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Online ISSN : 1745-1353

Volume E89-C No.7 (Publication Date:2006/07/01)

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Special Section on Heterostructure Microelectronics with TWHM2005

pp.873-873 FOREWORD FOREWORD Takatomo ENOKI
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pp.874-882 PAPER-INVITED Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress Hideki HASEGAWA Seiya KASAI Taketomo SATO Tamotsu HASHIZUME
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pp.883-890 PAPER-INVITED InP DHBT Integrated Circuits for Fiber-Optic High-Speed Applications Jean GODIN Agnieszka KONCZYKOWSKA Muriel RIET Jacques MOULU Philippe BERDAGUER Filipe JORGE
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pp.891-897 PAPER-INVITED Novel Devices for (Sub)millimeter-Wave Space Applications Jan V. GRAHN Piotr STARSKI Jan STAKE T. Sergey CHEREDNICHENKO
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pp.898-905 PAPER-INVITED RF MEMS--Enabling Technology for Millimeter-Waves Youngwoo KWON Sanghyo LEE
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pp.906-912 PAPER-INVITED Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy Andrea CORRION Christiane POBLENZ Patrick WALTEREIT Tomas PALACIOS Siddharth RAJAN Umesh K. MISHRA Jim S. SPECK
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pp.913-920 PAPER-INVITED Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs Arvydas MATULIONIS
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pp.921-925 PAPER-INVITED Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si_0.7Ge_0.3 Virtual Substrates Mathieu STOFFEL Jing ZHANG Oliver G. SCHMIDT
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pp.926-930 PAPER-INVITED Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors Wojciech KNAP Jerzy USAKOWSKI Frederic TEPPE Nina DYAKONOVA Abdelouahad El FATIMY
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pp.931-936 PAPER-High-Speed HBTs and ICs InP DHBT Based IC Technology for over 80 Gbit/s Data Communications Rachid DRIAD Robert E. MAKON Karl SCHNEIDER Ulrich NOWOTNY Rolf AIDAM Rudiger QUAY Michael SCHLECHTWEG Michael MIKULLA Gunter WEIMANN
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pp.937-942 PAPER-High-Speed HBTs and ICs Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies Masato SEKI Ryo ISHIKAWA Kazuhiko HONJO
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pp.943-948 PAPER-High-Speed HBTs and ICs Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA
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pp.949-953 PAPER-Millimeter-Wave Devices Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU
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pp.954-958 PAPER-Millimeter-Wave Devices W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs Koji INAFUNE Eiichi SANO Hideaki MATSUZAKI Toshihiko KOSUGI Takatomo ENOKI
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pp.959-964 PAPER-Millimeter-Wave Devices HEMT CCD Matched Filter for Spread Spectrum Communication Takahiro SUGIYAMA Eiji NISHIMORI Satoru ONO Kiyoshi KAWAGUCHI Atsushi NAKAGAWA
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pp.965-971 PAPER-THz Devices Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes Masahiro ASADA Naoyuki ORIHASHI Safumi SUZUKI
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pp.972-978 PAPER-THz Devices Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer Yasuyuki MIYAMOTO Ryo NAKAGAWA Issei KASHIMA Masashi ISHIDA Nobuya MACHIDA Kazuhito FURUYA
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pp.979-984 PAPER-THz Devices A Design of Continuous-Time Delta-Sigma Modulators Using a Fully-Differential Resonant-Tunneling Comparator Keisuke EGUCHI Masaru CHIBASHI Shinpei NAKAGAWA Mitsuhiro TANIHATA Takao WAHO
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pp.985-992 PAPER-THz Devices Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer Mitsuhiro HANABE Takuya NISHIMURA Masaki MIYAMOTO Taiichi OTSUJI Eiichi SANO
	Summary \| Full Text:PDF (635.9KB)

pp.993-998 PAPER-THz Devices Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors Yahya Moubarak MEZIANI Jerzy USAKOWSKI Nina DYAKONOVA Wojciech KNAP Dalius SELIUTA Edmundas SIRMULIS Jan DEVENSON Gintaras VALUSIS Frederic BOEUF Thomas SKOTNICKI
	Summary \| Full Text:PDF (521KB)

