IEICE TRANSACTIONS on Electronics

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Volume E76-C No.9  (Publication Date:1993/09/25)
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Special Issue on Heterostructure Electron Devices

pp.1361-1361  FOREWORD
FOREWORD
Hiroyuki SAKAKI  Tadao ISHIBASHI  
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pp.1362-1366  PAPER
Fundamental Analysis on Quantum Interconnections in a 2DEG System
Yujiro NARUSE  
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pp.1367-1372  PAPER
Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications
Norio GOTO  Nobuyuki HAYAMA  Hideki TAKAHASHI  Kazuhiko HONJO  
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pp.1373-1378  PAPER
0.15 µm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value
Hidetoshi MATSUMOTO  Yasunari UMEMOTO  Yoshihisa OHISHI  Mitsuharu TAKAHAMA  Kenji HIRUMA  Hiroto ODA  Masaru MIYAZAKI  Yoshinori IMAMURA  
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pp.1379-1383  PAPER
Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation
Yasunobu SAITO  Fumio SASAKI  Hisao KAWASAKI  Hiroshi ISHIMURA  Hirokuni TOKUDA  Motoharu OHTOMO  
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pp.1384-1391  PAPER
Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition
Kenji FUNATO  Kenichi TAIRA  Fumihiko NAKAMURA  Hiroji KAWAI  
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pp.1392-1401  PAPER
IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs
Yutaka MATSUOKA  Shoji YAMAHATA  Satoshi YAMAGUCHI  Koichi MURATA  Eiichi SANO  Tadao ISHIBASHI  
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pp.1402-1411  PAPER
Novel Channel Structures for High Frequency InP-Based HTEFs
Takatomo ENOKI  Kunihiro ARAI  Tatsushi AKAZAKI  Yasunobu ISHII  
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Regular Section

pp.1412-1419  PAPER-Electromagnetic Theory
Equivalent Edge Currents for Modified Edge Representation of Flat Plates: Fringe Wave Components
Tsutomu MURASAKI  Masahide SATO  Yoshio INASAWA  Makoto ANDO  
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pp.1420-1422  LETTER-Semiconductor Materials and Devices
Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes
Makoto FUKUSHIMA  
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pp.1423-1424  LETTER-Opto-Electronics
First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
Toshihiko BABA  Yukiaki YOGO  Katsumasa SUZUKI  Fimio KOYAMA  Kenichi IGA  
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