IEICE TRANSACTIONS on Electronics

Archive Index

Online ISSN : 1745-1353
Volume E91-C No.7  (Publication Date:2008/07/01)
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Special Section on Heterostructure Microelectronics with TWHM 2007

pp.983-983  FOREWORD
FOREWORD
Takao WAHO  
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pp.984-988  INVITED PAPER
Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
Masataka HIGASHIWAKI  Takashi MIMURA  Toshiaki MATSUI  
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pp.989-993  PAPER-Nitride-based Devices
Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Masafumi ITO  Shigeru KISHIMOTO  Fumihiko NAKAMURA  Takashi MIZUTANI  
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pp.994-1000  PAPER-Nitride-based Devices
AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
Sanghyun SEO  Kaustav GHOSE  Guang Yuan ZHAO  Dimitris PAVLIDIS  
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pp.1001-1003  PAPER-Nitride-based Devices
Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
Shun SUGIURA  Shigeru KISHIMOTO  Takashi MIZUTANI  Masayuki KURODA  Tetsuzo UEDA  Tsuyoshi TANAKA  
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pp.1004-1008  PAPER-Nitride-based Devices
Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Jin-Ping AO  Yuya YAMAOKA  Masaya OKADA  Cheng-Yu HU  Yasuo OHNO  
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pp.1009-1014  PAPER-GaN Process Technology
Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
Toshiharu MARUI  Shinich HOSHI  Masanori ITOH  Isao TAMAI  Fumihiko TODA  Hideyuki OKITA  Yoshiaki SANO  Shohei SEKI  
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pp.1015-1019  PAPER-GaN Process Technology
Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs
Keita MATSUDA  Takeshi KAWASAKI  Ken NAKATA  Takeshi IGARASHI  Seiji YAEGASSI  
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pp.1020-1024  PAPER-GaN Process Technology
A Study on Ohmic Contact to Dry-Etched p-GaN
Cheng-Yu HU  Jin-Ping AO  Masaya OKADA  Yasuo OHNO  
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pp.1025-1030  PAPER-Novel Integration Technology
A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
Koichi MAEZAWA  Ikuo SOGA  Shigeru KISHIMOTO  Takashi MIZUTANI  Kazuhiro AKAMATSU  
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pp.1031-1041  INVITED PAPER
Current Status and Future Prospects of SiC Power JFETs and ICs
Jian H. ZHAO  Kuang SHENG  Yongxi ZHANG  Ming SU  
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pp.1042-1049  PAPER-Wide Bandgap Devices
RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
Makoto KASU  Kenji UEDA  Hiroyuki KAGESHIMA  Yoshiharu YAMAUCHI  
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pp.1050-1057  INVITED PAPER
Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
J. Brad BOOS  Brian R. BENNETT  Nicolas A. PAPANICOLAOU  Mario G. ANCONA  James G. CHAMPLAIN  Yeong-Chang CHOU  Michael D. LANGE  Jeffrey M. YANG  Robert BASS  Doewon PARK  Ben V. SHANABROOK  
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pp.1058-1062  PAPER-Sb-based Devices
Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements
Jochen SIGMUND  Jean-Francois LAMPIN  Valentin IVANNIKOV  Cezary SYDLO  Michail FEIGINOV  Dimitris PAVLIDIS  Peter MEISSNER  Hans L. HARTNAGEL  
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pp.1063-1069  PAPER-Emerging Devices
Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
Hong-Quan ZHAO  Seiya KASAI  Tamotsu HASHIZUME  Nan-Jian WU  
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pp.1070-1075  PAPER-Emerging Devices
Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors
Michihiko SUHARA  Eri UEKI  Tsugunori OKUMURA  
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pp.1076-1083  INVITED PAPER
GaAs Industry in Europe-- Technologies, Trends and New Developments
Helmut JUNG  Herve BLANCK  Wolfgang BOSCH  Jim MAYOCK  
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pp.1084-1090  PAPER-GaAs- and InP-Based Devices
Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft
Norihide KASHIO  Kenji KURISHIMA  Yoshino K. FUKAI  Shoji YAMAHATA  
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pp.1091-1097  PAPER-GaAs- and InP-Based Devices
Large Signal Evaluation of Nonlinear HBT Model
Iltcho ANGELOV  Akira INOUE  Shinsuke WATANABE  
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pp.1098-1103  PAPER-GaAs- and InP-Based Devices
High-Performance 76-GHz Planar Gunn VCO
Yoshimichi FUKASAWA  Kiyoshi KAWAGUCHI  Takashi YOSHIDA  Takahiro SUGIYAMA  Atsushi NAKAGAWA  
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pp.1104-1108  PAPER-GaAs- and InP-Based Devices
1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
Fumio HARIMA  Yasunori BITO  Hidemasa TAKAHASHI  Naotaka IWATA  
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Joint Special Section on Opto-electronics and Communications toward NGN and beyond

pp.1109-1109  FOREWORD
FOREWORD
Yuzo YOSHIKUNI  
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pp.1110-1116  PAPER
Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect
Yu SHIMIZU  Sou KAWABE  Hiroya IWASAKI  Takayuki SUGIO  Kazuhiko SHIMOMURA  
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pp.1117-1120  PAPER
Polymeric Waveguide Optical Switch Using Rotary Drive Mechanism
Toshitsugu UESUGI  Shiho ZAIZEN  Atsushi SUGITATSU  Tatsuo HATTA  
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pp.1121-1128  PAPER
All-Optical Phase Multiplexing from π/2-Shifted DPSK-WDM to DQPSK Using Four-Wave Mixing in Highly-Nonlinear Fiber
Guo-Wei LU  Kazi Sarwar ABEDIN  Tetsuya MIYAZAKI  
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pp.1129-1135  PAPER
Dispersion and Splice Characteristics of Bend-Insensitive Fibers with Trench-Index Profile Compliant with G.652
Shoichiro MATSUO  Tomohiro NUNOME  Kuniharu HIMENO  Haruhiko TSUCHIYA  
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pp.1136-1141  PAPER
Designs and Fabrications of Photonic Crystal Fiber Couplers with Air Hole Controlled Tapers
Hirohisa YOKOTA  Hiroki KAWASHIRI  Yutaka SASAKI  
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Regular Section

pp.1142-1150  PAPER-Semiconductor Materials and Devices
Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress
Kenta YAMADA  Takashi SATO  Shuhei AMAKAWA  Noriaki NAKAYAMA  Kazuya MASU  Shigetaka KUMASHIRO  
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pp.1151-1157  PAPER-Integrated Electronics
Design of a High-Precision DDS-Based Configurable Clock Generator
Hsin-Chuan CHEN  
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pp.1158-1166  PAPER-Electronic Displays
Excitation Phenomena of Plasma Display Panel
Teruo KURAI  
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pp.1167-1170  LETTER-Electromagnetic Theory
RCS Prediction Method from One-Dimensional Intensity Data in Near-Field
Yoshio INASAWA  Hiroaki MIYASHITA  Yoshihiko KONISHI  
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pp.1171-1174  LETTER-Integrated Electronics
A Partial Access Mechanism on a Register for Low-Cost Embedded Multimedia ASIP
Ha-young JEONG  Min-young CHO  Won HUR  Yong-surk LEE  
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