Keyword : DRAM


Small-Sized Leakage-Controlled Gated Sense Amplifier for 0.5-V Multi-Gigabit DRAM Arrays
Akira KOTABE  Riichiro TAKEMURA  Yoshimitsu YANAGAWA  Tomonori SEKIGUCHI  Kiyoo ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 594-599
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
DRAMlow voltagesense amplifiermid-point sensing
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An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs
Jong-Pil SON  Jin Ho KIM  Woo Song AHN  Seung Uk HAN  Satoru YAMADA  Byung-Sick MOON  Churoo PARK  Hong-Sun HWANG  Seong-Jin JANG  Joo Sun CHOI  Young-Hyun JUN  Soo-Won KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/10/01
Vol. E94-C  No. 10  pp. 1690-1697
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
DRAMantifuserepairpost-package repairrecovery
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Adaptive Circuits for the 0.5-V Nanoscale CMOS Era
Kiyoo ITOH  Masanao YAMAOKA  Takashi OSHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/03/01
Vol. E93-C  No. 3  pp. 216-233
Type of Manuscript: Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: INVITED
Keyword: 
minimum operating voltageSRAMDRAMFD-SOIFinFET
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DRAM Controller with a Complete Predictor
Vladimir V. STANKOVIC  Nebojsa Z. MILENKOVIC 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 2009/04/01
Vol. E92-D  No. 4  pp. 584-593
Type of Manuscript: PAPER
Category: Computer Systems
Keyword: 
DRAMlatencyDRAM controllerpredictor
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Reliable Cache Architectures and Task Scheduling for Multiprocessor Systems
Makoto SUGIHARA  Tohru ISHIHARA  Kazuaki MURAKAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/04/01
Vol. E91-C  No. 4  pp. 410-417
Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories)
Category: 
Keyword: 
single event upsetSRAMDRAMreliabilitycache architecturetask scheduling
  Summary |  Full Text:PDF

Low-Voltage Embedded RAMs in Nanometer Era
Takayuki KAWAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4  pp. 735-742
Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: INVITED
Keyword: 
low-voltageSRAMDRAMFD-SOItwin-cellembedded RAM
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A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI
Fukashi MORISHITA  Hideyuki NODA  Isamu HAYASHI  Takayuki GYOHTEN  Mako OKAMOTO  Takashi IPPOSHI  Shigeto MAEGAWA  Katsumi DOSAKA  Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4  pp. 765-771
Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Memory
Keyword: 
SOIcapacitorlessDRAMlow powerdata retention
  Summary |  Full Text:PDF

A Reliability-Enhanced TCAM Architecture with Associated Embedded DRAM and ECC
Hideyuki NODA  Katsumi DOSAKA  Hans Jurgen MATTAUSCH  Tetsushi KOIDE  Fukashi MORISHITA  Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/11/01
Vol. E89-C  No. 11  pp. 1612-1619
Type of Manuscript: Special Section PAPER (Special Section on Novel Device Architectures and System Integration Technologies)
Category: 
Keyword: 
soft errorECCTCAMembeddedDRAM
  Summary |  Full Text:PDF

A Study of Sense-Voltage Margins in Low-Voltage-Operating Embedded DRAM Macros
Akira YAMAZAKI  Fukashi MORISHITA  Naoya WATANABE  Teruhiko AMANO  Masaru HARAGUCHI  Hideyuki NODA  Atsushi HACHISUKA  Katsumi DOSAKA  Kazutami ARIMOTO  Setsuo WAKE  Hideyuki OZAKI  Tsutomu YOSHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/10/01
Vol. E88-C  No. 10  pp. 2020-2027
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
embedded memoryDRAMvoltage marginlow voltagesystem on chip
  Summary |  Full Text:PDF

Highly Flexible Row and Column Redundancy and Cycle Time Adaptive Read Data Path for Double Data Rate Synchronous Memories
Kiyohiro FURUTANI  Takeshi HAMAMOTO  Takeo MIKI  Masaya NAKANO  Takashi KONO  Shigeru KIKUDA  Yasuhiro KONISHI  Tsutomu YOSHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/02/01
Vol. E88-C  No. 2  pp. 255-263
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
DRAMredundancyhigh speedhigh density
  Summary |  Full Text:PDF

Efficient and Large-Current-Output Boosted Voltage Generators with Non-Overlapping-Clock-Driven Auxiliary Pumps for Sub-1-V Memory Applications
Kyeong-Sik MIN  Young-Hee KIM  Daejeong KIM  Dong Myeong KIM  Jin-Hong AHN  Jin-Yong CHUNG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/07/01
Vol. E87-C  No. 7  pp. 1208-1213
Type of Manuscript: LETTER
Category: Electronic Circuits
Keyword: 
charge pumpsvoltage generatorsDRAMlow voltage
  Summary |  Full Text:PDF

