Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7pp. 1015-1019 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: GaN Process Technology Keyword: ITO,
Schottky gate,
tunnel,
AlGaN/GaN HEMT,
gate leakage current,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-CNo. 7pp. 1064-1067 Type of Manuscript: Special Section LETTER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: AlGaN/GaN HEMT,
contact resistance,
transconductance,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/08/01 Vol. E86-CNo. 8pp. 1416-1421 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Keyword: frequency doubler,
AlGaN/GaN HEMT,
active integrated antenna,
conversion gain,