Keyword : FET


Active Q Factor Analysis for Non-uniform Microstrip Stub Colpitts FET Oscillators
Tuya WUREN  Takashi OHIRA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2011/02/01
Vol. E94-A  No. 2  pp. 583-591
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
oscillatorQ factornon-uniform microtrip lineFETtransconductancemicrowave
  Summary |  Full Text:PDF (2MB)

On the Large Signal Evaluation and Modeling of GaN FET
Iltcho ANGELOV  Mattias THORSELL  Kristoffer ANDERSSON  Akira INOUE  Koji YAMANAKA  Hifumi NOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1225-1233
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
GaNFETsmall signal and large signal models
  Summary |  Full Text:PDF (1.2MB)

Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education
Fumihiko HIROSE  Tatsuro MIYAGI  Yuzuru NARITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/01/01
Vol. E93-C  No. 1  pp. 108-111
Type of Manuscript: PAPER
Category: Electronic Components
Keyword: 
organic gateFETscience education
  Summary |  Full Text:PDF (436.7KB)

Millimeter-Wave High-Power MMIC Switch with Multiple FET Resonators
Masatake HANGAI  Tamotsu NISHINO  Morishige HIEDA  Kunihiro ENDO  Moriyasu MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/09/01
Vol. E90-C  No. 9  pp. 1695-1701
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices/Circuits
Keyword: 
switchFETFET resonatormillimeter-wavehigh-powerlow-lossMMICs
  Summary |  Full Text:PDF (1.1MB)

Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors
Taiichi OTSUJI  Yoshihiro KANAMARU  Hajime KITAMURA  Mitsuru MATSUOKA  Osamu OGAWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1985-1993
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
plasma waveresonanceFETHEMTTerahertzpolaritonharmonic resonance
  Summary |  Full Text:PDF (1.1MB)

HFET and HBT Modelling for Circuit Analysis
Iltcho ANGELOV 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1968-1976
Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
FETHBTmodels
  Summary |  Full Text:PDF (541.9KB)

A Compact Wideband T/R Switching Circuit Utilizing Quadrature Couplers and Gate-and-Drain-Driven HPAs
Hiromitsu UCHIDA  Masatoshi NII  Norio TAKEUCHI  Yoshihiro TSUKAHARA  Moriyasu MIYAZAKI  Yasushi ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 2022-2028
Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
T/R switchingquadrature couplerFETbiasing conditionsmatching circuit
  Summary |  Full Text:PDF (1.5MB)

Prospects of Electron Spectroscopy of Working Organic Electronic Device Structures
Toshihiro SHIMADA  Atsushi KOMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/06/01
Vol. E85-C  No. 6  pp. 1330-1331
Type of Manuscript: Special Section LETTER (Special Issue on Recent Progress in Organic Molecular Electronics)
Category: Fabrication and Characterization of Thin Films
Keyword: 
electron spectroscopyXPS,UPSFETsolar cell
  Summary |  Full Text:PDF (232.3KB)

Numerical Analysis for Resonance Properties of Plasma-Wave Field-Effect Transistors and Their Terahertz Applications to Smart Photonic Network Systems
Taiichi OTSUJI  Shin NAKAE  Hajime KITAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1470-1476
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
plasma waveresonanceFETterahertzvirtual carrier
  Summary |  Full Text:PDF (205.9KB)

An InGaP/GaAs Composite Channel FET for High Power Device Applications
Shigeru NAKAJIMA  Ken NAKATA  Kunio TANAKA  Kenji OTOBE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1300-1305
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high power deviceInGaPFETelectron transport
  Summary |  Full Text:PDF (544.4KB)

An Efficient Large-Signal Modeling Method Using Load-Line Analysis and Its Application to Non-linear Characterization of FET
Yukio IKEDA  Kazutomi MORI  Masatoshi NAKAYAMA  Yasushi ITOH  Osami ISHIDA  Tadashi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/07/01
Vol. E84-C  No. 7  pp. 875-880
Type of Manuscript: Special Section PAPER (Special Issue on Techniques for Constructing Microwave Simulators--Design and Analysis Tools for Electromagnetic Fields, Circuits, and Antennas--)
Category: Modeling of Nonlinear Microwave Circuits
Keyword: 
microwaveamplifierFETmodelingnonlinear analysis
  Summary |  Full Text:PDF (1.1MB)

GaN-Based FETs for Microwave Power Amplification
Yi-Feng WU  Bernd P. KELLER  Stacia KELLER  Jane J. XU  Brian J. THIBEAULT  Steven P. DENBAARS  Umesh K. MISHRA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1895-1905
Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
GaNFETHEMTpower deviceamplifiermicrowave
  Summary |  Full Text:PDF (3.2MB)

Wide-Band CDMA Distortion Characteristics of an AlGaAs/InGaAs/AlGaAs Heterojunction FET under Various Quiescent Drain Current Operations
Gary HAU  Takeshi B. NISHIMURA  Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1928-1935
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
FETmicrowaveamplifierdistortionsimulationW-CDMA
  Summary |  Full Text:PDF (1021KB)

An MMIC Variable-Gain Amplifier Using a Cascode-Connected FET with Constant Phase Deviation
Hitoshi HAYASHI  Masahiro MURAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/01/20
Vol. E81-C  No. 1  pp. 70-77
Type of Manuscript: PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
variablegainamplifiercascodeFETphasedeviation
  Summary |  Full Text:PDF (621.7KB)

A Low Distortion Technique for Reducing Transmitter Intermodulation
Hitoshi HAYASHI  Masahiro MURAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/20
Vol. E80-C  No. 6  pp. 768-774
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
distortionFETtransmitterpower amplifierintermodulation
  Summary |  Full Text:PDF (456.7KB)

A Small-Sized 10 W Module for 1.5 GHz Portable DMCA Radios Using New Power Divider/Combiner
Masahiro MAEDA  Morio NAKAMURA  Shigeru MORIMOTO  Hiroyuki MASATO  Yorito OTA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/20
Vol. E80-C  No. 6  pp. 751-756
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
GaAspower modulehigh frequencypower divider/combinerFETisolationsecond-harmonic controlsmall sizehigh powerhigh efficiencylow supply voltagemobile radioDMCA
  Summary |  Full Text:PDF (461.2KB)

An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation
Shigeru WATANABE  Yuji ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/05/20
Vol. E79-C  No. 5  pp. 606-610
Type of Manuscript: Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
Category: Active Devices
Keyword: 
GaAsFETmicrowaveequivalent clrcuitmodelingsimulation
  Summary |  Full Text:PDF (351.7KB)