A Low Power Embedded DRAM Macro for Battery-Operated LSIs
Takeshi FUJINO  Akira YAMAZAKI  Yasuhiko TAITO  Mitsuya KINOSHITA  Fukashi MORISHITA  Teruhiko AMANO  Masaru HARAGUCHI  Makoto HATAKENAKA  Atsushi AMO  Atsushi HACHISUKA  Kazutami ARIMOTO  Hideyuki OZAKI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2003/12/01
Vol. E86-A  No. 12  pp. 2991-3000
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Power Optimization
Keyword: 
embedded memoryDRAMlow powersystem on chip
  Summary |  Full Text:PDF

A High-Endurance Read/Write Scheme for Half-Vcc Plate Nonvolatile DRAMs with Ferroelectric Capacitors
Hiroki FUJISAWA  Takeshi SAKATA  Tomonori SEKIGUCHI  Kazuyoshi TORII  Katsutaka KIMURA  Kazuhiko KAJIGAYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 763-770
Type of Manuscript: Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
DRAMferroelectric memoryhigh speedlow-powerhigh-endurance
  Summary |  Full Text:PDF

Architecture and Performance Evaluation of a New Functional Memory: Functional Memory for Addition
Kazutoshi KOBAYASHI  Masanao YAMAOKA  Yukifumi KOBAYASHI  Hidetoshi ONODERA  Keikichi TAMARU 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2000/12/20
Vol. E83-A  No. 12  pp. 2400-2408
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: VLSI Architecture
Keyword: 
VLSIfunctional memoryDRAMparallel processorblock matching
  Summary |  Full Text:PDF

Design and Analysis of Resonant-Tunneling-Diode (RTD) Based High Performance Memory System
Tetsuya UEMURA  Pinaki MAZUMDER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/09/20
Vol. E82-C  No. 9  pp. 1630-1637
Type of Manuscript: Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Application of Resonant Tunneling Devices
Keyword: 
resonant tunneling diodeDRAMsense amplifierinstabilityrefresh-free
  Summary |  Full Text:PDF

A Single Chip Multiprocessor Integrated with High Density DRAM
Tadaaki YAMAUCHI  Lance HAMMOND  Oyekunle A. OLUKOTUN  Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/08/20
Vol. E82-C  No. 8  pp. 1567-1577
Type of Manuscript: PAPER
Category: Electronic Circuits
Keyword: 
DRAMoh-chip DRAMembedded DRAMon-chip L2 cachesSRAM cachesmultiprocessormultiprocessor-on-a-chip
  Summary |  Full Text:PDF

Advanced Characterization Method for Sub-Micron DRAM Cell Transistors
Ikuo KURACHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/20
Vol. E82-C  No. 4  pp. 618-623
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
DRAMcell transistorstest structureparameter extractionparasitic resistance
  Summary |  Full Text:PDF

Evaluation of Shared DRAM for Parallel Processor System with Shared Memory
Hiroyuki KURINO  Keiichi HIRANO  Taizo ONO  Mitsumasa KOYANAGI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1998/12/20
Vol. E81-A  No. 12  pp. 2655-2660
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: LSI Architecture
Keyword: 
multiport memoryshared memoryparallel processor systemDRAM
  Summary |  Full Text:PDF

Evaluating DRAM Refresh Architectures for Merged DRAM/Logic LSIs
Taku OHSAWA  Koji KAI  Kazuaki MURAKAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/09/20
Vol. E81-C  No. 9  pp. 1455-1462
Type of Manuscript: Special Section PAPER (Special Issue on Novel VLSI Processor Architectures)
Category: 
Keyword: 
DRAMDRAM refreshmerged DRAM/logicsystem LSIlow power
  Summary |  Full Text:PDF

The Analysis of the Stacked-Surrounding Gate Transistor (S-SGT) DRAM for the High Speed and Low Voltage Operation
Tetsuo ENDOH  Katsuhisa SHINMEI  Hiroshi SAKURABA  Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/09/20
Vol. E81-C  No. 9  pp. 1491-1498
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
SGTS-SGTDRAMbit-line capacitance
  Summary |  Full Text:PDF

