IEICE TRANSACTIONS on Electronics

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Online ISSN : 1745-1353
Volume E93-C No.8  (Publication Date:2010/08/01)
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Special Section on Heterostructure Microelectronics with TWHM 2009

pp.1211-1211  FOREWORD  Open Access Paper
FOREWORD
Masaaki KUZUHARA  
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pp.1212-1217  PAPER-GaN-based Devices
Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Naoteru SHIGEKAWA  Suehiro SUGITANI  
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pp.1218-1224  PAPER-GaN-based Devices
2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
Yusuke IKAWA  Yorihide YUASA  Cheng-Yu HU  Jin-Ping AO  Yasuo OHNO  
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pp.1225-1233  PAPER-GaN-based Devices
On the Large Signal Evaluation and Modeling of GaN FET
Iltcho ANGELOV  Mattias THORSELL  Kristoffer ANDERSSON  Akira INOUE  Koji YAMANAKA  Hifumi NOTO  
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pp.1234-1237  PAPER-GaN-based Devices
Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
Cheng-Yu HU  Katsutoshi NAKATANI  Hiroji KAWAI  Jin-Ping AO  Yasuo OHNO  
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pp.1238-1244  PAPER-GaN-based Devices
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz
Stephan MAROLDT  Dirk WIEGNER  Stanislav VITANOV  Vassil PALANKOVSKI  Rudiger QUAY  Oliver AMBACHER  
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pp.1245-1250  PAPER-GaN-based Devices
Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO  Eunjung CHO  Giorgi AROSHVILI  Chong JIN  Dimitris PAVLIDIS  Laurence CONSIDINE  
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pp.1251-1257  PAPER-III-V High-Speed Devices and Circuits
E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
Issei WATANABE  Akira ENDOH  Takashi MIMURA  Toshiaki MATSUI  
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pp.1258-1265  PAPER-III-V High-Speed Devices and Circuits
Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method
Takayuki TAKEGISHI  Hisanao WATANABE  Shinsuke HARA  Hiroki I. FUJISHIRO  
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pp.1266-1272  PAPER-III-V High-Speed Devices and Circuits
A 90-Gb/s Modulator Driver IC Based on Functional Distributed Circuits for Optical Transmission Systems
Yasuyuki SUZUKI  Zin YAMAZAKI  Masayuki MAMADA  
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pp.1273-1278  PAPER-III-V High-Speed Devices and Circuits
A 120-Gbit/s 1.27-W 520-mVpp 2:1 Multiplexer IC Using Self-Aligned InP/InGaAs/InP DHBTs with Emitter Mesa Passivation
Yutaka ARAYASHIKI  Yukio OHKUBO  Taisuke MATSUMOTO  Yoshiaki AMANO  Akio TAKAGI  Yutaka MATSUOKA  
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pp.1279-1285  PAPER-III-V High-Speed Devices and Circuits
A 24-GS/s 6-bit R-2R Current-Steering DAC in InP HBT Technology
Munehiko NAGATANI  Hideyuki NOSAKA  Shogo YAMANAKA  Kimikazu SANO  Koichi MURATA  
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pp.1286-1289  PAPER-THz Electronics
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
Amine EL MOUTAOUAKIL  Tsuneyoshi KOMORI  Kouhei HORIIKE  Tetsuya SUEMITSU  Taiichi OTSUJI  
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pp.1290-1294  PAPER-THz Electronics
A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators
Koichi MAEZAWA  Takashi OHE  Koji KASAHARA  Masayuki MORI  
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pp.1295-1301  PAPER-THz Electronics
Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function
Hideaki SHIN-YA  Michihiko SUHARA  Naoya ASAOKA  Mamoru NAOI  
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pp.1302-1308  PAPER-III-V Heterostructure Devices
Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Masayuki ABE  
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pp.1309-1314  PAPER-III-V Heterostructure Devices
InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
Werner PROST  Dudu ZHANG  Benjamin MUNSTERMANN  Tobias FELDENGUT  Ralf GEITMANN  Artur POLOCZEK  Franz-Josef TEGUDE  
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Regular Section

pp.1315-1322  PAPER-Microwaves, Millimeter-Waves
A Highly Integrated Triple-Band RF Front-End Module for WiMAX Applications
Dongsu KIM  Dong Ho KIM  Jong In RYU  Chong-Dae PARK  Jun Chul KIM  Jong Chul PARK  
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pp.1323-1332  PAPER-Microwaves, Millimeter-Waves
Design of Highly Efficient and Compact RF-DC Conversion Circuit at mW-class by LE-FDTD Method
Tsunayuki YAMAMOTO  Kazuhiro FUJIMORI  Minoru SANAGI  Shigeji NOGI  
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pp.1333-1337  PAPER-Electronic Circuits
A High-Throughput On-Chip Variation Monitoring Circuit for MOSFET Threshold Voltage Using VCDL and Time-to-Digital Converter
Jae-seung LEE  Jae-Yoon SIM  Hong June PARK  
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pp.1338-1348  PAPER-Electronic Circuits
An Asynchronous FPGA Based on LEDR/4-Phase-Dual-Rail Hybrid Architecture
Shota ISHIHARA  Yoshiya KOMATSU  Masanori HARIYAMA  Michitaka KAMEYAMA  
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pp.1349-1358  PAPER-Semiconductor Materials and Devices
Exhaustive and Systematic Accuracy Verification and Enhancement of STI Stress Compact Model for General Realistic Layout Patterns
Kenta YAMADA  Toshiyuki SYO  Hisao YOSHIMURA  Masaru ITO  Tatsuya KUNIKIYO  Toshiki KANAMOTO  Shigetaka KUMASHIRO  
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pp.1359-1364  PAPER-Integrated Electronics
An Unassisted Low-Voltage-Trigger ESD Protection Structure in a 0.18-µm CMOS Process without Extra Process Cost
Bing LI  Yi SHAN  
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pp.1365-1370  PAPER-Integrated Electronics
Design and Measurement of a 1-kBit eFuse One-Time Programmable Memory IP Based on a BCD Process
Du-Hwi KIM  Ji-Hye JANG  Liyan JIN  Jae-Hyung LEE  Pan-Bong HA  Young-Hee KIM  
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pp.1371-1374  BRIEF PAPER-Electromagnetic Theory
Two-Stage Perfectly Matched Layer for the Analysis of Plasmonic Structures
Kyung-Young JUNG  Saehoon JU  Fernando L. TEIXEIRA  
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pp.1375-1376  LETTER-Electronic Circuits
Low-Voltage Class-AB CMOS Output Stage with Tunable Quiescent Current
Zhenpeng BIAN  Ruohe YAO  Fei LUO  
Summary | Full Text:PDF (73.8KB) >>Buy this Article

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