IEICE TRANSACTIONS on Electronics

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Online ISSN : 1745-1353
Volume E89-C No.5  (Publication Date:2006/05/01)
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Special Section on Fundamental and Application of Advanced Semiconductor Devices

pp.577-577  FOREWORD
FOREWORD
Fumio HORIGUCHI 
Summary |  Full Text:PDF (52.3KB)

pp.578-584  PAPER-Si Devices and Processes
Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate
Kuk-Hwan KIM  Hyunjin LEE  Yang-Kyu CHOI 
Summary |  Full Text:PDF (984.8KB)

pp.585-590  PAPER-Si Devices and Processes
A True 10-bit Data Driver LSI for HDTV TFT-LCDs
Jin-Ho KIM  Oh-Kyong KWON  Byong-Deok CHOI 
Summary |  Full Text:PDF (1MB)

pp.591-595  PAPER-Si Devices and Processes
High Performance Power MOSFETs by Wing-Cell Structure Design
Feng-Tso CHIEN  Chien-Nan LIAO  Chi-Ling WANG  Hsien-Chin CHIU 
Summary |  Full Text:PDF (1.3MB)

pp.596-601  PAPER-Si Devices and Processes
Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films
Shun-ichiro OHMI  Tomoki KUROSE  Masaki SATOH 
Summary |  Full Text:PDF (845KB)

pp.602-607  PAPER-Si Devices and Processes
3D Inspection on Wafer Solder Bumps Using Binary Grating Projection in Integrated Circuit Manufacturing
Shu YUAN  Dongping TIAN  Yanxing ZENG 
Summary |  Full Text:PDF (695.1KB)

pp.608-615  PAPER-Compound Semiconductor Devices
High Power GaN-HEMT for Wireless Base Station Applications
Toshihide KIKKAWA  Kazukiyo JOSHIN 
Summary |  Full Text:PDF (1.6MB)

pp.616-621  PAPER-Compound Semiconductor Devices
Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor
Seok Gyu CHOI  Jung Hun OH  Bok Hyung LEE  Byeong Ok LIM  Sung Woon MOON  Dong Hoon SHIN  Sam Dong KIM  Jin Koo RHEE 
Summary |  Full Text:PDF (1.5MB)  | Errata(Uploaded on July 1,2006)

Regular Section

pp.622-629  PAPER-Microwaves, Millimeter-Waves
Multi-Stage, Multi-Way Microstrip Power Dividers with Broadband Properties
Mitsuyoshi KISHIHARA  Isao OHTA  Kuniyoshi YAMANE 
Summary |  Full Text:PDF (684.2KB)

pp.630-635  PAPER-Electronic Circuits
A 10b 100 MS/s 1.4 mm2 56 mW 0.18 µm CMOS A/D Converter with 3-D Fully Symmetrical Capacitors
Byoung-Han MIN  Young-Jae CHO  Hee-Sung CHAE  Hee-Won PARK  Seung-Hoon LEE 
Summary |  Full Text:PDF (1.3MB)

pp.636-641  PAPER-Electronic Circuits
An Embedded 8b 240 MS/s 1.36 mm2 104 mW 0.18 µm CMOS ADC for DVDs with Dual-Mode Inputs
Young-Jae CHO  Se-Won KIM  Kyung-Hoon LEE  Hee-Cheol CHOI  Young-Lok KIM  Seung-Hoon LEE 
Summary |  Full Text:PDF (1MB)

pp.642-644  LETTER-Electromagnetic Theory
Diffraction Amplitudes from Periodic Neumann Surface: Low Grazing Limit of Incidence
Junichi NAKAYAMA  Kazuhiro HATTORI  Yasuhiko TAMURA 
Summary |  Full Text:PDF (83.9KB)

pp.645-648  LETTER-Electromagnetic Theory
Implementation of the Perfect Matched Layer to the CIP Method
Yoshiaki ANDO  Masashi HAYAKAWA 
Summary |  Full Text:PDF (198KB)

pp.649-652  LETTER-Electronic Circuits
A Bootstrapped Switch for nMOS Reversible Energy Recovery Logic for Low-Voltage Applications
Seokkee KIM  Soo-Ik CHAE 
Summary |  Full Text:PDF (580.7KB)

pp.653-657  LETTER-Integrated Electronics
Instruction Based Synthesizable Testbench Architecture
Ho-Seok CHOI  Hae-Wook CHOI  Sin-Chong PARK 
Summary |  Full Text:PDF (959.1KB)

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