Application of Circuit-Level Hot-Carrier Reliability Simulation to Memory Design
Peter M. LEE  Tsuyoshi SEO  Kiyoshi ISE  Atsushi HIRAISHI  Osamu NAGASHIMA  Shoji YOSHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/20
Vol. E81-C  No. 4  pp. 595-601
Type of Manuscript: PAPER
Category: Electronic Circuits
Keyword: 
hot-carrier degradationreliabilitydevice lifetimecircuit simulationSRAMDRAM
  Summary |  Full Text:PDF

Folded Bitline Architecture for a Gigabit-Scale NAND DRAM
Shinichiro SHIRATAKE  Daisaburo TAKASHIMA  Takehiro HASEGAWA  Hiroaki NAKANO  Yukihito OOWAKI  Shigeyoshi WATANABE  Takashi OHSAWA  Kazunori OHUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/04/20
Vol. E80-C  No. 4  pp. 573-581
Type of Manuscript: Special Section PAPER (Special Issue on Circuit Technologies for Memory and Analog LSIs)
Category: 
Keyword: 
DRAMcascadeNANDfolded bitlineopen bitlinedie sizenoise immunity
  Summary |  Full Text:PDF

Hierarchical Word-Line Architecture for Large Capacity DRAMs
Tatsunori MUROTANI  Tadahiko SUGIBAYASHI  Masahide TAKADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/04/20
Vol. E80-C  No. 4  pp. 550-556
Type of Manuscript: INVITED PAPER (Special Issue on Circuit Technologies for Memory and Analog LSIs)
Category: Memory LSI
Keyword: 
DRAMhierarchical word linepartial subarray activation
  Summary |  Full Text:PDF

A Board Level Parallel Test Circuit and a Short Circuit Failure Repair Circuit for High-Density, Low-Power DRAMs
Kiyohiro FURUTANI  Tsukasa OOISHI  Mikio ASAKURA  Hideto HIDAKA  Hideyuki OZAKI  Michihiro YAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/04/20
Vol. E80-C  No. 4  pp. 582-589
Type of Manuscript: Special Section PAPER (Special Issue on Circuit Technologies for Memory and Analog LSIs)
Category: 
Keyword: 
DRAMtestredundancy
  Summary |  Full Text:PDF

A 250 mV Bit-Line Swing Scheme for 1-V Operating Gigabit Scale DRAMs
Tsuneo INABA  Daisaburo TAKASHIMA  Yukihito OOWAKI  Tohru OZAKI  Shigeyoshi WATANABE  Takashi OHSAWA  Kazunori OHUCHI  Hiroyuki TANGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/20
Vol. E79-C  No. 12  pp. 1699-1706
Type of Manuscript: Special Section PAPER (Special Issue on Low-Power LSI Technologies)
Category: 
Keyword: 
DRAMpower dissipationreliabilitybit-linewordlinesmall swingthreshold voltagesense amplifiermemory cell
  Summary |  Full Text:PDF

Plate Bumping Leakage Current Measurement Method and Its Application to Data Retention Characteristic Analysis for RJB DRAM Cells
Toru IWATA  Hiroyuki YAMAUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/20
Vol. E79-C  No. 12  pp. 1707-1712
Type of Manuscript: Special Section PAPER (Special Issue on Low-Power LSI Technologies)
Category: 
Keyword: 
DRAMdata retentionmemory-cell leakage current
  Summary |  Full Text:PDF

NAND-Structured DRAM Cell with Lithography-Oriented Design
Masami AOKI  Tohru OZAKI  Takashi YAMADA  Takeshi HAMAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/20
Vol. E79-C  No. 6  pp. 792-797
Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
memoryDRAMstacked capacitor
  Summary |  Full Text:PDF

Digital Delay Locked Loop and Design Technique for High-Speed Synchronous Interface
Yoshinori OKAJIMA  Masao TAGUCHI  Miki YANAGAWA  Koichi NISHIMURA  Osamu HAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/20
Vol. E79-C  No. 6  pp. 798-807
Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
DLLsynchronous interfaceDRAMbus timing skew
  Summary |  Full Text:PDF

Improvement of Refresh Characteristics by SIMOX Technology for Giga-bit DRAMs
Takaho TANIGAWA  Akira YOSHINO  Hiroki KOGA  Shuichi OHYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/20
Vol. E79-C  No. 6  pp. 781-786
Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
refresh characteristicsdata retention timeSIMOXDRAM
  Summary |  Full Text:PDF

A Crossing Charge Recycle Refresh Scheme with a Separated Driver Sense-Amplifier for Gb DRAMs
Isao NARITAKE  Tadahiko SUGIBAYASHI  Satoshi UTSUGI  Tatsunori MUROTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/20
Vol. E79-C  No. 6  pp. 787-791
Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
memoryDRAMhierarchical bit-linerefresh
  Summary |  Full Text:PDF

Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's
Yasuo YAMAGUCHI  Toshiyuki OASHI  Takahisa EIMORI  Toshiaki IWAMATSU  Shouichi MITAMOTO  Katsuhiro SUMA  Takahiro TSURUDA  Fukashi MORISHITA  Masakazu HIROSE  Hideto HIDAKA  Kazutami ARIMOTO  Kazuyasu FUJISHIMA  Yasuo INOUE  Tadashi NISHIMURA  Hirokazu MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/20
Vol. E79-C  No. 6  pp. 772-780
Type of Manuscript: INVITED PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
SOLSIMOXDRAMlow-voltage operation
  Summary |  Full Text:PDF

Trends in High-Speed DRAM Architectures
Masaki KUMANOYA  Toshiyuki OGAWA  Yasuhiro KONISHI  Katsumi DOSAKA  Kazuhiro SHIMOTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/20
Vol. E79-C  No. 4  pp. 472-481
Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
reviewDRAMhigh-speed DRAMmain memorygraphics memoryperformance gapbandwidth bottleneckperformance comparisonhigh-speed I/O interfaceunified memorysystem integration
  Summary |  Full Text:PDF

Half-Vcc Plate Nonvolatile DRAMs with Ferroelectric Capacitors
Kan TAKEUCHI  Katsumi MATSUNO  Yoshinobu NAKAGOME  Masakazu AOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/20
Vol. E79-C  No. 2  pp. 234-242
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
ferroelectric memoryDRAMhalf-V cc platenonvolatile memory
  Summary |  Full Text:PDF

NAND-Structured Trench Capacitor Cell Technologies for 256 Mb DRAM and Beyond
Takeshi HAMAMOTO  Yutaka ISHIBASHI  Masami AOKI  Yoshihiko SAITOH  Takashi YAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/20
Vol. E78-C  No. 7  pp. 789-796
Type of Manuscript: Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
memoryDRAMtrenchcapacitor
  Summary |  Full Text:PDF

Emerging Memory Solutions for Graphics Applications
Katsumi SUIZU  Toshiyuki OGAWA  Kazuyasu FUJISHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/20
Vol. E78-C  No. 7  pp. 773-781
Type of Manuscript: INVITED PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
3D computer graphicstexture mappingZ-bufferbandwidth bottleneckDRAMsystem memoryframe bufferperformance comparison
  Summary |  Full Text:PDF

A Synchronous DRAM with New High-Speed I/O Lines Method for the MultiMedia Age
Yuji SAKAI  Kanji OISHI  Miki MATSUMOTO  Shoji WADA  Tadamichi SAKASHITA  Masahiro KATAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/20
Vol. E78-C  No. 7  pp. 782-788
Type of Manuscript: Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
DRAMsynchronous operationmemory
  Summary |  Full Text:PDF

New α-Particle Induced Soft Error Mechanism in a Three Dimensional Capacitor Cell
Yukihito OOWAKI  Keiji MABUCHI  Shigeyoshi WATANABE  Kazunori OHUCHI  Jun'ichi MATSUNAGA  Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/20
Vol. E78-C  No. 7  pp. 845-851
Type of Manuscript: Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
α-particlesoft errorDRAM
  Summary |  Full Text:PDF

3-D CG Media Chip: An Experimental Single-Chip Architecture for Three-Dimensional Computer Graphics
Takao WATANABE  Kazushige AYUKAWA  Yoshinobu NAKAGOME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/12/20
Vol. E77-C  No. 12  pp. 1881-1887
Type of Manuscript: Special Section PAPER (Special Issue on Multimedia, Analog and Processing LSIs)
Category: Multimedia System LSIs
Keyword: 
media chipDRAM3-D computer graphics1.5-V operation0.35-µm CMOS design rule
  Summary |  Full Text:PDF

High Speed DRAMs with Innovative Architectures
Shigeo OHSHIMA  Tohru FURUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/20
Vol. E77-C  No. 8  pp. 1303-1315
Type of Manuscript: INVITED PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: DRAM
Keyword: 
DRAMmemory bottleneckdata bandwidthlatencysynchronous DRAMpipeline architecturedata prefetchingcache DRAMfast copybackRambus interfaceRambus DRAMprotocol packetPLL
  Summary |  Full Text:PDF

