Yoshinori SAKAMOTO

A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology
Hideaki KURATA  Satoshi NODA  Yoshitaka SASAGO  Kazuo OTSUGA  Tsuyoshi ARIGANE  Tetsufumi KAWAMURA  Takashi KOBAYASHI  Hitoshi KUME  Kazuki HOMMA  Teruhiko ITO  Yoshinori SAKAMOTO  Masahiro SHIMIZU  Yoshinori IKEDA  Osamu TSUCHIYA  Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/11/01
Vol. E90-C  No. 11  pp. 2146-2156
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
flash memory,  multilevel,  inversion-layer-bit-line,  AG-AND, 
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