Design of a 3.2 GHz 50 mW 0.5 µm GaAs PLL-Based Clock Generator with 1 V Power Supply Tadayoshi ENOMOTO Toshiyuki OKUYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/12/20 Vol. E77-C No. 12 pp. 1957-1965 Type of Manuscript: Special Section PAPER (Special Issue on Multimedia, Analog and Processing LSIs) Category: Processor Interfaces Keyword: phase-locked loop (PLL), clock pulse generator (CG), voltage controlled ring oscillater (VCO), VCO gain, GaAs, MESFET, DCFL circuit, pull-in frequency, pull-in range, pull-in time, lock range, lock time, locked state,
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Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires Kenji HIRUMA Hisaya MURAKOSHI Masamitsu YAZAWA Kensuke OGAWA Satoru FUKUHARA Masataka SHIRAI Toshio KATSUYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/20 Vol. E77-C No. 9 pp. 1420-1425 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques) Category: Keyword: GaAs, InAs, quantum wire, whisker, STM,
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Selective Growth of GaAs by Pulsed-Jet Epitaxy Yoshiki SAKUMA Shunich MUTO Naoki YOKOYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/20 Vol. E77-C No. 9 pp. 1414-1419 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques) Category: Keyword: selective epitaxy, atomic layer epitaxy (ALE), MOVPE, pulsed-jet epitaxy, GaAs, SiO₂ mask,
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Three-Dimensional Passive Elements for Compact GaAs MMICs Makoto HIRANO Yuhki IMAI Ichihiko TOYODA Kenjiro NISHIKAWA Masami TOKUMITSU Kazuyoshi ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/06/20 Vol. E76-C No. 6 pp. 961-967 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions) Category: Keyword: three-dimensional, passive elements, GaAs, MMICs,
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Integrated Circuits for Ultra-High-Speed Optical Fiber Transmission Systems Kohji HOHKAWA Shinji MATSUOKA Kazuo HAGIMOTO Kiyoshi NAKAGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/01/20 Vol. E76-C No. 1 pp. 68-77 Type of Manuscript: INVITED PAPER (Special Issue on Opto-Electronics and LSI) Category: LSI Technology for Opto-Electronics Keyword: optical fiber, transmission system, LSI, GaAs, Si,
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A GaAs 88 Self-Routing Switch LSI for ATM Switching System Shouhei SEKI Hiroyuki YAMADA Masanori TSUNOTANI Yoshiaki SANO Yasushi KAWAKAMI Masahiro AKIYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/10/20 Vol. E75-C No. 10 pp. 1127-1132 Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits) Category: Keyword: GaAs, B-ISDN, ATM, hardware switch,
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