pp.999-1004 PAPER-THz Devices Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation Youhei OOKAWA Shigeru KISHIMOTO Koichi MAEZAWA Takashi MIZUTANI
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pp.1005-1011 PAPER-THz Devices Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer Takuya NISHIMURA Mitsuhiro HANABE Masaki MIYAMOTO Taiichi OTSUJI Eiichi SANO
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pp.1012-1019 PAPER-THz Devices Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect Victor RYZHII Akira SATOU Michael S. SHUR
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pp.1020-1024 PAPER-THz Devices Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities Hideki ONO Satoshi TANIGUCHI Toshi-kazu SUZUKI
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pp.1025-1030 PAPER-GaN-Based Devices Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage Yong CAI Yugang ZHOU Kei May LAU Kevin J. CHEN
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pp.1031-1036 PAPER-GaN-Based Devices A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET Daigo KIKUTA Jin-Ping AO Junya MATSUDA Yasuo OHNO
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pp.1037-1041 PAPER-GaN-Based Devices Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications Oktay YILMAZOGLU Kabula MUTAMBA Dimitris PAVLIDIS Marie Rose MBARGA
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pp.1042-1046 PAPER-GaN-Based Devices Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage Masaya OKADA Ryohei TAKAKI Daigo KIKUTA Jin-Ping AO Yasuo OHNO
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pp.1047-1051 PAPER-GaN-Based Devices Improvement of CO Sensitivity in GaN-Based Gas Sensors Eunjung CHO Dimitris PAVLIDIS Guangyuan ZHAO Seth M. HUBBARD Johannes SCHWANK
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pp.1052-1056 PAPER-GaN-Based Devices Influence of NH₃-Plasma Pretreatment before Si₃N₄ Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs Shinichi HOSHI Toshiharu MARUI Masanori ITOH Yoshiaki SANO Shouhei SEKI
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pp.1057-1063 PAPER-GaN-Based Devices Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation Masayuki ABE Hiroyuki NAGASAWA Stefan POTTHAST Jara FERNANDEZ Jorg SCHORMANN Donat Josef AS Klaus LISCHKA
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pp.1064-1067 LETTER-GaN-Based Devices Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT Yoshikazu HIROSE Akira HONSHIO Takeshi KAWASHIMA Motoaki IWAYA Satoshi KAMIYAMA Michinobu TSUDA Hiroshi AMANO Isamu AKASAKI
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Regular Section

pp.1068-1079 PAPER-Lasers, Quantum Electronics Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE Xueliang SONG Naoki FUTAKUCHI Daisuke MIYASHITA Foo Cheong YIT Yoshiaki NAKANO
	Summary \| Full Text:PDF (2.5MB)

pp.1080-1088 PAPER-Microwaves, Millimeter-Waves A Single-Layer Hollow-Waveguide 8-Way Butler Matrix Shin-ichi YAMAMOTO Jiro HIROKAWA Makoto ANDO
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pp.1089-1096 PAPER-Electronic Circuits A Very Low Power 10 MHz CMOS Continuous-Time Bandpass Filter with On-Chip Automatic Tuning Gholamreza Zareh FATIN Mohammad GHADAMI
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pp.1097-1105 PAPER-Integrated Electronics Fast and Accurate Power Bus Designer for Multi-Layers High-Speed Digital Boards Yong-Ju KIM Won-Young JUNG Jae-Kyung WEE
	Summary \| Full Text:PDF (1.7MB)

pp.1106-1107 LETTER-Lasers, Quantum Electronics Self-Starting Pulse Generation from Cooled Erbium-Doped Fiber Ring Laser Kazuhiko SUMIMURA Hidetsugu YOSHIDA Hisanori FUJITA Masahiro NAKATSUKA Minoru YOSHIDA
	Summary \| Full Text:PDF (149.1KB)

pp.1108-1111 LETTER-Lasers, Quantum Electronics Switching Characteristics of All-Optical Wavelength-Selective Switch Using Waveguide-Type Raman Amplifiers and 3-dB Couplers Hiroki KISHIKAWA Nobuo GOTO
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pp.1112-1114 LETTER-Lasers, Quantum Electronics Self-Controlled Short Pulse Generator from All-Fiber Coupled Fabry-Perot Cavity Kazuhiko SUMIMURA Hidetsugu YOSHIDA Hisanori FUJITA Masahiro NAKATSUKA Hisashi SAWADA
	Summary \| Full Text:PDF (144.1KB)

pp.1115-1117 LETTER-Lasers, Quantum Electronics 763-nm Laser Light Source for Oxygen Monitoring Using Second Harmonic Generation in Direct-Bonded Quasi-Phase-Matched LiNbO₃ Ridge Waveguide Osamu TADANAGA Masaki ASOBE Yoshiki NISHIDA Hiroshi MIYAZAWA Kaoru YOSHINO Hiroyuki SUZUKI
	Summary \| Full Text:PDF (321.9KB)