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Online ISSN : 1745-1353

Volume E91-C No.7 (Publication Date:2008/07/01)

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Special Section on Heterostructure Microelectronics with TWHM 2007

pp.983-983 FOREWORD FOREWORD Takao WAHO
	Summary \| Full Text:PDF (59.2KB)

pp.984-988 PAPER-INVITED Development of High-Frequency GaN HFETs for Millimeter-Wave Applications Masataka HIGASHIWAKI Takashi MIMURA Toshiaki MATSUI
	Summary \| Full Text:PDF (451.2KB)

pp.989-993 PAPER-Nitride-based Devices Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI
	Summary \| Full Text:PDF (815.6KB)

pp.994-1000 PAPER-Nitride-based Devices AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate Sanghyun SEO Kaustav GHOSE Guang Yuan ZHAO Dimitris PAVLIDIS
	Summary \| Full Text:PDF (566.1KB)

pp.1001-1003 PAPER-Nitride-based Devices Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA
	Summary \| Full Text:PDF (504.5KB)

pp.1004-1008 PAPER-Nitride-based Devices Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress Jin-Ping AO Yuya YAMAOKA Masaya OKADA Cheng-Yu HU Yasuo OHNO
	Summary \| Full Text:PDF (504.1KB)

pp.1009-1014 PAPER-GaN Process Technology Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs Toshiharu MARUI Shinich HOSHI Masanori ITOH Isao TAMAI Fumihiko TODA Hideyuki OKITA Yoshiaki SANO Shohei SEKI
	Summary \| Full Text:PDF (849.7KB)

pp.1015-1019 PAPER-GaN Process Technology Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs Keita MATSUDA Takeshi KAWASAKI Ken NAKATA Takeshi IGARASHI Seiji YAEGASSI
	Summary \| Full Text:PDF (510.1KB)

pp.1020-1024 PAPER-GaN Process Technology A Study on Ohmic Contact to Dry-Etched p-GaN Cheng-Yu HU Jin-Ping AO Masaya OKADA Yasuo OHNO
	Summary \| Full Text:PDF (377.5KB)

pp.1025-1030 PAPER-Novel Integration Technology A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch Koichi MAEZAWA Ikuo SOGA Shigeru KISHIMOTO Takashi MIZUTANI Kazuhiro AKAMATSU
	Summary \| Full Text:PDF (1.5MB)

pp.1031-1041 PAPER-INVITED Current Status and Future Prospects of SiC Power JFETs and ICs Jian H. ZHAO Kuang SHENG Yongxi ZHANG Ming SU
	Summary \| Full Text:PDF (1.1MB)

pp.1042-1049 PAPER-Wide Bandgap Devices RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination Makoto KASU Kenji UEDA Hiroyuki KAGESHIMA Yoshiharu YAMAUCHI
	Summary \| Full Text:PDF (1.2MB)

pp.1050-1057 PAPER-INVITED Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications J. Brad BOOS Brian R. BENNETT Nicolas A. PAPANICOLAOU Mario G. ANCONA James G. CHAMPLAIN Yeong-Chang CHOU Michael D. LANGE Jeffrey M. YANG Robert BASS Doewon PARK Ben V. SHANABROOK
	Summary \| Full Text:PDF (722.6KB)

pp.1058-1062 PAPER-Sb-based Devices Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements Jochen SIGMUND Jean-Francois LAMPIN Valentin IVANNIKOV Cezary SYDLO Michail FEIGINOV Dimitris PAVLIDIS Peter MEISSNER Hans L. HARTNAGEL
	Summary \| Full Text:PDF (249.5KB)

pp.1063-1069 PAPER-Emerging Devices Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures Hong-Quan ZHAO Seiya KASAI Tamotsu HASHIZUME Nan-Jian WU
	Summary \| Full Text:PDF (793.9KB)

pp.1070-1075 PAPER-Emerging Devices Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors Michihiko SUHARA Eri UEKI Tsugunori OKUMURA
	Summary \| Full Text:PDF (286KB)

pp.1076-1083 PAPER-INVITED GaAs Industry in Europe-- Technologies, Trends and New Developments Helmut JUNG Herve BLANCK Wolfgang BOSCH Jim MAYOCK
	Summary \| Full Text:PDF (1.5MB)

