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Keyword : FeRAM

A Genuine Power-Gatable Reconfigurable Logic Chip with FeRAM Cells Masahiro IIDA Masahiro KOGA Kazuki INOUE Motoki AMAGASAKI Yoshinobu ICHIDA Mitsuro SAJI Jun IIDA Toshinori SUEYOSHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/04/01 Vol. E94-C No. 4 pp. 548-556 Type of Manuscript: Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration) Category: Keyword: reconfigurable logic, FeRAM, power-gating, non-volatile flip-flop, NV-FF, VGLC,
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A Reliable 1T1C FeRAM Using a Thermal History Tracking 2T2C Dual Reference Level Technique for a Smart Card Application Chip Shoichiro KAWASHIMA Isao FUKUSHI Keizo MORITA Ken-ichi NAKABAYASHI Mitsuharu NAKAZAWA Kazuaki YAMANE Tomohisa HIRAYAMA Toru ENDO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/10/01 Vol. E90-C No. 10 pp. 1941-1948 Type of Manuscript: Special Section PAPER (Special Section on VLSI Technology toward Frontiers of New Market) Category: Next-Generation Memory for SoC Keyword: FeRAM, BGS, 2T2C-reference, FIP, self-timing, ECC, Smart Card,
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A 2-Mb 1T1C FeRAM Prototype Based on PMOS-Gating Cell Structure Yeonbae CHUNG Jung-Hyun KIM Jae-Eun YOON
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/10/01 Vol. E87-C No. 10 pp. 1686-1693 Type of Manuscript: Special Section PAPER (Special Section on New Era of Nonvolatile Memories) Category: Ferroelectric Memory Keyword: FeRAM, memory, nonvolatile, ferroelectrics,
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Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O₃ Films Fabricated Using Low-Pressure Consolidation Process Takaaki MIYASAKO Masaru SENOO Eisuke TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/10/01 Vol. E87-C No. 10 pp. 1694-1699 Type of Manuscript: Special Section PAPER (Special Section on New Era of Nonvolatile Memories) Category: Ferroelectric Memory Keyword: PZT, sol-gel method, FeRAM, low-pressure consolidation,
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Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi₂Ta₂O₉/Pt Capacitor Young Min KANG Seaung Suk LEE Beelyong YANG Choong Heui CHUNG Hun Woo KYE Suk Kyoung HONG Nam Soo KANG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/06/01 Vol. E84-C No. 6 pp. 757-762 Type of Manuscript: Special Section PAPER (Special Issue on Nonvolatile Memories) Category: FeRAMs Keyword: ferroelectric, nonvolatile, memory, FeRAM, imprint, reliability,
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Overview and Trend of Chain FeRAM Architecture Daisaburo TAKASHIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/06/01 Vol. E84-C No. 6 pp. 747-756 Type of Manuscript: INVITED PAPER (Special Issue on Nonvolatile Memories) Category: FeRAMs Keyword: ferroelectric, nonvolatile, memory, FeRAM, chain FeRAM,
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Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card Koji ASARI Hiroshige HIRANO Toshiyuki HONDA Tatsumi SUMI Masato TAKEO Nobuyuki MORIWAKI George NAKANE Tetsuji NAKAKUMA Shigeo CHAYA Toshio MUKUNOKI Yuji JUDAI Masamichi AZUMA Yasuhiro SHIMADA Tatsuo OTSUKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/04/20 Vol. E81-C No. 4 pp. 488-496 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films) Category: Keyword: FeRAM, high speed, low voltage, low power consumption, non-volatile, contactless IC card,
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Di/Ferroelectric Properties of Bismuth Based Layered Ferroelectric Films for Application to Non-volatile Memories Hitoshi TABATA Takeshi YANAGITA Tomoji KAWAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/04/20 Vol. E81-C No. 4 pp. 566-571 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films) Category: Keyword: ferroelectric thin film, non volatile memory, Bi base layer structured ferroelectrics laser ablation, dielectric constant, FeRAM,
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