C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)

Archive Index

Online ISSN : 1881-0217
Volume J89-C No.9  (Publication Date:2006/09/01)
Previous | 
Next
Special Issue on High-Reliability Technology of Compound Semiconductor Devices
pp.559-567  PAPER
Reliability of 0.18 µm Gate GaAs-MESFETs Fabricated by i-Line Lithography Process
Yasuhiro TOSAKA  Masataka WATANABE  Daiji FUKUSHI  Hiroshi YANO  Shigeru NAKAJIMA 
Summary |  Full Text(in Japanese):PDF (1.2MB)
pp.568-575  PAPER
Degradation Mechanism of AlGaAs/InGaAs PHEMT
Takayuki HISAKA  Yoichi NOGAMI  Hajime SASAKI  Naohito YOSHIDA  Kazuo HAYASHI 
Summary |  Full Text(in Japanese):PDF (935.7KB)
pp.576-582  PAPER
Degradation Mechanism of P-HEMTs Characteristics by Fluorine-Based Gas Plasma
Hiroyuki UCHIYAMA  Takafumi TANIGUCHI  Takeshi KIKAWA 
Summary |  Full Text(in Japanese):PDF (284.1KB)
pp.583-588  PAPER
Improvement in Reliability of InP-Based HEMTs by Suppressing Impact Ionization
Naoki HARA  Naoya OKAMOTO  Kenji IMANISHI  Tsuyoshi TAKAHASHI  Kozo MAKIYAMA 
Summary |  Full Text(in Japanese):PDF (458.3KB)
pp.589-596  PAPER
Highly Reliable InP-Based HBTs with a Ledge Structure Operating at High Current Density
Yoshino K. FUKAI  Kenji KURISHIMA  Minoru IDA  Shoji YAMAHATA  Takatomo ENOKI 
Summary |  Full Text(in Japanese):PDF (777.1KB)
pp.597-603  PAPER
Enhanced Reliability of Thermal Oxides Grown on 4H-SiC Substrates
Junji SENZAKI  Kenji FUKUDA 
Summary |  Full Text(in Japanese):PDF (389.1KB)
Previous | 
Next
go to Page Top