A Distributive Serial Multi-Bit Parallel Test Scheme for Large Capacity DRAMs
Tadahiko SUGIBAYASHI  Isao NARITAKE  Hiroshi TAKADA  Ken INOUE  Ichiro YAMAMOTO  Tatsuya MATANO  Mamoru FUJITA  Yoshiharu AIMOTO  Toshio TAKESHIMA  Satoshi UTSUGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/20
Vol. E77-C  No. 8  pp. 1323-1327
Type of Manuscript: Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: DRAM
Keyword: 
memoryDRAMtest
  Summary |  Full Text:PDF

High-Speed Circuit Techniques for Battery-Operated 16 Mbit CMOS DRAM
Toshikazu SUZUKI  Toru IWATA  Hironori AKAMATSU  Akihiro SAWADA  Toshiaki TSUJI  Hiroyuki YAMAUCHI  Takashi TANIGUCHI  Tsutomu FUJITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/20
Vol. E77-C  No. 8  pp. 1334-1342
Type of Manuscript: Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: DRAM
Keyword: 
DRAMcycle timebattery operatinghigh speed
  Summary |  Full Text:PDF

Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method
Yoshikazu OHNO  Hiroshi KIMURA  Ken-ichiro SONODA  Tadashi NISHIMURA  Shin-ichi SATOH  Hirokazu SAYAMA  Shigenori HARA  Mikio TAKAI  Hirokazu MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/20
Vol. E77-C  No. 3  pp. 399-405
Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
soft-errorDRAMmicroprobeprotonmapping
  Summary |  Full Text:PDF

(Ba0.75Sr0.25)TiO3 Films for 256 Mbit DRAM
Tsuyoshi HORIKAWA  Noboru MIKAMI  Hiromi ITO  Yoshikazu OHNO  Tetsuro MAKITA  Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/20
Vol. E77-C  No. 3  pp. 385-391
Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
(Ba,Sr)TiO3ferroelectricDRAMsputteringgrain size effect
  Summary |  Full Text:PDF

Design Rule Relaxation Approach for High-Density DRAMs
Takanori SAEKI  Eiichiro KAKEHASHI  Hidemitu MORI  Hiroki KOGA  Kenji NODA  Mamoru FUJITA  Hiroshi SUGAWARA  Kyoichi NAGATA  Shozo NISHIMOTO  Tatsunori MUROTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/20
Vol. E77-C  No. 3  pp. 406-415
Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
DRAMdesign ruleclose packed cell arrayBoosted Dual Word-Line scheme
  Summary |  Full Text:PDF

Application of KrF Excimer Laser Lithography to 256 MbDRAM Fabrication
Sin-ichi FUKUZAWA  Hiroshi YOSHINO  Shinji ISHIDA  Kenji KONDOH  Tsuyoshi YOSHII  Naoaki AIZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/20
Vol. E76-C  No. 11  pp. 1665-1669
Type of Manuscript: Special Section LETTER (Special Issue on LSI Memories)
Category: Application Specific Memory
Keyword: 
DRAMKrF excimer laserlithography double-layer resisttriple-layer resist
  Summary |  Full Text:PDF

Trends in Capacitor Dielectrics for DRAMs
Akihiko ISHITANI  Pierre-Yves LESAICHERRE  Satoshi KAMIYAMA  Koichi ANDO  Hirohito WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/20
Vol. E76-C  No. 11  pp. 1564-1581
Type of Manuscript: INVITED PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
capacitordielectricsSi3N4Ta2O5high permittivity materials256 Mbit1 GbitDRAM
  Summary |  Full Text:PDF

A Capacitor over Bit-Line (COB) Stacked Capacitor Cell Using Local Interconnect Layer for 64 MbDRAMs
Naoki KASAI  Masato SAKAO  Toshiyuki ISHIJIMA  Eiji IKAWA  Hirohito WATANABE  Toshio TAKESHIMA  Nobuhiro TANABE  Kazuo TERADA  Takamaro KIKKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/20
Vol. E76-C  No. 4  pp. 548-555
Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
DRAMmemory cellstacked capacitorlocal interconnect
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Stabilization of Voltage Limiter Circuit for High-Density DRAM's Using Pole-Zero Compensation
Hitoshi TANAKA  Masakazu AOKI  Jun ETOH  Masashi HORIGUCHI  Kiyoo ITOH  Kazuhiko KAJIGAYA  Tetsurou MATSUMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/11/20
Vol. E75-C  No. 11  pp. 1333-1343
Type of Manuscript: Special Section PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
memoryDRAMvoltage limiterpole-zero compensation
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ULSI Technology Trends toward 256K/1G DRAMs
Masahiro KASHIWAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/11/20
Vol. E75-C  No. 11  pp. 1304-1312
Type of Manuscript: INVITED PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
ULSIDRAMtechnology trendSOIvertical processing
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