pp.1084-1090 PAPER-GaAs- and InP-Based Devices Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t Norihide KASHIO Kenji KURISHIMA Yoshino K. FUKAI Shoji YAMAHATA
	Summary \| Full Text:PDF (957.7KB)

pp.1091-1097 PAPER-GaAs- and InP-Based Devices Large Signal Evaluation of Nonlinear HBT Model Iltcho ANGELOV Akira INOUE Shinsuke WATANABE
	Summary \| Full Text:PDF (762.5KB)

pp.1098-1103 PAPER-GaAs- and InP-Based Devices High-Performance 76-GHz Planar Gunn VCO Yoshimichi FUKASAWA Kiyoshi KAWAGUCHI Takashi YOSHIDA Takahiro SUGIYAMA Atsushi NAKAGAWA
	Summary \| Full Text:PDF (1MB)

pp.1104-1108 PAPER-GaAs- and InP-Based Devices 1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p⁺-GaAs Gate Hetero-Junction FET Fumio HARIMA Yasunori BITO Hidemasa TAKAHASHI Naotaka IWATA
	Summary \| Full Text:PDF (484KB)

Joint Special Section on Opto-electronics and Communications toward NGN and beyond

pp.1109-1109 FOREWORD FOREWORD Yuzo YOSHIKUNI
	Summary \| Full Text:PDF (56.1KB)

pp.1110-1116 PAPER Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect Yu SHIMIZU Sou KAWABE Hiroya IWASAKI Takayuki SUGIO Kazuhiko SHIMOMURA
	Summary \| Full Text:PDF (859.9KB)

pp.1117-1120 PAPER Polymeric Waveguide Optical Switch Using Rotary Drive Mechanism Toshitsugu UESUGI Shiho ZAIZEN Atsushi SUGITATSU Tatsuo HATTA
	Summary \| Full Text:PDF (440.6KB)

pp.1121-1128 PAPER All-Optical Phase Multiplexing from π/2-Shifted DPSK-WDM to DQPSK Using Four-Wave Mixing in Highly-Nonlinear Fiber Guo-Wei LU Kazi Sarwar ABEDIN Tetsuya MIYAZAKI
	Summary \| Full Text:PDF (823.5KB)

pp.1129-1135 PAPER Dispersion and Splice Characteristics of Bend-Insensitive Fibers with Trench-Index Profile Compliant with G.652 Shoichiro MATSUO Tomohiro NUNOME Kuniharu HIMENO Haruhiko TSUCHIYA
	Summary \| Full Text:PDF (1.7MB)

pp.1136-1141 PAPER Designs and Fabrications of Photonic Crystal Fiber Couplers with Air Hole Controlled Tapers Hirohisa YOKOTA Hiroki KAWASHIRI Yutaka SASAKI
	Summary \| Full Text:PDF (753KB)

Regular Section

pp.1142-1150 PAPER-Semiconductor Materials and Devices Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress Kenta YAMADA Takashi SATO Shuhei AMAKAWA Noriaki NAKAYAMA Kazuya MASU Shigetaka KUMASHIRO
	Summary \| Full Text:PDF (1.3MB)

pp.1151-1157 PAPER-Integrated Electronics Design of a High-Precision DDS-Based Configurable Clock Generator Hsin-Chuan CHEN
	Summary \| Full Text:PDF (478.4KB)

pp.1158-1166 PAPER-Electronic Displays Excitation Phenomena of Plasma Display Panel Teruo KURAI
	Summary \| Full Text:PDF (298.6KB)

pp.1167-1170 LETTER-Electromagnetic Theory RCS Prediction Method from One-Dimensional Intensity Data in Near-Field Yoshio INASAWA Hiroaki MIYASHITA Yoshihiko KONISHI
	Summary \| Full Text:PDF (352.3KB)

pp.1171-1174 LETTER-Integrated Electronics A Partial Access Mechanism on a Register for Low-Cost Embedded Multimedia ASIP Ha-young JEONG Min-young CHO Won HUR Yong-surk LEE
	Summary \| Full Text:PDF (270KB)