IEICE TRANSACTIONS on Electronics

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Volume E77-C No.2  (Publication Date:1994/02/25)
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Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)

pp.91-91  FOREWORD
FOREWORD
Kunihiro ASADA  
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pp.92-97  PAPER-Process Simulation
Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations
Ernst STRASSER  Gerhard SCHROM  Karl WIMMER  Siegfried SELBERHERR  
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pp.98-105  PAPER-Process Simulation
Material Representations and Algorithms for Nanometer Lithography Simulation
Edward W. SCHECKLER  Taro OGAWA  Shoji SHUKURI  Eiji TAKEDA  
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pp.106-111  PAPER-Process Simulation
Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation
Hisako SATO  Katsumi TSUNENO  Hiroo MASUDA  
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pp.112-117  PAPER-Process Simulation
Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon
Masami HANE  Shinya HASEGAWA  
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pp.118-123  PAPER-Process Simulation
Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree
Hannes STIPPEL  Siegfried SELBERHERR  
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pp.124-128  PAPER-Process Simulation
Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation
Satoshi MATSUDA  Nobuyuki ITOH  Chihiro YOSHINO  Yoshiroh TSUBOI  Yasuhiro KATSUMATA  Hiroshi IWAI  
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pp.129-133  PAPER-Process Simulation
Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS
Kazuhiko KAI  Shigeki KURODA  Kenji NISHI  
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pp.134-138  PAPER-Device Modeling
A non-Local Formulation of Impact Ionization for Silicon
Paul G. SCROBOHACI  Ting-wei TANG  
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pp.139-147  PAPER-Device Modeling
A Unified Model for the Simulation of Small-Geometry Devices
Anna PIERANTONI  Paolo CIAMPOLINI  Andrea LIUZZO  Giorgio BACCARANI  
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pp.148-154  PAPER-Device Modeling
On the Origin of Tunneling Currents in Scaled Silicon Devices
Andreas SCHENK  Ulrich KRUMBEIN  Stephan MÜLLER  Hartmut DETTMER  Wolfgang FICHTNER  
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pp.155-160  PAPER-Device Modeling
Theoretical Analysis of Transconductance Enhancement Caused by Electron-Concentration-Dependent Screening in Heavily Doped Systems
Shirun HO  Aya MORIYOSHI  Isao OHBU  Osamu KAGAYA  Hiroshi MIZUTA  Ken YAMAGUCHI  
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pp.161-165  PAPER-Device Simulation
Modeling and Simulation on Degradation of Submicron NMOSFET Current Drive due to Velocity-Saturation Effects
Katsumi TSUNENO  Hisako SATO  Hiroo MASUDA  
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pp.166-173  PAPER-Device Simulation
An Integrated Efficient Method for Deep-Submicron EPROM/Flash Device Simulation Using Energy Transport Model
Jack Zezhong PENG  Steve LONGCOR  Jeffrey FREY  
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pp.174-178  PAPER-Device Simulation
Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer
Yoshiroh TSUBOI  Claudio FIFGNA  Enrico SANGIORGI  Bruno RICCÒ  Tetsunori WADA  Yasuhiro KATSUMATA  Hiroshi IWAI  
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pp.179-186  PAPER-Device Simulation
Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)
Hermann BRAND  Siegfried SELBERHERR  
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pp.187-193  PAPER-Device Simulation
Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs
Shirun HO  Masaki OOHIRA  Osamu KAGAYA  Aya MORIYOSHI  Hiroshi MIZUTA  Ken YAMAGUCHI  
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pp.194-199  PAPER-Coupled Device & Circuit Modeling
New Insights in Optimizing CMOS Inverter Circuits with Respect to Hot-Carrier Degradation
Peter M. LEE  
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pp.200-205  PAPER-Coupled Device & Circuit Modeling
Influence of Energy Transport Related Effects on NPN BJT Device Performance and ECL Gate Delay Analysed by 2D Parallel Mixed Level Device/Circuit Simulation
Matthias STECHER  Bernd MEINERZHAGEN  Ingo BORK  Joachim M. J. KRÜCKEN  Peter MAAS  Walter L. ENGL  
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pp.206-213  PAPER-Coupled Device & Circuit Modeling
MUSIC: A Novel Multilevel Simulator for Integrated Circuits
Zsolt Miklós KOVÁCS-VAJNA  Arrigo BENEDETTI  Sergio GRAFFI  Guido MASETTI  
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pp.214-219  PAPER-Numerics
Comparison between a posteriori Error Indicators for Adaptive Mesh Generation in Semiconductor Device Simulation
Katsuhiko TANAKA  Paolo CIAMPOLINI  Anna PIERANTONI  Giorgio BACCARANI  
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pp.220-226  PAPER-Numerics
A System for 3D Simulation of Complex Si and Heterostructure Devices
Paolo CONTI  Masaaki TOMIZAWA  Akira YOSHII  
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pp.227-235  PAPER-Numerics
Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations
N. R. ALURU  Kincho H. LAW  Peter M. PINSKY  Arthur RAEFSKY  Ronald J. G. GOOSSENS  Robert W. DUTTON  
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pp.236-247  PAPER-Numerics
Efficient Transient Device Simulation with AWE Macromodels and Domain Decomposition
Howard C. READ  Shigetaka KUMASHIRO  Andrzej STROJWAS  
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pp.248-254  PAPER-Numerics
Algorithms for Drift-Diffusion Device Simulation Using Massively Parallel Processors
Eric TOMACRUZ  Jagesh V. SANGHAVI  Alberto SANGIOVANNI-VINCENTELLI  
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Regular Section

