IEICE SEARCH SYSTEM

Keyword : Coulomb blockade

Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device Mingu JO Yuki KATO Masashi ARITA Yukinori ONO Akira FUJIWARA Hiroshi INOKAWA Yasuo TAKAHASHI Jung-Bum CHOI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 865-870 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: single electron, nanodot, logic gate, dot array, Coulomb blockade,
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Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots Taku SHIBAGUCHI Mitsuhisa IKEDA Hideki MURAKAMI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 709-712 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Nanomaterials and Quantum-Effect Devices Keyword: silicon quantum dot, MOS memory, floating gate, Coulomb blockade,
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Effect of Interfacial Space Charges and Coupling Electrodes on Organic Single Electron Tunneling Device Yutaka NOGUCHI Mitsumasa IWAMOTO Tohru KUBOTA Shinro MASHIKO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/06/01 Vol. E85-C No. 6 pp. 1247-1252 Type of Manuscript: Special Section PAPER (Special Issue on Recent Progress in Organic Molecular Electronics) Category: Electronic Devices Keyword: Coulomb blockade, organic double barrier tunneling junction, interfacial space charge,
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Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors Andreas SCHOLZE Andreas SCHENK Wolfgang FICHTNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/20 Vol. E83-C No. 8 pp. 1242-1246 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Device Modeling and Simulation Keyword: single-electron tunneling, Coulomb blockade, conductance oscillations, transfer Hamiltonian formalism,
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Multiple-Valued Inverter Using a Single-Electron-Tunneling Circuit Masamichi AKAZAWA Kentarou KANAAMI Takashi YAMADA Yoshihito AMEMIYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/09/20 Vol. E82-C No. 9 pp. 1607-1614 Type of Manuscript: Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms) Category: Quantum Devices and Circuits Keyword: single electron, SET, multiple-valued, Coulomb blockade,
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A Simple Digital-to-Analog Conversion Technique Using Single-Electron Transistor Su Jin AHN Dae Mann KIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/04/20 Vol. E81-C No. 4 pp. 608-611 Type of Manuscript: LETTER Category: Quantum Electronics Keyword: single-electron tunneling, Coulomb blockade, digital-to-analog data conversion,
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Gate Performance in Resonant Tunneling Single Electron Transistor Takashi HONDA Seigo TARUCHA David Guy AUSTING
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/01/20 Vol. E81-C No. 1 pp. 2-7 Type of Manuscript: Special Section PAPER (Special Issue on Technology Challenges for Single Electron Devices) Category: Keyword: single electron tunneling, Coulomb oscillation, transistor, Coulomb blockade, resonant tunneling,
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Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device Minoru FUJISHIMA Hironobu FUKUI Shuhei AMAKAWA Koichiro HOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/07/20 Vol. E80-C No. 7 pp. 881-885 Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs) Category: Quantum Devices Keyword: short channel device, single electron, Coulomb blockade,
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Coulomb Blockade Effects in Edge Quantum Wire SOI-MOSFETs Akiko OHATA Akira TORIUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/20 Vol. E79-C No. 11 pp. 1586-1589 Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: Si-MOSFET, Coulomb blockade, single electron tunneling, edge quantum wire,
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Si Single-Electron Transistors on SIMOX Substrates Yasuo TAKAHASHI Akira FUJIWARA Masao NAGASE Hideo NAMATSU Kenji KURIHARA Kazumi IWADATE Katsumi MURASE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/20 Vol. E79-C No. 11 pp. 1503-1508 Type of Manuscript: INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: single-electron, Coulomb blockade, tunneling, pattern fluctuation,
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