IEICE TRANSACTIONS on Electronics

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Volume E77-C No.3  (Publication Date:1994/03/25)
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Special Issue on Quarter Micron Si Device and Process Technologies

pp.341-341  FOREWORD
FOREWORD
Eisuke ARAI  
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pp.342-349  INVITED PAPER
Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding
Takao ABE  Yasuyuki NAKAZATO  
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pp.350-354  PAPER-Device Technology
LATID (Large-Angle-Tilt Implanted Drain) FETs with Buried n- Profile for Deep-Submicron ULSIs
Junji HIRASE  Takashi HORI  Yoshinori ODAKE  
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pp.355-361  PAPER-Device Technology
A 0.25-µm BiCMOS Technology Using SOR X-Ray Lithography
Shinsuke KONAKA  Hakaru KYURAGI  Toshio KOBAYASHI  Kimiyoshi DEGUCHI  Eiichi YAMAMOTO  Shigehisa OHKI  Yousuke YAMAMOTO  
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pp.362-366  PAPER-Device Technology
Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD)
Yukihiro KIYOTA  Tohru NAKAMURA  Taroh INADA  
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pp.367-372  PAPER-Device Technology
Hot Carrier Evaluation of TFT by Emission Microscopy
Junko KOMORI  Jun-ichi MITSUHASHI  Shigenobu MAEDA  
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pp.373-378  PAPER-Device Technology
Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation--
Mitsuru YAMAJI  Kenji TANIGUSHI  Chihiro HAMAGUCHI  Kazuo SUKEGAWA  Seiichiro KAWAMURA  
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pp.379-384  PAPER-Device Technology
Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs
Satoshi KAMIYAMA  Hiroshi SUZUKI  Pierre-Yves LESAICHERRE  Akihiko ISHITANI  
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pp.385-391  PAPER-Device Technology
(Ba0.75Sr0.25)TiO3 Films for 256 Mbit DRAM
Tsuyoshi HORIKAWA  Noboru MIKAMI  Hiromi ITO  Yoshikazu OHNO  Tetsuro MAKITA  Kazunao SATO  
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pp.392-398  PAPER-Device Technology
Application of Ferroelectric Thin Films to Si Devices
Koji ARITA  Eiji FUJII  Yasuhiro SHIMADA  Yasuhiro UEMOTO  Masamichi AZUMA  Shinichiro HAYASHI  Toru NASU  Atsuo INOUE  Akihiro MATSUDA  Yoshihisa NAGANO  Shin-ich KATSU  Tatsuo OTSUKI  Gota KANO  Larry D. McMILLAN  Carlos A. Paz de ARAUJO  
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pp.399-405  PAPER-Device Technology
Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method
Yoshikazu OHNO  Hiroshi KIMURA  Ken-ichiro SONODA  Tadashi NISHIMURA  Shin-ichi SATOH  Hirokazu SAYAMA  Shigenori HARA  Mikio TAKAI  Hirokazu MIYOSHI  
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pp.406-415  PAPER-Device Technology
Design Rule Relaxation Approach for High-Density DRAMs
Takanori SAEKI  Eiichiro KAKEHASHI  Hidemitu MORI  Hiroki KOGA  Kenji NODA  Mamoru FUJITA  Hiroshi SUGAWARA  Kyoichi NAGATA  Shozo NISHIMOTO  Tatsunori MUROTANI  
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pp.416-424  PAPER-Process Technology
New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns
Masaru SASAGO  Takahiro MATSUO  Kazuhiro YAMASHITA  Masayuki ENDO  Kouji MATSUOKA  Taichi KOIZUMI  Akiko KATSUYAMA  Noboru NOMURA  
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pp.425-431  PAPER-Process Technology
Optimization of Optical Parameters in KrF Excimer Laser Lithography for Quarter-Micron Lines Pattern
Keiichiro TOUNAI  Kunihiko KASAMA  
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pp.432-437  PAPER-Process Technology
High Performance Lithography with Advanced Modified Illumination
Ho-Young KANG  Cheol-Hong KIM  Joong-Hyun LEE  Woo-Sung HAN  Young-Bum KOH  
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pp.438-444  PAPER-Process Technology
Enhancement of Defocus Characteristics with Intermediate Phase Interference in Phase Shift Method
Hiroshi OHTSUKA  Toshio ONODERA  Kazuyuki KUWAHARA  Takashi TAGUCHI  
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pp.445-452  PAPER-Process Technology
High Speed Electron Beam Cell Projection Exposure System
Yoshihiko OKAMOTO  Norio SAITOU  Haruo YODA  Yoshio SAKITANI  
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pp.453-458  PAPER-Process Technology
Evaluation of Plasma Damage to Gate Oxide
Yukiharu URAOKA  Koji ERIGUCHI  Tokuhiko TAMAKI  Kazuhiko TSUJI  
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pp.459-463  PAPER-Process Technology
Elimination of Negative Charge-Up during High Current Ion Implantation
Kazunobu MAMENO  Atsuhiro NISHIDA  Hideharu NAGASAWA  Hideaki FUJIWARA  Koji SUZUKI  Kiyoshi YONEDA  
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pp.464-472  PAPER-Process Technology
Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors
Makoto TAKIYAMA  Susumu OHTSUKA  Tadashi SAKON  Masaharu TACHIMORI  
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pp.473-479  PAPER-Process Technology
Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation
Kimiaki SHIMOKAWA  Takashi USAMI  Masaki YOSHIMARU  
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pp.480-485  PAPER-Process Technology
Ti Salicide Process for Subquarter-Micron CMOS Devices
Ken-ichi GOTO  Tatsuya YAMAZAKI  Yasuo NARA  Tetsu FUKANO  Toshihiro SUGII  Yoshihiro ARIMOTO  Takashi ITO  
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pp.486-491  PAPER-Process Technology
Identification of the Particle Source in LSI Manufacturing Process Equipment
Yoshimasa TAKII  Nobuo AOI  Yuichi HIROFUJI  
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pp.492-497  PAPER-Process Technology
Removal of Particles on Si Wafers in SC-1 Solution
Hiroyuki KAWAHARA  Kenji YONEDA  Izumi MUROZONO  Yoshihiro TODOKORO  
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Regular Section

pp.498-509  PAPER-Electronic Circuits
Stability of an Active Two Port Network in terms of S Parameters
Yoshihiro MIWA  
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pp.510-514  PAPER-Opto-Electronics
Modified Numerical Technique for Beam Propagation Method Based on the Galerkin's Technique
Guosheng PU  Tetsuya MIZUMOTO  Yoshiyuki NAITO  
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pp.515-518  LETTER-Integrated Electronics
Temperature Adaptive Voltage Reference Network for Realizing a Transconductance with Low Temperature Sensitivity
Rabin RAUT  
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