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Online ISSN : 1745-1353

Volume E93-C No.5 (Publication Date:2010/05/01)

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Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

pp.533-533 FOREWORD FOREWORD Shigeyoshi WATANABE
	Summary \| Full Text:PDF (141.7KB)

pp.534-539 PAPER-Multi-Gate Technology Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure Tetsuo ENDOH Koji SAKUI Yukio YASUDA
	Summary \| Full Text:PDF (3.6MB)

pp.540-545 PAPER-Multi-Gate Technology Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer Dong Seup LEE Hong-Seon YANG Kwon-Chil KANG Joung-Eob LEE Jung Han LEE Seongjae CHO Byung-Gook PARK
	Summary \| Full Text:PDF (3.5MB)

pp.546-551 PAPER-Emerging Devices Synthesis of Small Diameter Silicon Nanowires on SiO₂ and Si₃N₄ Surfaces Jae Hyun AHN Jae-Hyun LEE Tae-Woong KOO MyungGil KANG Dongmok WHANG SungWoo HWANG
	Summary \| Full Text:PDF (3.2MB)

pp.552-556 PAPER-Emerging Devices Study on Quantum Electro-Dynamics in Vertical MOSFET Masakazu MURAGUCHI Tetsuo ENDOH
	Summary \| Full Text:PDF (3.2MB)

pp.557-562 PAPER-Emerging Devices Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET Tetsuo ENDOH Koji SAKUI Yukio YASUDA
	Summary \| Full Text:PDF (7.8MB)

pp.563-568 PAPER-Emerging Devices Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Masakazu MURAGUCHI Yukihiro TAKADA Shintaro NOMURA Tetsuo ENDOH Kenji SHIRAISHI
	Summary \| Full Text:PDF (3.3MB)

pp.569-572 PAPER-Emerging Devices Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Katsunori MAKIHARA Mitsuhisa IKEDA Akira KAWANAMI Seiichi MIYAZAKI
	Summary \| Full Text:PDF (2.5MB)

pp.573-578 PAPER-Compound Semiconductor Devices Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission Toshihiro ITOH Kimikazu SANO Hiroyuki FUKUYAMA Koichi MURATA
	Summary \| Full Text:PDF (6.4MB)

pp.579-584 PAPER-Compound Semiconductor Devices Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness Masanobu HIROKI Narihiko MAEDA Naoteru SHIGEKAWA
	Summary \| Full Text:PDF (1.2MB)

pp.585-589 PAPER-Compound Semiconductor Devices InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators Mi-Ra KIM Jin-Koo RHEE Chang-Woo LEE Yeon-Sik CHAE Jae-Hyun CHOI Wan-Joo KIM
	Summary \| Full Text:PDF (2.7MB)

pp.590-595 PAPER-Flash/Advanced Memory SONOS-Type Flash Memory with HfO₂ Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition Jae Sub OH Kwang Il CHOI Young Su KIM Min Ho KANG Myeong Ho SONG Sung Kyu LIM Dong Eun YOO Jeong Gyu PARK Hi Deok LEE Ga Won LEE
	Summary \| Full Text:PDF (1.9MB)

pp.596-601 PAPER-Flash/Advanced Memory Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK
	Summary \| Full Text:PDF (1.2MB)

pp.602-607 PAPER-Flash/Advanced Memory Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit Masashi KAMIYANAGI Fumitaka IGA Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH
	Summary \| Full Text:PDF (3.2MB)

pp.608-613 PAPER-Flash/Advanced Memory Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits Fumitaka IGA Masashi KAMIYANAGI Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH
	Summary \| Full Text:PDF (1.2MB)

pp.614-618 PAPER-Analog/RF Devices A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology Seungwoo SEO Jae-Sung RIEH
	Summary \| Full Text:PDF (3.6MB)

pp.619-624 PAPER-Analog/RF Devices Demultiplexing Property Owing to a Composite Right/Left-Handed Transmission Line with Leaky Wave Radiation toward Functional Wireless Interconnects Sadaharu ITO Michihiko SUHARA
	Summary \| Full Text:PDF (3.1MB)

pp.625-630 PAPER-Analog/RF Devices On-Chip Charged Device Model ESD Protection Design Method Using Very Fast Transmission Line Pulse System for RF ICs Jae-Young PARK Jong-Kyu SONG Dae-Woo KIM Chang-Soo JANG Won-Young JUNG Taek-Soo KIM
	Summary \| Full Text:PDF (4.9MB)

