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Online ISSN : 1745-1353

Volume E93-C No.8 (Publication Date:2010/08/01)

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Special Section on Heterostructure Microelectronics with TWHM 2009

pp.1211-1211 FOREWORD FOREWORD Masaaki KUZUHARA
	Summary \| Full Text:PDF (88.4KB)

pp.1212-1217 PAPER-GaN-based Devices Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs Naoteru SHIGEKAWA Suehiro SUGITANI
	Summary \| Full Text:PDF (585.4KB)

pp.1218-1224 PAPER-GaN-based Devices 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection Yusuke IKAWA Yorihide YUASA Cheng-Yu HU Jin-Ping AO Yasuo OHNO
	Summary \| Full Text:PDF (708.5KB)

pp.1225-1233 PAPER-GaN-based Devices On the Large Signal Evaluation and Modeling of GaN FET Iltcho ANGELOV Mattias THORSELL Kristoffer ANDERSSON Akira INOUE Koji YAMANAKA Hifumi NOTO
	Summary \| Full Text:PDF (1.2MB)

pp.1234-1237 PAPER-GaN-based Devices Buffer Layer Doping Concentration Measurement Using V_T-V_SUB Characteristics of GaN HEMT with p-GaN Substrate Layer Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO
	Summary \| Full Text:PDF (714.1KB)

pp.1238-1244 PAPER-GaN-based Devices Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz Stephan MAROLDT Dirk WIEGNER Stanislav VITANOV Vassil PALANKOVSKI Rudiger QUAY Oliver AMBACHER
	Summary \| Full Text:PDF (1.5MB)

pp.1245-1250 PAPER-GaN-based Devices Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si₃N₄ Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE
	Summary \| Full Text:PDF (1MB)

pp.1251-1257 PAPER-III-V High-Speed Devices and Circuits E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology Issei WATANABE Akira ENDOH Takashi MIMURA Toshiaki MATSUI
	Summary \| Full Text:PDF (844KB)

pp.1258-1265 PAPER-III-V High-Speed Devices and Circuits Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method Takayuki TAKEGISHI Hisanao WATANABE Shinsuke HARA Hiroki I. FUJISHIRO
	Summary \| Full Text:PDF (1.7MB)

pp.1266-1272 PAPER-III-V High-Speed Devices and Circuits A 90-Gb/s Modulator Driver IC Based on Functional Distributed Circuits for Optical Transmission Systems Yasuyuki SUZUKI Zin YAMAZAKI Masayuki MAMADA
	Summary \| Full Text:PDF (698.3KB)

pp.1273-1278 PAPER-III-V High-Speed Devices and Circuits A 120-Gbit/s 1.27-W 520-mVpp 2:1 Multiplexer IC Using Self-Aligned InP/InGaAs/InP DHBTs with Emitter Mesa Passivation Yutaka ARAYASHIKI Yukio OHKUBO Taisuke MATSUMOTO Yoshiaki AMANO Akio TAKAGI Yutaka MATSUOKA
	Summary \| Full Text:PDF (980.8KB)

pp.1279-1285 PAPER-III-V High-Speed Devices and Circuits A 24-GS/s 6-bit R-2R Current-Steering DAC in InP HBT Technology Munehiko NAGATANI Hideyuki NOSAKA Shogo YAMANAKA Kimikazu SANO Koichi MURATA
	Summary \| Full Text:PDF (1.1MB)

pp.1286-1289 PAPER-THz Electronics Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems Amine EL MOUTAOUAKIL Tsuneyoshi KOMORI Kouhei HORIIKE Tetsuya SUEMITSU Taiichi OTSUJI
	Summary \| Full Text:PDF (608.8KB)

pp.1290-1294 PAPER-THz Electronics A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators Koichi MAEZAWA Takashi OHE Koji KASAHARA Masayuki MORI
	Summary \| Full Text:PDF (616.3KB)

pp.1295-1301 PAPER-THz Electronics Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function Hideaki SHIN-YA Michihiko SUHARA Naoya ASAOKA Mamoru NAOI
	Summary \| Full Text:PDF (845.9KB)

pp.1302-1308 PAPER-III-V Heterostructure Devices Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application Masayuki ABE
	Summary \| Full Text:PDF (524KB)

pp.1309-1314 PAPER-III-V Heterostructure Devices InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification Werner PROST Dudu ZHANG Benjamin MUNSTERMANN Tobias FELDENGUT Ralf GEITMANN Artur POLOCZEK Franz-Josef TEGUDE
	Summary \| Full Text:PDF (833.7KB)

Regular Section

pp.1315-1322 PAPER-Microwaves, Millimeter-Waves A Highly Integrated Triple-Band RF Front-End Module for WiMAX Applications Dongsu KIM Dong Ho KIM Jong In RYU Chong-Dae PARK Jun Chul KIM Jong Chul PARK
	Summary \| Full Text:PDF (1.1MB)

pp.1323-1332 PAPER-Microwaves, Millimeter-Waves Design of Highly Efficient and Compact RF-DC Conversion Circuit at mW-class by LE-FDTD Method Tsunayuki YAMAMOTO Kazuhiro FUJIMORI Minoru SANAGI Shigeji NOGI
	Summary \| Full Text:PDF (1.3MB)

pp.1333-1337 PAPER-Electronic Circuits A High-Throughput On-Chip Variation Monitoring Circuit for MOSFET Threshold Voltage Using VCDL and Time-to-Digital Converter Jae-seung LEE Jae-Yoon SIM Hong June PARK
	Summary \| Full Text:PDF (929.6KB)

pp.1338-1348 PAPER-Electronic Circuits An Asynchronous FPGA Based on LEDR/4-Phase-Dual-Rail Hybrid Architecture Shota ISHIHARA Yoshiya KOMATSU Masanori HARIYAMA Michitaka KAMEYAMA
	Summary \| Full Text:PDF (1.6MB)

pp.1349-1358 PAPER-Semiconductor Materials and Devices Exhaustive and Systematic Accuracy Verification and Enhancement of STI Stress Compact Model for General Realistic Layout Patterns Kenta YAMADA Toshiyuki SYO Hisao YOSHIMURA Masaru ITO Tatsuya KUNIKIYO Toshiki KANAMOTO Shigetaka KUMASHIRO
	Summary \| Full Text:PDF (2.2MB)

pp.1359-1364 PAPER-Integrated Electronics An Unassisted Low-Voltage-Trigger ESD Protection Structure in a 0.18-µm CMOS Process without Extra Process Cost Bing LI Yi SHAN
	Summary \| Full Text:PDF (519.7KB)

pp.1365-1370 PAPER-Integrated Electronics Design and Measurement of a 1-kBit eFuse One-Time Programmable Memory IP Based on a BCD Process Du-Hwi KIM Ji-Hye JANG Liyan JIN Jae-Hyung LEE Pan-Bong HA Young-Hee KIM
	Summary \| Full Text:PDF (1.1MB)

pp.1371-1374 BRIEF PAPER-Electromagnetic Theory Two-Stage Perfectly Matched Layer for the Analysis of Plasmonic Structures Kyung-Young JUNG Saehoon JU Fernando L. TEIXEIRA
	Summary \| Full Text:PDF (514.3KB)

pp.1375-1376 LETTER-Electronic Circuits Low-Voltage Class-AB CMOS Output Stage with Tunable Quiescent Current Zhenpeng BIAN Ruohe YAO Fei LUO
	Summary \| Full Text:PDF (73.2KB)