pp.255-262  PAPER-Integrated Electronics
Tantalum Dry-Etching Characteristics for X-Ray Mask Fabrication
Akira OZAWA  Shigehisa OHKI  Masatoshi ODA  Hideo YOSHIHARA  
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pp.263-272  PAPER-Integrated Electronics
An Automated On-Chip Direct Wiring Modification for High Performance LSIs
Akio ANZAI  Mikinori KAWAJI  Takahiko TAKAHASHI  
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pp.273-279  PAPER-Integrated Electronics
Estimation of Yield Suppression for 1.5 V-1 Gbit DRAMs Caused by Threshold Voltage Variation of MOSFET due to Microscopic Fluctuation in Dopant Distributions
Shigeyoshi WATANABE  Takaaki MINAMI  
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pp.280-286  PAPER-Electronic Circuits
2 MHz Power Converter with Piezoelectric Ceramic Transformer
Toshiyuki ZAITSU  Takeshi INOUE  Osamu OHNISHI  Yasuhiro SASAKI  
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pp.287-297  PAPER-Semiconductor Materials and Devices
Bandgap Narrowing and Incomplete Ionization Calculations for the Temperature Range from 40 K up to 400 K
Yevgeny V. MAMONTOV  Magnus WILLANDER  
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pp.298-302  PAPER-Opto-Electronics
Numerical Analysis of a Symmetric Nonlinear Directional Coupler
Hiroshi MAEDA  Kiyotoshi YASUMOTO  
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pp.303-311  PAPER-Opto-Electronics
Numerical Synthesis of Multilayer Cladding Optical Waveguides by a Random Sampling Method
Shuichiro ASAKAWA  Yasuo KOKUBUN  
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pp.312-318  PAPER-Electromagnetic Theory
A Study on Magnetostatic Surface Wave Excitation by Microstrip
Tatsuya OMORI  Ken'ichiro YASHIRO  Sumio OHKAWA  
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pp.319-321  LETTER-Opto-Electronics
Effects of Trench Location on the Attenuation Constant in Bent Step-Index Optical Waveguides
Junji YAMAUCHI  Takashi ANDO  Morihiko IKEGAYA  Hisamatsu NAKANO  
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pp.322-325  LETTER-Electromagnetic Theory
Hybrid Modes of Goubau Line
Ken-ichi SAKINA  Jiro CHIBA  
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