pp.631-639 PAPER-Manufacturing Technology Character-Size Optimization for Reducing the Number of EB Shots of MCC Lithographic Systems Makoto SUGIHARA
	Summary \| Full Text:PDF (583.7KB)

pp.640-643 BRIEF PAPER-Sensors Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon Chun-Hyung CHO Ginkyu CHOI Ho-Young CHA
	Summary \| Full Text:PDF (5.1MB)

pp.644-647 BRIEF PAPER-Compound Semiconductor Devices Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector Yasuyuki MIYAMOTO Shinnosuke TAKAHASHI Takashi KOBAYASHI Hiroyuki SUZUKI Kazuhito FURUYA
	Summary \| Full Text:PDF (5.1MB)

pp.648-650 BRIEF PAPER-Compound Semiconductor Devices 4H-SiC Avalanche Photodiodes for 280 nm UV Detection Ho-Young CHA Hyuk-Kee SUNG Hyungtak KIM Chun-Hyung CHO Peter M. SANDVIK
	Summary \| Full Text:PDF (972.8KB)

pp.651-653 BRIEF PAPER-Memory Devices Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al₂O₃ and SiO₂ Stacked Tunneling Layers Hyun Woo KIM Dong Hun KIM Joo Hyung YOU Tae Whan KIM
	Summary \| Full Text:PDF (507.9KB)

pp.654-657 BRIEF PAPER-Memory Devices Multilevel Dual-Channel NAND Flash Memories with High Read and Program Verifying Speeds Utilizing Asymmetrically-Doped Channel Regions Joung Woo LEE Joo Hyung YOU Sang Hyun JANG Kae Dal KWACK Tae Whan KIM
	Summary \| Full Text:PDF (2.1MB)

pp.658-661 BRIEF PAPER-Memory Devices Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40 nm DRAM Device Soo Han CHOI Young Hee PARK Chul Hong PARK Sang Hoon LEE Moon Hyun YOO Jun Dong CHO Gyu Tae KIM
	Summary \| Full Text:PDF (2.6MB)

Regular Section

pp.662-669 PAPER-Electronic Circuits A Low-Voltage High-Gain Quadrature Up-Conversion 5 GHz CMOS RF Mixer Wan-Rone LIOU Mei-Ling YEH Sheng-Hing KUO Yao-Chain LIN
	Summary \| Full Text:PDF (2.8MB)

pp.670-677 PAPER-Electromechanical Devices and Components Contact Mechanisms and Contact Resistance Characteristics of Solid Tin and Plated Tin Contacts Used for Connectors Terutaka TAMAI Shigeru SAWADA Yasuhiro HATTORI
	Summary \| Full Text:PDF (3MB)

pp.678-684 PAPER-Semiconductor Materials and Devices Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs Hiroshi SHIMOMURA Kuniyuki KAKUSHIMA Hiroshi IWAI
	Summary \| Full Text:PDF (4.1MB)

pp.685-695 PAPER-Integrated Electronics A Complete Charge Recycling TCAM with Checkerboard Array Arrangement for Low Power Applications Katsumi DOSAKA Daisuke OGAWA Takahito KUSUMOTO Masayuki MIYAMA Yoshio MATSUDA
	Summary \| Full Text:PDF (4.3MB)

pp.696-702 PAPER-Integrated Electronics A Low Power Test Pattern Generator for BIST Shaochong LEI Feng LIANG Zeye LIU Xiaoying WANG Zhen WANG
	Summary \| Full Text:PDF (1MB)

pp.703-705 LETTER-Microwaves, Millimeter-Waves Compact Four-Way Ka-Band Power Divider/Combiner Based on Finline Yihong ZHOU Jiayin LI Haiyan JIN Haiyang WANG
	Summary \| Full Text:PDF (3.8MB)

pp.706-708 LETTER-Microwaves, Millimeter-Waves A CMOS RF Programmable Gain Amplifier Using Current Mirror Method for Digital TV Tuner Applications Hyouk-Kyu CHA
	Summary \| Full Text:PDF (397.2KB)

pp.709-711 LETTER-Integrated Electronics New Low-Voltage Low-Latency Mixed-Voltage I/O Buffer Joung-Yeal KIM Su-Jin PARK Yong-Ki KIM Sang-Keun HAN Young-Hyun JUN Chilgee LEE Tae Hee HAN Bai-Sun KONG
	Summary \| Full Text:PDF (294.3KB)

pp.712-714 LETTER-Electronic Displays Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes Ching-Lin FAN Yu-Sheng LIN Yan-Wei LIU
	Summary \| Full Text:PDF (1.8MB)