Keyword : AlGaAs/GaAs


3-V Operation Power HBTs for Digital Cellular Phones
Chang-Woo KIM Nobuyuki HAYAMA Hideki TAKAHASHI Yosuke MIYOSHI Norio GOTO Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/05/25
Vol. E79-C  No. 5 ; pp. 617-622
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
Category: Active Devices
Keyword: 
AlGaAs/GaAspower HBTsdigital cellular phonesoptimal thermal design
 Summary | Full Text:PDF(798.9KB)

Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency
Atsushi KAMEYAMA Alan MASSENGALE Changhong DAI James S. HARRIS, Jr. 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 518-523
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
HBTPnpAlGaAs/GaAscomplementary circuitgraded base
 Summary | Full Text:PDF(496.4KB)

Abnormal Epitaxial Layer of AlGaAs/GaAs Solar Cells for Space Applications
Sumio MATSUDA Masato UESUGI Susumu YOSHIDA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/01/25
Vol. E77-A  No. 1 ; pp. 150-157
Type of Manuscript:  Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
Keyword: 
epitaxial layerAlGaAs/GaAssolar cellspace application
 Summary | Full Text:PDF(1MB)

A 34.8 GHz 1/4 Static Frequency Divider Using AlGaAs/GaAs HBTs
Yoshiki YAMAUCHI Osaake NAKAJIMA Koichi NAGATA Hiroshi ITO Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1105-1109
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HBTGaAsICAlGaAs/GaAsfrequency divider
 Summary | Full Text:PDF(589.7KB)