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Keyword : FET
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HFET and HBT Modelling for Circuit Analysis Iltcho ANGELOV
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C
No. 10
pp. 1968-1976
Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: Keyword: FET,
HBT,
models,
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Summary |
Full Text:PDF
(541.9KB)
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Prospects of Electron Spectroscopy of Working Organic Electronic Device Structures Toshihiro SHIMADA
Atsushi KOMA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2002/06/01
Vol. E85-C
No. 6
pp. 1330-1331
Type of Manuscript: Special Section LETTER (Special Issue on Recent Progress in Organic Molecular Electronics)
Category: Fabrication and Characterization of Thin Films Keyword: electron spectroscopy,
XPS,UPS,
FET,
solar cell,
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Full Text:PDF
(232.3KB)
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Numerical Analysis for Resonance Properties of Plasma-Wave Field-Effect Transistors and Their Terahertz Applications to Smart Photonic Network Systems Taiichi OTSUJI
Shin NAKAE
Hajime KITAMURA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10
pp. 1470-1476
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices Keyword: plasma wave,
resonance,
FET,
terahertz,
virtual carrier,
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(205.9KB)
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An InGaP/GaAs Composite Channel FET for High Power Device Applications Shigeru NAKAJIMA
Ken NAKATA
Kunio TANAKA
Kenji OTOBE
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10
pp. 1300-1305
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits Keyword: high power device,
InGaP,
FET,
electron transport,
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(544.4KB)
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Wide-Band CDMA Distortion Characteristics of an AlGaAs/InGaAs/AlGaAs Heterojunction FET under Various Quiescent Drain Current Operations Gary HAU
Takeshi B. NISHIMURA
Naotaka IWATA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C
No. 11
pp. 1928-1935
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices Keyword: FET,
microwave,
amplifier,
distortion,
simulation,
W-CDMA,
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Full Text:PDF
(1021KB)
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A Small-Sized 10 W Module for 1.5 GHz Portable DMCA Radios Using New Power Divider/Combiner Masahiro MAEDA
Morio NAKAMURA
Shigeru MORIMOTO
Hiroyuki MASATO
Yorito OTA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/20
Vol. E80-C
No. 6
pp. 751-756
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: Keyword: GaAs,
power module,
high frequency,
power divider/combiner,
FET,
isolation,
second-harmonic control,
small size,
high power,
high efficiency,
low supply voltage,
mobile radio,
DMCA,
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Full Text:PDF
(461.2KB)
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An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation Shigeru WATANABE
Yuji ODA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1996/05/20
Vol. E79-C
No. 5
pp. 606-610
Type of Manuscript: Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
Category: Active Devices Keyword: GaAs,
FET,
microwave,
equivalent clrcuit,
modeling,
simulation,
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Full Text:PDF
(351.7KB)
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